Oo SEMICONDUCTOR TECHNICAL DATA 2N3019S _ 2N3057A NPN Silicon Suite 14 Small-Signal Transistors Ronkonkoma, NY. 11778 _, designed for general-purpose switching and amplitier applications. MAXIMUM RATINGS Rating Symbo! | 2N30195 [ ansos7a | 2Ng700_ | Unit Collector-Base Voltage VcsO 140 Vde | Collector-Base Voltage | CBO fee | Collector-Emitter Voltage VCEO 80 Vde ee Emitter-Base Voltage VEBO 7.0 Vde Coliector Current Ic 1.0 Adc rn Device Dissipation PT watts 2N30195 @Ta=25C CASE 79-04, STYLE 1 Darate above 25 C we Cc TO-205AD (TO-39) @1p=25C wee Derate above 25 C " Operating Junction and Storage Ty. Tsig --66 to 200 Cc Temperature Range 2N3700 OFF CHARACTERISTICS CASE 22-03, STYLE 1 Collector-Emitter Breakdown Voltage!* ' ViBR)CEO TO-206AA (TO-18) {Ig = 30 mAdc) Emutter-Base Breakdown Vollage V(BR)}EBO (ig = 100 pAdc) Collector-Base Breakdown Voltage ViBRICBO (Ig = 100 pAde) Collector Cutot Current (VCE = 90 Vde) (VcE = 90 Vac. Ta = 150 C1 2N3057A CASE 26-03, STYLE 1 Emutter Cutoff Current . Wge = 50 Vdc) TO-206AB (TO-46) 1, Pu'sen Puce Wide 28 2 ers Day Gyre Sot at contin eds2N3019SJAN, 2N3057AJAN, 2N3700JAN SERIES ELECTRICAL CHARACTERISTICS continued Tc = 25C unless otherwise noted.) Characteristic | sympot [owin | Max [unit ON CHARACTERISTICS OC Current Gain NRE (VCE = 10 Vde, ic = 150 mAdc)i1) 100 300 (VCE = 10 Ve, Ic = 0.1 mAdc) 50 200 (VCE = 10 Vde. Ig = 10 mAdc) (1) 90 - (VCE = 10 Vode, ic = 500 mAde}!1) 50 200 (VcE = 10 Vde, IG =1.0nmde 15 _ (VCE = 10 Vdc, Io = 150 mAdc. Ta = ~65C)(1) 40 _ Collector-Emitter Saturation Voitage(1) VCE(sat) (Ig = 150 mAdc, Ig = 15 mAdc) = 02 (ic = 500 mAdc, ig = 50 mAdc} = 0.5 Vde Base-Emitter Saturation Voltage! 1) VBE(saty _ ot (Ig = 150 mAdc, ip = 15 mAde) Vde SMALL-SIGNAL CHARACTERISTICS Smaii-Signal Current Gain Nt (VoE = 5.0 Ve, Ig = 1.0 mAds. f= 1.0 kHz} ao 400 (Vce = 10 Vde. Io = 50 mAdc, f = 20 MHz} 5.0 20 Input Capacitance Civo (Vep = 0.5 Vae, Ic = 0, f = 0.1 to 1.0 MHz) pF Output Capacitance Cobo (Vop = 10 Vde, ig = 0, f = 0.1 ta 1.0 MHz) pF Naise Figure NF (VCE = 10 Vde, Ip = 100 pAdc. f = 1.0 kHz Ag = 1 Okohm, Pwr. 8.W. = 200 Hz) dB Collector Base Time Constant tp'Ce (Veg = 10 Vie, Ig = 10 mAde, f = 79.8 MHz) SWITCHING CHARACTERISTICS (See Figure 21) Turn-On + Turn-Off Time I ton + tott | I 30 SAFE OPERATING AREA DC Tests (To = 28C, t= 10 ms, one cycle} Teat 1 (Ic = 500 mAdc, VoE = 10 Vde) 2N3019 (Iq = 180 MAdc, Voge = 10 Vde) = 2N3700. 2N3057A Test 2 (Ig = 125 mAdc, VoE = 40 Vde) 2N3019 (ig = 45 mAdc, VcE = 40 Vde) 2N3700. 2N3057A Test 3 (Ic = 60 MAdeC, VoE = 80 Vac) 2N3019 (Ic = 22.5 mAdc. Voge = 80 Vdc) = 2N3700, 2N3057A END POINT ELECTRICAL MEASUREMENTS Collector- Emitter Cutoff Current Ices a 20 (VE = 90 Vdc) (Relaxed Limit) nAdc Collector-Base Saturation Voltaga(1) VCE(sat) (Ic = 150 Vue. ig = 15 mAdc) Vde 1H 300 OC Current Gain(1) (VCE = 10 Vde, Ip = 150 mAdc) +1 Pulsed Pulse Width 250 to 350 1s Duty Cycle 10 to 20 ASSURANCE TESTING (Pre/Post Burn-in) | Burn-in Conditions: Ta = 25 =5C, Vop = 60 Vde, 10 Vdc JANS Py = 600 mW 2N3019S, 400 mW 2N3057A, 500 mW 2N3700 Initial and End Point Limits Characteristics Tested Symbol Min Max Unit Collector Cutoff Current IcES = 10 iVoe = 90 Vde) nAdc DC Current Gain!) nrE 100 300 (Vog = 10 Vdc. I = 150 mAdc) [ Delta trom Pre-Burn-in Measured Values Min Max | Delta Collector CutoH Current ACES = +100 o of Initial Value ! or +5.0 Md i whichever is greater i : Delta DC Current Gain!) SFE = 15 % of inal Value | Pulsed Pulse Win 56 to 350 us Duly Cycle 10 to 2 07