Issue 4 - May 2006 1 www.zetex.com
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BSP75G
60V self-protected low-side IntelliFET
TM
MOSFET switch
Summary
Continuous drain source voltage VDS=60V
On-state resistance 550m⍀
Nominal load current 1.4A (VIN = 5V)
Clamping energy 550mJ
Ordering information
Device marking
BSP75G
Description
Self-protected low side MOSFET. Monolithic over temperature, over
current, over voltage (active clamp) and ESD protected logic level
power MOSFET intended as a general purpose switch.
Features
• Short circuit protection with auto restart
• Over-voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input protection (ESD)
• High continuous current rating
• Load dump protection (actively protects load)
• Logic level input
Note:
The tab is connected to the drain pin, and must
be electrically isolated from the source pin.
Connection of significant copper to the tab is
recommended for best thermal performance.
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
BSP75GTA 7 12mm embossed 1,000
BSP75GTC 13 12mm embossed 4,000
SOT223
D
S
D
IN
BSP75G
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© Zetex Semiconductors plc 2006
Functional block diagram
Applications
• Especially suited for loads with a high in-rush current such as lamps and motors.
• All types of resistive, inductive and capacitive loads in switching applications.
•␮C compatible power switch for 12V and 24V DC applications.
• Automotive rated.
• Replaces electromechanical relays and discrete circuits.
• Linear mode capability - the current-limiting protection circuitry is designed to de-activate at
low Vds, in order not to compromise the load current during normal operation. The design
maximum DC operating current is therefore determined by the thermal capability of the
package/board combination, rather than by the protection circuitry.
S
Over voltage
protection
Over current
protection
Over temperature
protection
Logic
Human body
ESD protection
D
IN dV/dt
limitation
BSP75G
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Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 37mm x 37mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(b) For a device surface mounted on FR4 board and measured at t<=10s.
(c) For a device mounted on FR4 board with the minimum copper required for electrical connections.
Parameter Symbol Limit Unit
Continuous drain-source voltage VDS 60 V
Drain-source voltage for short circuit protection VDS(SC) 36 V
Continuous input voltage VIN -0.2 ... +10 V
Peak input voltage VIN -0.2 ... +20 V
Operating temperature range Tj, -40 to +150 °C
Storage temperature range Tstg -55 to +150 °C
Power dissipation at TA =25°C(a) PD2.5 W
Continuous drain current @ VIN=10V; TA=25°C(a) ID1.6 A
Continuous drain current @ VIN=5V; TA=25°C(a) ID1.4 A
Pulsed drain current @ VIN=10V IDM 5A
Continuous source current (body diode)(a) IS3A
Pulsed source current (body diode) IS5A
Unclamped single pulse inductive energy EAS 550 mJ
Load dump protection VLoadDump 80 V
Electrostatic discharge (human body model) VESD 4000 V
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 40/150/56
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient(a) R⍜JA 50 °C/W
Junction to ambient(b) R⍜JA 24 °C/W
Junction to ambient(c) R⍜JA 208 °C/W
BSP75G
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Characteristics
BSP75G
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Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static characteristics
Drain-source clamp voltage VDS(AZ) 60 70 75 V ID=10mA
Off-state drain current IDSS 0.1 3 ␮AVDS=12V, VIN=0V
Off-state drain current IDSS 315␮AVDS=32V, VIN=0V
Input threshold voltage (*)
NOTES:
(*) Protection features may operate outside spec for VIN<4.5V.
VIN(th) 12.1 VV
DS=VGS, ID=1mA
Input current IIN 0.7 1.2 mA VIN=+5V
Input current IIN 1.5 2.7 mA VIN=+7V
Input current IIN 47mAV
IN=+10V
Static drain-source on-state
resistance
RDS(on) 520 675 m⍀VIN=+5V, ID=0.7A
Static drain-source on-state
resistance
RDS(on) 385 550 m⍀VIN=+10V, ID=0.7A
Current limit (†)
(†) The drain current is limited to a reduced value when VDS exceeds a safe level.
ID(LIM) 0.7 1.1 1.75 A VIN=+5V, VDS>5V
Current limit(†) ID(LIM) 234AV
IN=+10V, VDS>5V
Dynamic characteristics
Turn-on time (VIN to 90% ID)t
on 2.2 10 ␮sR
L=22⍀, VDD=12V,
VIN=0 to +10V
Turn-off time (VIN to 90% ID)t
off 13 20 ␮sR
L=22⍀, VDD=12V,
VIN=+10V to 0V
Slew rate on (70 to 50% VDD)-dVDS/dton 10 20 V/␮sR
L=22⍀, VDD=12V,
VIN=0 to +10V
Slew rate off (50 to 70% VDD)dV
DS/dtoff 3.2 10 V/␮sRL=22⍀, VDD=12V,
VIN=+10V to 0V
Protection functions (‡)
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
Required input voltage for
over temperature protection
VPROT 4.5 V
Thermal overload trip
temperature
TJT 150 175 °C
Thermal hysteresis 10 °C
Unclamped single pulse
inductive energy Tj=25°C
EAS 550 mJ ID(ISO)=0.7A, VDD=32V
Unclamped single pulse
inductive energy Tj=150°C
EAS 200 mJ ID(ISO)=0.7A, VDD=32V
Inverse diode
Source drain voltage VSD 1V
IN=0V, -ID=1.4A
BSP75G
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© Zetex Semiconductors plc 2006
Characteristics
BSP75G
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© Zetex Semiconductors plc 2006
Intentionally left blank
BSP75G
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© Zetex Semiconductors plc 2006
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The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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Package outline - SOT223
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Min. Max.
A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC
A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
D 6.30 6.70 0.248 0.264 - - - - -