© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 3000 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C 30 A
IC110 TC = 110°C 12 A
ICM TC = 25°C, 1ms 100 A
SSOA VGE = 15V, TVJ = 125°C, RG = 30Ω ICM = 98 A
(RBSOA) Clamped Inductive Load 1500 V
PCTC = 25°C 160 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 seconds 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
DS100120A(10/12)
IXBT12N300
IXBH12N300
VCES = 3000V
IC110 = 12A
VCE(sat) ≤≤
≤≤
≤ 3.2V
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
Features
zHigh Blocking Voltage
zInternational Standard Packages
zAnti-Parallel Diode
zLow Conduction Losses
Advantages
zLow Gate Drive Requirement
zHigh Power Density
Applications:
zSwitched-Mode and Resonant-Mode
Power Supplies
zUninterruptible Power Supplies (UPS)
zLaser Generators
zCapacitor Discharge Circuits
zAC Switches
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 3000 V
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = 0.8 • VCES, VGE = 0V 25 μA
TJ = 125°C 1 mA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 12A, VGE = 15V, Note 1 2.8 3.2 V
TJ = 125°C 3.5 V
G = Gate C = Collector
E = Emiiter Tab = Collector
TO-247 (IXBH)
G
EC (Tab)
C
TO-268 (IXBT)
E
G
C (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT12N300
IXBH12N300
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfS IC = 12A, VCE = 10V, Note 1 6.5 10.8 S
Cies 1290 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 56 pF
Cres 19 pF
Qg 62 nC
Qge IC = 12A, VGE = 15V, VCE = 1000V 13 nC
Qgc 8.5 nC
td(on) 64 ns
tr 140 ns
td(off) 180 ns
tf 540 ns
td(on) 65 ns
tr 395 ns
td(off) 175 ns
tf 530 ns
RthJC 0.78 °C/W
RthCS TO-247 0.21 °C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times, TJ = 125°C
IC = 12A, VGE = 15V
VCE = 1250V, RG = 10Ω
Resistive Switching Times, TJ = 25°C
IC = 12A, VGE = 15V
VCE = 1250V, RG = 10Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VF IF = 12A, VGE = 0V 2.1 V
trr 1.4 μs
IRM 21 A
IF = 6A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
TO-247 Outline
Terminals: 1 - Gate 2 - Collector
3 - Emitter
TO-268 Outline
Terminals: 1 - Gate 2,4 - Collector
3 - Emitter
e
∅ P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2012 IXYS CORPORATION, All Rights Reserved
IXBT12N300
IXBH12N300
Fi g . 1. Ou t p u t C h ar ac ter i sti cs @ T
J
= 25ºC
0
4
8
12
16
20
24
0 0.5 1 1.5 2 2.5 3 3.5 4
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fi g . 2. Exten d ed Ou tp u t C h ar acte r i sti cs @ T
J
= 25ºC
0
40
80
120
160
200
240
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 25V
10V
15V
20V
5V
Fi g . 3. Outpu t C h ar acter i sti cs @ T
J
= 125ºC
0
4
8
12
16
20
24
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fig. 4. Dependence of V
CE(sat)
on
Jun cti o n Temperatu r e
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 24A
I
C
= 12A
I
C
= 6A
Fi g . 5. C o llecto r -to-Emi tter Vo l tag e vs.
Gate-to-Emi t ter Vo l tag e
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
5 7 9 1113151719212325
V
GE
- Volts
V
CE
- Volts
I
C
= 24A
T
J
= 25ºC
6A
12A
Fig. 6. Input Admittance
0
4
8
12
16
20
24
28
32
36
40
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT12N300
IXBH12N300
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35 40 45
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1kV
I
C
= 12A
I
G
= 10mA
Fi g . 11. R ever se-B i as Safe Oper ati n g Area
0
20
40
60
80
100
500 1000 1500 2000 2500 3000
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 30Ω
dv / dt < 10V / ns
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
Fi g . 12. Maximu m Tran si en t Th er mal I mp ed an ce
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
4
8
12
16
20
24
28
32
36
00.511.522.53
V
F
- Volts
I
F
- Amperes
T
J
= 125ºC
T
J
= 25ºC
© 2012 IXYS CORPORATION, All Rights Reserved
IXBT12N300
IXBH12N300
IXYS REF: B_12N300(4P)06-05-12
Fi g . 14 . R esi s ti ve Tu r n -o n R i se Time vs .
Collector Current
0
100
200
300
400
500
600
6 8 10 12 14 16 18 20 22 24
I
C
- Amperes
t
r
- Nanoseconds
RG
= 10Ω , VGE = 15V
VCE = 1250V
TJ = 125ºC
TJ = 25ºC
Fig . 15. R esisti ve Tu r n-o n Swi tchi n g Ti mes vs.
Gate R esi stance
250
300
350
400
450
500
550
600
650
700
750
10 20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
r
- Nanoseconds
50
60
70
80
90
100
110
120
130
140
150
t d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
TJ = 125ºC, VGE = 15V
VCE = 1250V
I C = 24A, 12A
Fi g. 16. R esi stive Tu r n-o ff Switchi n g Ti mes vs.
Jun ct i o n Temp er atu re
200
300
400
500
600
700
800
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
140
150
160
170
180
190
200
t d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
RG = 10Ω, VGE = 15V
VCE = 1250V
I C = 24A
I C = 12A
Fig . 17. R esi st i ve Turn -o ff Switch i n g Ti mes vs .
Collector Current
0
200
400
600
800
1000
1200
1400
6 8 10 12 14 16 18 20 22 24
I
C
- Amperes
t
f
- Nanoseconds
60
100
140
180
220
260
300
340
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
RG = 10Ω, VGE = 15V
VCE = 1250V
TJ = 125ºC, 25ºC
Fi g . 13 . R esi s ti ve Turn -o n R i se Time vs .
Junction Temp eratu re
0
100
200
300
400
500
600
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
RG
= 10Ω , VGE = 15V
VCE = 1250V
I C = 12A
I C = 24A
Fig . 18. R esi st i ve Turn -o ff Switch i n g Ti mes vs .
Gate Resistance
250
300
350
400
450
500
550
600
650
700
10 20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
700
800
900
t d
(
off
)
- Nanoseconds
t
f
t
d(off
)
- - - -
TJ = 125ºC, VGE = 15V
VCE = 1250V
I C = 24A
I C = 12A
