Semiconductor Group 1 Dec-02-1996
BUP 603D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode Pin 1 Pin 2 Pin 3
G C E
Type
V
CE
I
CPackage Ordering Code
BUP 603D 600V 42A TO-218 AB Q67040-A4230-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CE 600 V
Collector-gate voltage
R
GE = 20 kΩ
V
CGR 600
Gate-emitter voltage
V
GE ± 20
DC collector current, (limited by bond wire)
T
C = 60 °C
T
C = 90 °C
I
C
32
42 A
Pulsed collector current,
t
p = 1 ms
T
C = 25 °C
T
C = 90 °C
I
Cpuls
64
104
Diode forward current
T
C = 90 °C
I
F 31
Pulsed diode current,
t
p = 1 ms
T
C = 25 °C
I
Fpuls 180
Power dissipation
T
C = 25 °C
P
tot 200 W
Chip or operating temperature
T
j- 55 ... + 150 °C
Storage temperature
T
stg - 55 ... + 150
Semiconductor Group 2 Dec-02-1996
BUP 603D
Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
R
thJC ≤ 0.63 K/W
Diode thermal resistance, chip case
R
thJCD 1
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
GE =
V
CE,
I
C = 0.7 mA,
T
j = 25 °C
V
GE(th) 4.5 5.5 6.5 V
Collector-emitter saturation voltage
V
GE = 15 V,
I
C = 30 A,
T
j = 25 °C
V
GE = 15 V,
I
C = 30 A,
T
j = 125 °C
V
GE = 15 V,
I
C = 60 A,
T
j = 25 °C
V
GE = 15 V,
I
C = 60 A,
T
j = 125 °C
V
CE(sat)
-
-
-
-
3.3
3
2.2
2.1
-
-
2.8
2.7
Zero gate voltage collector current
V
CE = 600 V,
V
GE = 0 V,
T
j = 25 °C
I
CES - - 300 µA
Gate-emitter leakage current
V
GE = 25 V,
V
CE = 0 V
I
GES - - 100 nA
AC Characteristics
Transconductance
V
CE = 20 V,
I
C = 30 A
g
fs 6 - - S
Input capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
iss - 1600 2150 pF
Output capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
oss - 170 260
Reverse transfer capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
rss - 100 150
Semiconductor Group 3 Dec-02-1996
BUP 603D
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at
T
j = 125 °C
Turn-on delay time
V
CC = 300 V,
V
GE = 15 V,
I
C = 30 A
R
Gon = 33 Ω
t
d(on)
- 50 75
ns
Rise time
V
CC = 300 V,
V
GE = 15 V,
I
C = 30 A
R
Gon = 33 Ω
t
r
- 80 120
Turn-off delay time
V
CC = 300 V,
V
GE = -15 V,
I
C = 30 A
R
Goff = 33 Ω
t
d(off)
- 250 340
Fall time
V
CC = 300 V,
V
GE = -15 V,
I
C = 30 A
R
Goff = 33 Ω
t
f
- 500 700
Free-Wheel Diode
Diode forward voltage
I
F = 20 A,
V
GE = 0 V,
T
j = 25 °C
I
F = 20 A,
V
GE = 0 V,
T
j = 125 °C
V
F
-
- 1.6
1.8 -
-V
Reverse recovery time
I
F = 20 A,
V
R = -300 V,
V
GE = 0 V
d
iF/
d
t = -300 A/µs,
T
j = 25 °C
t
rr
- 110 160
ns
Reverse recovery charge
I
F = 20 A,
V
R = -300 V,
V
GE = 0 V
d
iF/
d
t = -300 A/µs
T
j = 25 °C
T
j = 125 °C
Q
rr
-
- 1.3
0.6 2.4
1.1
µC
Semiconductor Group 4 Dec-02-1996
BUP 603D
Power dissipation
P
tot = ƒ(
T
C)
parameter:
T
j ≤ 150 °C
020 40 60 80 100 120 °C 160
T
C
0
20
40
60
80
100
120
140
160
180
W
220
P
tot
Collector current
I
C = ƒ(
T
C)
parameter:
V
GE ≥ 15 V ,
T
j ≤ 150 °C
020 40 60 80 100 120 °C 160
T
C
0
5
10
15
20
25
30
35
40
45
A
55
I
C
Safe operating area
I
C = ƒ(
V
CE)
parameter:
D
= 0
, T
C = 25°C ,
T
j ≤ 150 °C
-1
10
0
10
1
10
2
10
3
10
A
I
C
10 0 10 1 10 2 10 3
V
V
CE
DC
10 ms
1 ms
100 µs
t
p = 12.0µs
Transient thermal impedance IGBT
Z
th JC = ƒ(
t
p)
parameter:
D = t
p /
T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 5 Dec-02-1996
BUP 603D
Typ. output characteristics
I
C
=
f
(
V
CE)
parameter:
t
p = 80 µs,
T
j = 25 °C
0 1 2 3 V 5
V
CE
0
5
10
15
20
25
30
35
40
45
50
A
60
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
=
f
(
V
CE)
parameter:
t
p = 80 µs,
T
j = 125 °C
0 1 2 3 V 5
V
CE
0
5
10
15
20
25
30
35
40
45
50
A
60
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
=
f
(
V
GE)
parameter:
t
p = 80 µs,
V
CE = 20 V
0246810 V 14
V
GE
0
5
10
15
20
25
30
35
40
45
50
A
60
I
C
Semiconductor Group 6 Dec-02-1996
BUP 603D
Typ. switching time
t
=
f
(
R
G)
,
inductive load ,
T
j = 125°C
par.:
V
CE = 300 V,
V
GE = ± 15 V,
I
C = 30 A
020 40 60 80 Ω120
R
G
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
I
=
f
(
I
C)
,
inductive load ,
T
j = 125°C
par.:
V
CE = 300 V,
V
GE = ± 15 V,
R
G = 33 Ω
010 20 30 40 50 60 A 80
I
C
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f
(
I
C)
,
inductive load ,
T
j = 125°C
par.:
V
CE = 300 V,
V
GE = ± 15 V,
R
G = 33 Ω
010 20 30 40 50 60 A 80
I
C
0
1
2
3
4
5
6
7
8
mWs
10
E
Eon
Eoff
Typ. switching losses
E = f
(
R
G)
,
inductive load
, T
j = 125°C
par.:
V
CE = 300V,
V
GE = ± 15 V,
I
C = 30 A
020 40 60 80 Ω120
R
G
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
mWs
5.0
E
Eon
Eoff
Semiconductor Group 7 Dec-02-1996
BUP 603D
Typ. gate charge
V
GE = ƒ(
Q
Gate)
parameter:
I
C puls = 30 A
020 40 60 80 100 nC 130
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
300 V100 V
Typ. capacitances
C
=
f
(
V
CE)
parameter:
V
GE = 0 V, f = 1 MHz
0 5 10 15 20 25 30 V 40
V
CE
-2
10
-1
10
0
10
1
10
nF
C Ciss
Coss
Crss
Short circuit safe operating area
I
Csc =
f
(
V
CE) ,
T
j = 150°C
parameter:
V
GE = ± 15 V,
t
sc
≤ 10 µs, L < 50 nH
0100 200 300 400 500 600 V 800
V
CE
0
2
4
6
10
I
Csc/
I
C(90°C)
Reverse biased safe operating area
I
Cpuls =
f
(VCE) ,
T
j = 150°C
parameter:
V
GE = 15 V
0100 200 300 400 500 600 V 800
V
CE
0.0
0.5
1.0
1.5
2.5
I
Cpuls/
I
C
Semiconductor Group 8 Dec-02-1996
BUP 603D
Typ. forward characteristics
I
F =
f
(
V
F)
parameter:
T
j
0.0 0.5 1.0 1.5 2.0 V 3.0
V
F
0
5
10
15
20
25
30
A
40
I
F
T
j=25°C
=125°C
j
T
Transient thermal impedance Diode
Z
th JC = ƒ(
t
p)
parameter:
D = t
p /
T
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
