FDB6030BLL86Z - Fairchild Semiconductor Corporation

FDP6030BL/FDB6030BL

FDP6030BL/FDB6030BL Rev.C

July 2000

200 Fairchild Semiconductor International

FDP6030BL/FDB6030BL

N-Channel Logic Level PowerTrench



 MOSFET

Features

• 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V

RDS(ON) = 0.024 Ω @ VGS = 4.5 V.

• Critical DC electrical parameters specified at elevated

temperature.

• Rugged internal source-drain diode can eliminate the

need for an external Zener diode transient suppressor.

• High performance trench technology for

extremely low RDS(ON).

• 175°C maximum junction temperature rating.

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FDP6030BL FDB6030BL Units

VDSS Drain-Source Voltage 30 V

VGSS Gate-Source Voltage ±20 V

IDMaximum Drai n Current - Conti nuous (Note 1) 40

- Pulsed 120 A

Total Power Dissipat i on @ TC = 25°C60 W

Derate above 25°C0.36 W/°C

TJ, TSTG Operating and Storage Junction Temperature Range -65 to +175 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDB6030BL FDB6030BL 13’’ 24mm 800

FDP6030BL FDP6030BL Tube N/A 45

GDTO-220

FDP Seri es

GSTO-263AB

FDB Seri es

General Description

This N-Channel Logic Level MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower gate

charge than other MOSFETs with comparable RDS(on)

specifications resulting in DC/DC power supply designs

with higher overall efficiency.

FDP6030BL/FDB6030BL

FDP6030BL/FDB6030BL Rev.C

Electrical Characteristics TC = 25°C unless otherwise noted

mbol Paramete r Test Conditions Min Typ Max Units

DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

WDSS Single Pulse Drain-Source

Avalanche Energy VDD = 15 V, ID = 40 A 150 mJ

IAR Maximum Drain-Source Avalnche Current 40 A

Off Characteristics

BVDSS Drain-Source Breakdown Volta

eVGS = 0 V, ID = 250 µA30 V

∆BVDSS

∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C23 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA

IGSSF Gate-Body Leakage Current,

Forward VGS = 20 V, VDS = 0 V 100 nA

IGSSR Gate-Body Leakage Current,

Reverse VGS = -20 V, VDS = 0 V -100 nA

On Characteristics (Note 1)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA11.6 3 V

∆VGS(th)

∆TJ

Gate Threshold Voltage

Temperature Coeff icient ID = 250 µA, Ref erenced to 25°C-4.5 mV/°C

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 20 A,

VGS = 10 V, ID = 20 A, TJ = 125°C

VGS = 4.5 V,ID = 17 A

0.015

0.021

0.019

0.018

0.030

0.024

Ω

ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 40 A

gFS Forward Transconductance VDS = 5 V, ID = 20 A 30 S

Dynamic Characteristics

Ciss Input Capacit ance 1160 pF

Coss Output Capacit ance 250 pF

Crss Reverse Transfer Capacitance

VDS = 15 V, VGS = 0 V,

f = 1.0 MHz

100 pF

Switching Characteristics (Note 1)

td(on) Turn-On Delay Ti m e 9 17 ns

trTurn-On Rise Time 11 20 ns

td(off) Tu rn-Of f Delay Time 23 37 ns

tfTurn-Off Fal l T i m e

VDD = 15 V, ID = 1 A,

VGS = 10 V, RGEN = 6 Ω

816ns

QgTotal Gate Charge 12 17 nC

Qgs Gate-Source Charge 3.2 nC

Qgd Gate-Drain Charge

VDS = 15 V,

ID = 20 A, VGS = 5 V

3.7 nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current (Note 1) 40 A

VSD Drain-Source Diode Forward

Voltage VGS = 0 V, IS = 20 A (Note 1) 0.95 1.2 V

Note:

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

FDP6030BL/FDB6030BL

FDP6030BL/FDB6030BL Rev.C

Typical Characteristics

Figure 3. On-Resistance V ariation

with Temperature. Figure 4. On-Resistance Variation

with Gate-to-Source V oltage.

Figure 5. T ransfer Characteristics. Figure 6. Body Diode Forward Voltage

V ariation with Source Current

and Temperature.

Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation

with Drain Current and Gate Voltage.

012345

VDS, DRAIN-SOURCE VOLTAGE (V)

ID, DRAIN-SOURCE CURRENT (A)

VGS = 10V

4.0V

5.0V

4.5V

6.0V

3.0V

3.5V

0.8

1.2

1.4

1.6

1.8

2.2

2.4

2.6

0 1020304050

, DRAIN CURRENT (A)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

= 3.0V

10V

4.0V

3.5V

4.5V 5.0V

7.0V

0.6

0.8

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE

(

)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

= 20A

= 10V

0.01

0.02

0.03

0.04

0.05

0.06

246810

VGS, GATE TO SOURCE VOLTAGE (V)

RDS(ON), ON-RESISTANCE (OHM)

ID = 10 A

TA = 125oC

TA = 25oC

12345

VGS, GATE TO SOURCE VOLTAGE (V)

ID, DR AIN CURRENT (A)

TA = -55oC25oC

125oC

VDS = 5V

0.0001

0.001

0.01

0.1

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

IS, REVERSE DRAIN CURRENT (A

)

TA = 125oC

25oC

-55oC

VGS = 0V

FDP6030BL/FDB6030BL

FDP6030BL/FDB6030BL Rev.C

Typical Characteristics (continued)

Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

Figure 1 1. T ransient Thermal Response Curve.

200

400

600

800

1000

1200

1400

1600

0 5 10 15 20 25 30

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANC E (pF)

CISS

COSS

CRSS

f = 1 MHz

VGS = 0 V

100

1000

0.1 1 10 100

VDS, DRAIN-SO URCE VO LTAGE ( V )

ID, DRAIN CURRENT (A)

RDS(ON) LIMIT

VGS = 10V

SINGLE PULSE

RθJC = 2.5oC/W

TC = 25oC

100ms

10ms 1ms

100

0.01 0.1 1 10 100 1000

0.01

0.02

0.03

0.05

0.1

0.2

0.3

0.5

t ,TIME (ms)

TRANSIEN T THERMAL R ESISTANCE

Single Pulse

D = 0.5

0.1

0.05

0.02

0.2

Duty Cycle, D = t /t

1 2

R (t) = r(t) * R

R = 2.5 °C/W

θJC

T - T = P * R (t)

θJC

P(pk)

1 t

r(t), N ORMALIZED EFFECTIVE

0.01

0 5 10 15 20 25

Qg, GATE CHARGE (nC )

VGS, GATE-S O URCE VOLTAGE (V)

ID = 20A VDS = 5V 10V

15V

0.01 0.1 1 10 100 1,000

500

1000

1500

2000

2500

SINGLE PULSE TIME (mSEC)

POWER (W)

SINGLE PULSE

R =2.5°C/W

T = 25°C

θJC C

TO-220 Tape and Reel Data and Package Dimensions

August 1999, Rev. B

0.165

TO-220 Tube Packing

Configuration: Figure 1.0

Note/Comments

Packaging Option

TO-220 Packaging Information

Standard

(no

flow code)

Packaging type Rail/Tube

Qty per Tube/Box 45

Box Dimension (mm) 530x130x83

Max qty per Box 1,080

Weight per unit (gm) 1.4378

S62Z

BULK

300

114x102x51

1,500

1.4378

FSCINT Label

114mm x 102mm x 51mm

EO70 Immediate Box

530mm x 130mm x 83mm

Int ermed ia te box

300 un i ts pe r

EO70 box 5 EO70 boxes per per

Intermediate Box

1500 units m axim um

quantity per intermediate box

Anti-static

Bubbl e Sheets

45 units per Tube

Conduct ive Plastic Bag

1080 units m axim um

quantity per box

530mm x 130mm x 83mm

Int ermed ia te box

FSCINT Label

12 Tubes per Bag

Note: All dimensions are in inches

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

1.300

±.015

0.080

0.032

±.003

0.275

0.160

0.800

0.450

±.030

20.000

+0.031

-0.065

0.123

+0.001

-0.003

LOT:

CBVK741B019

NSID:

FDP7060

D/C1:

D9842

SPEC REV:

SPEC:

QTY:

1080

QA REV:

FAIRCHILD SEMICONDUCTOR CORPORATION

HTB:B

(FSCINT)

FSCINT Label sample

TO-220 Tube

Configuration: Figure 4.0

TO-220 Packaging

Information: Figure 2.0

TO-220 bulk Packing

Configuration: Figure 3.0

2 bags per Box

Packaging Description:

TO-220 parts are ship ped normally in tube. The tube is

made of PVC plastic treated with anti -stati c agent.These

tubes in standard option are placed inside a dissipative

plastic bag, barcode labeled, and placed inside a box

made of recyclable corrugated pa per. One box contains

t wo ba gs max im um (s ee f ig. 1.0). A nd o ne or se ver al o f

these boxes are placed inside a labeled shipping box

w h ic h com es in d if f er en t si z es de pe ndi n g o n t h e num b er

of parts shipped. The other option comes in bulk as

desc r ibed in t he Pack agin g In fo rm atio n table. The units in

this option are placed inside a small box laid w ith anti-

static bubb le sheet. Th ese smaller boxes are indi vidually

labeled and placed inside a larger box (see fig. 3.0).

These larger or intermediate boxes then will be placed

finally inside a labeled shippi ng box whic h still comes in

di fferent s i z es depending on t he num b er of units ship pe d.

TO-220 (FS PKG Code 37)

TO-220 Tape and Reel Data and Package Dimensions, continued

September 1998, Rev. A

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 1.4378

TO-263AB/D2PAK Packaging

Configuration: Figure 1.0

Components

TO-263AB/D2PAK Tape Leader and Trailer

Configuration: Figure 2.0

Cover Tape

Carrier Tape

Note/Comments

Packaging Option

TO-263AB/D2PAK Packaging Information

Standard

(no flow c ode) L86Z

Packaging type

Reel Size

TNR

13" Dia

Rail/Tube

Qty per Reel/Tube /Bag 800 45

Box Dimension (mm) 359x359x57 530x130x83

Max qty per Box 800 1,080

Weight per unit (gm) 1.4378 1.4378

Weig ht pe r Reel 1.6050 -

Moisture Sensitive

Label

DRYPACK Bag

ESD Label

F63TNR Label

359mm x 359mm x 57mm

St a nd ard I n te r m ed ia te bo x

TO-263AB/D2PAK Unit Orientation

FDB603AL

9835 FDB603AL

9835

FDB603AL

9835

FDB603AL

9835

F63TNR Label sample

Static Dissipative

Embossed Carri er Tape

F63TNR

Label

Antistatic Cover Tape

ESD Label

ELECTROSTATIC

SENSITIVE DEVICES

DO NOT SHI P OR STORE NEAR STRONG EL ECTROSTATIC

ELECTROMAGNETIC, MAGNETIC OR R ADIOACTI VE FIELDS

TN R DA T E

PT NUM B ER

PEEL STRENGTH MIN ___ __ ____ __ ___gms

MAX _____________ gms

CAUTION

Moisture Sensitive

Label

Customized

Label

LOT: CBVK741B019

FSID: FDB632 0 L

D/C1: D9842 QTY1: SPEC REV:

SPEC:

QTY: 800

D/C2: QTY2: CPN: N/F: F (F63TNR)3

Leader Tape

1520mm minimum or

95 empty poc kets

Tr aile r Tape

400mm min imum or

25 empty poc kets

Packaging Description:

TO-263/D2PAK parts are shipped in tape. The carrier tape

is made from a dissipative (carbon filled) polycarbonate

resin. The cover tape is a multilayer film (Heat Activated

Adhesive in nature) primarily composed of polyester film,

adhesive layer, sealant, and anti-static sprayed agent.

These reeled parts in standard option are shipped with

800 u nits per 13" or 330cm diameter ree l. The reels are

dark blue in color and is made of polystyrene plastic (anti-

static coated). This and some other options are further

described in the Packaging Information table.

These full reels are individually barcode labeled, dry

packed, and placed inside a standard intermediate box

(illustrated in figure 1.0) made of recyclable corrugated

brown paper. One box contains one reel maximum. And

these boxes are placed inside a barcode labeled shipping

box which comes in different sizes depending on the

num ber of parts shi pped.

TO-263AB/D2PAK Tape and Reel Data and Package

Dimensions

September 1999, Rev. B

A0 D1

Dimensions are in inches and millimeters

Tape Size Reel

Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

24m m 13" Dia 13.00

330 0.059

1.5 512 +0. 020/-0. 008

13 +0.5/-0.2 0.795

20.2 4.00

100 0.961 +0.078/-0.000

24.4 +2/0 1.197

30.4 0.941 – 0.1.079

23.9 – 27.4

See detail AA

Dim A

max

13" Diameter Option

Dim A

Max

W2 max Measured at Hub

W1 Measured at Hub

Dim N Dim D

min

Dim C

B Min

DETAIL AA

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

10 deg maximum component rotation

0.9mm

maximum

0.9mm

maximum

Sketch C (Top View)

Component lateral movement

Typical

component

cavity

center line

10 deg maximum

Typical

component

center line

Sketch B (Top View)

Component Rotation

Sketch A (Side or Front Sectional View)

Component Rotation

User Direction of Feed

TO-263AB/D

PAK Embossed Carrier Tape

Configuration: Figure 3.0

TO-263AB/D

PAK Reel Configuration:

Figure 4.0

Dimensions are in millimeter

P kg type

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

PAK

O263AB/

(24mm)

10.60

+/-0.10 15.80

+/-0.10 24.0

+/-0.3 1.55

+/-0.05 1.60

+/-0.10 1.75

+/-0.10 22.25

min 11.50

+/-0.10 16.0

+/-0.1 4.0

+/-0.1 4.90

+/-0.10 0.450

+/-0.150 21.0

+/-0.3 0.06

+/-0.02

TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued

August 1999, Rev. B

TO-263AB/D2PAK (FS PKG Code 45)

TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued

August 1998, Rev. A

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 1.4378

TRADEMARKS

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

E2CMOSTM

FACT™

FACT Quiet Series™

FAST

FASTr™

GTO™

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

VCX™

HiSeC™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench

QFET™

QS™

Quiet Series™

SuperSOT™-3

SuperSOT™-6



Rev. E

