PD - 93841 IRFBL3703 SMPS MOSFET HEXFET(R) Power MOSFET Applications l Synchronous Rectification in High Power High Frequency DC/DC Converters VDSS RDS(on) max ID 30V 0.0025 260A Benefits >1mm lower profile than D2Pak Same footprint as D2Pak Low Gate Impedance to Reduce Switching Losses l Ultra Low On-Resistance l Fully Avalanche Rated l l l Super-D2PakTM Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TA = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 260 180 Units 1000 300 3.8 2.0 20 5.0 -55 to + 175 A W W/C V V/ns C Typical SMPS Topologies l Forward and Bridge Converters with Synchronous Rectification for Telecom and Industrial Applications Notes through are on page 8 www.irf.com 1 4/5/00 IRFBL3703 Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 2.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.028 2.0 2.5 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 2.5 VGS = 10V, ID = 76A m 3.6 VGS = 7.0V, ID = 76A 4.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 150 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 209 62 42 18 123 53 24 8250 3000 290 10360 3060 2590 Max. Units Conditions --- S VDS = 24V, ID = 76A --- ID = 76A --- nC VDS = 24V --- VGS = 10V, --- VDD = 15V, VGS = 10V --- ID = 76A ns --- RG = 1.8 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 24V, = 1.0MHz --- VGS = 0V, VDS = 0V to 24V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 1700 76 30 mJ A mJ Typ. Max. Units --- --- 0.5 40 C/W Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Diode Characteristics IS I SM VSD t rr Q rr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- 260 --- --- 1000 --- --- --- 0.8 80 185 A 1.3 120 275 V ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 76A, VGS = 0V TJ = 25C, IF = 76A, V DS = 16V di/dt = 100A/s www.irf.com IRFBL3703 10000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1000 100 100 4.5V 10 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 C TJ = 175 C 100 V DS = 15V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 1 10 100 Fig 2. Typical Output Characteristics 10000 10 4.0 20s PULSE WIDTH TJ = 175 C VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 4.5V 10 0.1 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 260A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFBL3703 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 12000 10000 Ciss 8000 6000 Coss 4000 2000 ID = 76A VDS = 24V VGS, Gate-to-Source Voltage (V) 14000 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 0 1 10 100 0 40 80 120 160 200 240 280 320 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 TJ = 175 C 1000 10 TJ = 25 C 100us 100 1ms 1 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10us TC = 25 C TJ = 175 C Single Pulse 10 2.4 1 10ms 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFBL3703 300 RD VDS LIMITED BY PACKAGE VGS 250 D.U.T. RG + I D , Drain Current (A) -VDD 200 10V Pulse Width 1 s Duty Factor 0.1 % 150 100 Fig 10a. Switching Time Test Circuit VDS 50 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFBL3703 ID 31A 54A 76A TOP 5000 D R IV E R L VDS EAS , Single Pulse Avalanche Energy (mJ) 6000 1 5V BOTTOM 4000 D .U .T RG + V - DD IA S 20V 0 .0 1 tp A 3000 2000 Fig 12a. Unclamped Inductive Test Circuit 1000 0 25 V (B R )D SS tp 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50K 12V .2F .3F 10 V QGS QGD D.U.T. + V - DS VGS VG 3mA IG ID Current Sampling Resistors Charge Fig 13a. Basic Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit www.irf.com IRFBL3703 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFET www.irf.com 7 IRFBL3703 Super-D2PakTM Package Outline Dimensions are shown in millimeters (inches) 4.0 [.157] 3.0 [.119] 10.9 [.429] 9.9 [.390] MINIMUM RECOMMENDED FOOTPRINT 9.02 [.355] 8.65 [.341] 0.9 [.035] 0.7 [.028] 9.05 [.356] 3 1 9.2 [.362] 9.0 [.355] 3 15.2 [.598] 14.2 [.560] 13.0 [.511] 12.0 [.473] 9.68 [.381] 15.70 [.618] 2 1 2X 2.54 [.100] 1.2 [.047] 0.8 [.032] 0.25 [.010] B A 2X 0.9 [.035] 0.7 [.028] 2.37 [.093] 2 2X 1.61 [.063] 1.8 [.070] 1.0 [.040] 4 2X 2.55 [.100] 0.15 [.006] 3 S URFACES NOT ES: LEAD AS SIGNMENTS 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONT ROLLING DIMENS ION: MILLIMETER. 4 DIMENSION IS MEASURED AT FULL LEAD WIDT H. MOSFET 1 = GAT E 2 = S OURCE 3 = DRAIN SCHOTT KY / FRED 1 = ANODE 1 2 = ANODE 2 3 = COMMON CATHODE Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.6mH RG = 25, I AS = 76A. ISD 76A, di/dt 100A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 95A IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 8 www.irf.com