4/5/00
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IRFBL3703
SMPS MOSFET
HEXFET® Power MOSFET
lSynchronous Rectification in High
Power High Frequency DC/DC Converters
Benefits
Applications
l>1mm lower profile than D2Pak
lSame footprint as D2Pak
lLow Gate Impedance to Reduce Switching
Losses
lUltra Low On-Resistance
lFully Avalanche Rated
VDSS RDS(on) max ID
30V 0.0025Ω260A
Typical SMPS Topologies
l Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
Absolute Maximum Ratings
PD - 93841
Notes through are on page 8
Super-D2PakTM
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 260
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 180 A
IDM Pulsed Drain Current 1000
PD @TC = 25°C Power Dissipation 300 W
PD @TA = 25°C Power Dissipation 3.8
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 175 °C
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Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
––– 2.0 2.5 VGS = 10V, ID = 76A
––– 2.5 3.6 VGS = 7.0V, ID = 76A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 24V, VGS = 0V
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 150 ––– ––– S VDS = 24V, ID = 76A
QgTotal Gate Charge –– – 209 –– – ID = 76A
Qgs Gate-to-Source Charge ––– 62 ––– nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– 42 ––– VGS = 10V,
td(on) Turn-On Delay Time ––– 18 ––– VDD = 15V, VGS = 10V
trRise Time ––– 123 ––– ID = 76A
td(off) Turn-Off Delay Time ––– 53 ––– RG = 1.8Ω
tfFall Time ––– 24 ––– VGS = 10V
Ciss Input Capacitance ––– 8250 ––– VGS = 0V
Coss Output Capacitance ––– 3000 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 290 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 10360 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 3060 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 2590 ––– VGS = 0V, VDS = 0V to 24V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 1700 mJ
IAR Avalanche Current––– 76 A
EAR Repetitive Avalanche Energy––– 30 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– 0.8 1.3 V TJ = 25°C, IS = 76A, VGS = 0V
trr Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 76A, V DS = 16V
Qrr Reverse RecoveryCharge ––– 185 275 nC di/dt = 100A/µs
Diode Characteristics
260
1000 A
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance mΩ
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.5
RθJA Junction-to-Ambient ––– 40 °C/W
Thermal Resistance
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
10000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
10000
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
260A
IRFBL3703
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1 10 100
0
2000
4000
6000
8000
10000
12000
14000
V , Drain-to-Source Volta
g
e (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
0.1
1
10
100
1000
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
10
100
1000
10000
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 175 C
= 25 C
°°
J
C
V , Drain-to-Source Volta
g
e (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
040 80 120 160 200 240 280 320
0
4
8
12
16
20
Q , Total Gate Char
g
e (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
76A V = 24V
DS
IRFBL3703
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Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150 175
0
50
100
150
200
250
300
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
1000
2000
3000
4000
5000
6000
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
31A
54A
76A
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFET
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRFBL3703
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Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ 76A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 0.6mH
RG = 25Ω, IAS = 76A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% V DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 95A
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
Super-D2PakTM Package Outline
Dimensions are shown in millimeters (inches)
0.25 [.010] B A
4.0 [.157]
3.0 [.119]
9.2 [.362]
9.0 [.355]
1.2 [.047]
0.8 [.032]
2.54 [.100] 2X
12
3
3
13.0 [.511]
12.0 [.473]
10.9 [.429]
9.9 [.390]
15.2 [.598]
14.2 [.560]
0.15 [.006]
0.9 [.035]
0.7 [.028] 1.8 [.070]
1.0 [.040]
0.9 [.035]
0.7 [.028]
9.02 [.355]
8.65 [.341]
3 SURFACES
4
21
2X
MINIMUM RECO MM ENDED FOOTPRINT
9.05 [.356]
15.70 [.618]
2X 1.61 [.063]
2X 2.55 [.100]
2.37 [.093]
9.68 [.381]
1. DIMENSIONING & TO LERANCING PER ASME Y14.5M -19 94.
3. CONTROLLING DI MENS ION: MILLIMETER.
2. DIMENSIONS ARE SHO WN IN M ILLIMETERS [INCHES].
NOTES:
4 DIMENSION IS MEASURED AT FULL LEA D WIDTH.
LEAD ASS IGNMENTS
1 = GATE
2 = SOURCE
3 = DRAIN
MOS F E T
1 = A NO DE 1
2 = A NO DE 2
3 = C OM MO N CATHODE
SCH OTTKY / FR ED
