Issue 1 - October 2007 1 www.zetex.com
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ZXGD3001E6
9A(peak) Gate driver in SOT23-6
General description
The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A
into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation
delay times down to 3ns and rise/fall times down to 11ns this device ensures rapid switching of the
power MOSFET or IGBT to minimize power losses and distortion in high current fast switching
applications.
The ZXGD3001E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage
range allows full enhancement to minimize on-losses of the power MOSFET or IGBT.
Its low input voltage requirement and high current gain allows high current driving from low voltage
controller ICs, and the optimized pin-out SOT23-6 package with separate source and sink pins eases
board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.
Features
• 12V operating voltage range
• 9 Amps peak output current
• Fast switching emitter-follower configuration
• 3ns propagation delay time
• 11ns rise/fall time, 1000pF load
• Low input current requirement
• 4.2A(source)/2.2A(sink) output current from 10mA input
• SOT23-6 package
• Separate source and sink outputs for independent control of rise and fall time
• Optimized pin-out to ease board layout and minimize trace inductance
• No Latch Up
• No shoot through
• Near - Zero quiescent and output leakage current
Typical application circuit
GND SINK
VCC
IN1
IN2
SOURCE
VS
Input
VCC
Input ZXGD3001
ZXGD3001E6
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Applications
Power MOSFET and IGBT Gate Driving in
• Synchronous switch-mode power supplies
• Secondary side synchronous rectification
• Plasma Display Panel power modules
• 1, 2 and 3-phase motor control circuits
• Audio switching amplifier power output stages
Pin configuration
Ordering information
Device marking
3001
Pin
Name
Pin Function
VCC Driver supply
IN1 / IN2Driver input pins. These are normally
connected together by circuit tracks.
GND Ground
SOURCE Source current output.
SINK Sink current output.
DEVICE Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXGD3001E6TA 7 8 embossed 3000
VCC
IN1
GND
SOT236
Top view
SOURCE
IN2
SINK
ZXGD3001E6
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© Zetex Semiconductors plc 2007
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For device with two active dice running at equal power.
(c) Pulse width <=300␮s limit repetition rate to comply with maximum junction temperature.
Parameter Symbol Limit Unit
Supply voltage VCC 12 V
Input voltage VIN 12 V
Peak sink current(c) I(sink)PK 9A
Source current @ IIN1 + IIN2 =10mA(a) I(source) 4.2 A
Sink current @ IIN1 + IIN2 =10mA(a) I(sink) 2.2 A
Input current(c) IIN1, IIN2 1A
Power dissipation at TA =25°C(a)(b)
Linear derating factor
PD1.1
8.8
W
mW/°C
Operating and storage temperature range Tj, Tstg
-55 to +150
°C
Parameter Symbol Value Unit
Junction to ambient(a)(b) R␪JA 113 °C/W
ZXGD3001E6
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Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Switching Time Test Circuits Timing Diagram
Parameter Symbol Min. Typ. Max. Unit Conditions
Output voltage, high VOH VCC –
0.4
VI
SOURCE = 1␮A
Output voltage, low VOL 0.4 V ISINK = 1␮A
Source output leakage
current
IL(source) 1␮AV
CC = 12V,
VIN1 = VIN2 = 0V
Sink output leakage
current
IL(sink) 1␮AV
CC = 12V,
VIN1 = VIN2 = VCC
Quiescent current IQ50 nA VCC = 9.6V,
VIN1 = VIN2 = 0V
Source output current I(source) 11.7 AI
IN1+ IIN2 = 2.5mA
Sink output current I(sink) 0.7 1.1 A IIN1+ IIN2 = 2.5mA
Source output current I(source) 2.7 4.2 A IIN1+ IIN2 = 10mA
Sink output current I(sink) 1.5 2.2 A IIN1+ IIN2 = 10mA
Source output current
I
(source)PK
9AI
IN1+ IIN2 = 1A
Sink output current I(sink)PK 9AI
IN1+ IIN2 = 1A
Gate driver
switching times
td(rise)
tr
td(fall)
tf
1.3
7.3
3
11
ns
ns
ns
ns
CL=1nF, RL=1⍀, VCC=8V,
VIN=6V, RS=25⍀
Gate driver
switching times
td(rise)
tr
td(fall)
tf
9
141.5
14
151
ns
ns
ns
ns
CL=1nF, RL=1⍀, VCC=8V,
VIN=6V, RS=1k⍀
ZXGD3001E6
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Typical gate driver characteristics
ZXGD3001E6
Issue 1 - October 2007 6 www.zetex.com
© Zetex Semiconductors plc 2007
ZXGD3001E6
Issue 1 - October 2007 7 www.zetex.com
© Zetex Semiconductors plc 2007
SOT23-6 Package outline Pad latout details
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
DIM Millimeters Inches
Min. Max. Min. Max.
A 0.90 1.45 0.0354 0.0570
A1 0.00 0.15 0.00 0.0059
A2 0.90 1.30 0.0354 0.0511
b 0.35 0.50 0.0078 0.0196
C 0.09 0.26 0.0035 0.0102
D 2.70 3.10 0.1062 0.1220
E 2.20 3.20 0.0866 0.1181
E1 1.30 1.80 0.0511 0.0708
L 0.10 0.60 0.0039 0.0236
e 0.95 REF 0.0374 REF
e1 1.90 REF 0.0748 REF
L 0° 30° 0° 30°
mm
inches
0.65
0.026
2.2
0.087
1.06
0.042
0.95
0.037
ZXGD3001E6
Issue 1 - October 2007 8 www.zetex.com
© Zetex Semiconductors plc 2007
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© 2007 Published by Zetex Semiconductors plc
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