BUP 603D IGBT With Antiparallel Diode Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Including fast free-wheel diode Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code BUP 603D 600V 42A TO-218 AB Q67040-A4230-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values Unit 600 V 600 Gate-emitter voltage VGE DC collector current, (limited by bond wire) IC 20 A TC = 60 C 42 TC = 90 C 32 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 104 TC = 90 C 64 IF Diode forward current TC = 90 C 31 Pulsed diode current, tp = 1 ms IFpuls TC = 25 C 180 Ptot Power dissipation TC = 25 C W 200 Chip or operating temperature Tj - 55 ... + 150 Storage temperature Tstg - 55 ... + 150 Semiconductor Group 1 C Dec-02-1996 BUP 603D Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values Unit E - 55 / 150 / 56 Thermal Resistance Thermal resistance, chip case RthJC Diode thermal resistance, chip case RthJCD 0.63 K/W 1 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.7 mA, Tj = 25 C V 4.5 5.5 6.5 VGE = 15 V, IC = 30 A, Tj = 25 C - 2.1 2.7 VGE = 15 V, IC = 30 A, Tj = 125 C - 2.2 2.8 VGE = 15 V, IC = 60 A, Tj = 25 C - 3 - VGE = 15 V, IC = 60 A, Tj = 125 C - 3.3 - Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 600 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current A - - 300 IGES VGE = 25 V, VCE = 0 V nA - - 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 30 A Input capacitance 6 pF - 1600 2150 - 170 260 - 100 150 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Dec-02-1996 BUP 603D Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 300 V, VGE = 15 V, IC = 30 A RGon = 33 Rise time - 50 75 - 80 120 - 250 340 - 500 700 tr VCC = 300 V, VGE = 15 V, IC = 30 A RGon = 33 Turn-off delay time td(off) VCC = 300 V, VGE = -15 V, IC = 30 A RGoff = 33 Fall time tf VCC = 300 V, VGE = -15 V, IC = 30 A RGoff = 33 Free-Wheel Diode Diode forward voltage VF V IF = 20 A, VGE = 0 V, Tj = 25 C - 1.8 - IF = 20 A, VGE = 0 V, Tj = 125 C - 1.6 - Reverse recovery time trr ns IF = 20 A, VR = -300 V, VGE = 0 V diF/dt = -300 A/s, Tj = 25 C Reverse recovery charge - 110 160 Qrr C IF = 20 A, VR = -300 V, VGE = 0 V diF/dt = -300 A/s Tj = 25 C - 0.6 1.1 Tj = 125 C - 1.3 2.4 Semiconductor Group 3 Dec-02-1996 BUP 603D Power dissipation Ptot = (TC) parameter: Tj 150 C Ptot Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 220 55 W A 180 IC 45 160 40 140 35 120 30 100 25 80 20 60 15 40 10 20 5 0 0 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C TC 160 TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 3 IGBT 10 0 A K/W IC t = 12.0s p 10 2 ZthJC 10 -1 100 s 10 1 D = 0.50 0.20 1 ms 10 -2 0.10 0.05 10 0 10 ms 0.02 single pulse 0.01 DC 10 -1 0 10 10 1 10 2 V 10 10 -3 -5 10 3 VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Dec-02-1996 BUP 603D Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 60 60 A 50 IC 45 40 A 17V 15V 13V 11V 9V 7V 50 IC 45 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 17V 15V 13V 11V 9V 7V 0 0 1 2 3 V 5 0 VCE 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 60 A 50 IC 45 40 35 30 25 20 15 10 5 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Dec-02-1996 BUP 603D Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 33 par.: VCE = 300 V, VGE = 15 V, IC = 30 A 10 3 10 3 tf tdoff tf t t ns ns tdoff tr tr 10 10 2 tdon 2 tdon 10 1 0 10 20 30 40 50 60 A IC 10 1 0 80 20 40 60 80 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 33 E 120 RG par.: VCE = 300V, VGE = 15 V, IC = 30 A 10 5.0 mWs mWs 8 E 7 4.0 3.5 6 3.0 Eoff 5 Eoff Eon 2.5 4 Eon 2.0 3 1.5 2 1.0 1 0.5 0 0.0 0 10 20 Semiconductor Group 30 40 50 60 A IC 80 0 6 20 40 60 80 120 RG Dec-02-1996 BUP 603D Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 30 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 C 100 V 14 Ciss 300 V 10 0 12 10 8 Coss 10 -1 Crss 6 4 2 0 0 20 40 60 80 100 nC 130 10 -2 0 5 10 15 20 25 30 V 40 VCE Q Gate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 50 nH ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 10 2.5 I Csc/I C(90C) ICpuls /IC 6 1.5 4 1.0 2 0.5 0 0.0 0 100 200 Semiconductor Group 300 400 500 600 V 800 VCE 7 0 100 200 300 400 500 600 V 800 VCE Dec-02-1996 BUP 603D Typ. forward characteristics Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IF = f (VF) parameter: Tj Diode 10 1 40 K/W A IF ZthJC 30 25 Tj=125C 10 0 10 -1 Tj=25C 20 D = 0.50 10 -2 0.20 15 0.10 0.05 10 10 -3 0.02 single pulse 0.01 5 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF Semiconductor Group 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Dec-02-1996