SCH2602
No.8323-1/6
Features
•The SCH2602 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON- resistance
and high-speed switching, thereby enabling high-density mounting.
•Low ON-resistance.
•2.5V drive (N-ch), 1.8V drive (P-ch).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions N-channel P-channel Unit
Drain-to-Source Voltage VDSS 30 --12 V
Gate-to-Source Voltage VGSS ±10 ±10 V
Drain Current (DC) ID0.35 --1.5 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 1.4 --6 A
Allowable Power Dissipation PD
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
[N-channel]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 10 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V
Forward T ransfer Admittance yfsVDS=10V, ID=80mA 130 220 mS
RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω
Static Drain-to-Source On-State Resistance RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω
RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ω
Marking : FB Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8323
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
62005PE MS IM TA-100972
SCH2602 N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
SCH2602
No.8323-2/6
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=10V, f=1MHz 7.0 pF
Output Capacitance Coss VDS=10V, f=1MHz 5.9 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 2.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns
Rise T ime trSee specified Test Circuit. 65 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 155 ns
Fall T ime tfSee specified Test Circuit. 120 ns
Total Gate Charge Qg VDS=10V, VGS=4V, ID=150mA 1.58 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=150mA 0.26 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=150mA 0.31 nC
Diode Forward Voltage VSD IS=150mA, VGS=0V 0.87 1.2 V
[P-channel]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --12 V
Zero-Gate Voltage Drain Current IDSS VDS=--12V, VGS=0V --10 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=--6V, ID=--1mA --0.3 --1.0 V
Forward T ransfer Admittance yfsVDS=--6V, ID=--0.8A 1.1 1.8 S
RDS(on)1 ID=--0.8A, VGS=--4.5V 235 310 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--0.4A, VGS=--2.5V 335 470 mΩ
RDS(on)3 ID=--0.1A, VGS=--1.8V 445 670 mΩ
RDS(on)4 ID=--50mA, VGS=--1.5V 750 1250 mΩ
Input Capacitance Ciss VDS=--6V, f=1MHz 160 pF
Output Capacitance Coss VDS=--6V, f=1MHz 45 pF
Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz 35 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns
Rise T ime trSee specified Test Circuit. 45 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 29 ns
Fall T ime tfSee specified Test Circuit. 30 ns
Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--1.5A 2.6 nC
Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--1.5A 0.25 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--1.5A 0.65 nC
Diode Forward Voltage VSD IS=--1.5A, VGS=0V --0.92 --1.5 V
Package Dimensions Electrical Connection
unit : mm
7028-007
654
123
1 : Source1
2 : Gate2
3 : Source2
4 : Gate1 / Drain2
5 : Drain1
6 : Drain1
Top view
1 : Source1
2 : Gate2
3 : Source2
4 : Gate1 / Drain2
5 : Drain1
6 : Drain1
SANYO : SCH6
1.6
1.6
1.5
0.05
0.5
0.05
0.56
0.25
0.2 0.2
13
2
645
SCH2602
No.8323-3/6
Switching Time Test Circuit
[N-channel] [P-channel]
PW=10µs
D.C.≤1%
4V
0V
VIN
VIN
P.G 50Ω
G
S
ID=80mA
RL=187.5Ω
VDD=15V
VOUT
D
SCH2602
PW=10µs
D.C.≤1%
0V
--4.5V
VIN
VIN
P.G 50Ω
G
S
ID= --0.8A
RL=7.5Ω
VDD= --6V
VOUT
D
SCH2602
0
0
0.02
0.2
0.06
0.04
0.08
0.4
0.10
0.12
0.14
0.16
0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
VGS=1.5V
2.0V
2.5V
4.0V
3.5V
3.0V
6.0V
0
012
1
34
2
56
3
4
5
6
7
8
9
10
78910
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS Ta=25°C
0.01 0.1
23 57 23 5
10
7
5
3
2
1.0
Drain Current, ID -- A
RDS(on) -- ID
0
00.5 1.0 1.5 2.0
0.15
0.10
0.05
0.30
0.25
0.20
2.5 3.0
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
ID -- VGS
VDS=10V
Ta= --25°C
Ta=75°C
25°C
25°C
--25°C
75°C
25°C
--25°C
Ta=75°C
IT00029 IT00030
IT00031 IT00032
VGS=4V
ID=40mA
80mA
[Nch]
[Nch]
[Nch]
[Nch]
0.01 0.1
23 57 23 5
10
1.0
7
5
3
2
Drain Current, ID -- A
RDS(on) -- IDVGS=2.5V
1.0
0.001 0.01
23 57 23 5
100
10
7
5
3
2
7
5
3
2
Drain Current, ID -- A
RDS(on) -- IDVGS=1.5V
Ta=75°C
25°C
--25°C
--25°C
25°C
Ta=75°C
IT00033 IT00034
[Nch]
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
SCH2602
No.8323-4/6
0.01 0.60.5 0.80.7 0.9 1.0 1.1 1.2
0.1
1.0
7
5
3
2
7
5
3
2
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
VGS=0V
IS -- VSD
--25°C
25°C
Ta=75°C
02468101214161820
1.0
10
7
5
3
2
7
5
3
2
100
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Ciss
Coss
Crss
f=1MHz
Ciss, Coss, Crss -- VDS
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
1
2
3
4
5
6
7
8
9
10
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
VDS=10V
ID=150mA
0.01
10 0.1
23 57 2
1000
100
7
5
3
2
7
5
3
2
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
VDD=15V
VGS=4V
td(on)
tr
tf
td(off)
IT00037 IT00038
IT00039 IT00040
[Nch]
[Nch]
[Nch]
[Nch]
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
IT03292
[Nch]
2
3
2
3
5
7
2
3
5
7
1.0
0.1
0.01 23 57 23 5
1.0 10
ID=0.35A
IDP=1.4A
100ms
DC operation
10ms
1ms
<10µs
Operation in
this area is
limited by RDS(on).
Operation in
this area is
limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
✕0.8mm) 1unit
--60
0--40 --20
1
020
2
40 60
3
4
5
6
7
80 100 120 140 160
Ambient Temperature, Ta -- °C
RDS(on) -- Ta
ID=40mA, VGS=2.5V
ID=80mA, VGS=4.0V
0.01
0.01 0.1
23 57 23 5
0.1
7
5
3
2
7
5
3
2
1.0
Drain Current, ID -- A
VDS=10V
y
fs -- ID
75
°C
Ta= --25
°
C
IT00035 IT00036
25°C
[Nch]
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Forward T ransfer Admittance,
y
fs -- S
SCH2602
No.8323-5/6
--60 --40 --20 0 20 40 60 80 100 120 140 160
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
IT04355
200
100
400
600
300
500
700
800
0
Ambient Temperature, Ta -- °C
RDS(on) -- Ta
IT04356
0 --1 --2 --3 --4 --5 --6 --7 --8
200
400
600
800
100
300
500
700
0
Ta=25°C
--0.8A
ID= --0.4A
ID= --0.1A, VGS= --1.8V
ID= --0.4A, VGS= --2.5V
ID= --0.8A, VGS= --4.5V
[Pch]
[Pch]
[Pch]
[Pch]
[Pch]
[Pch]
0 --2 --4 --6 --8 --10 --12
100
10
7
5
3
2
5
3
2
--0.1 23 5 237
--1.0
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
IT04359
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
IT04357
--0.01 23 57
--0.1 23 2357
--1.0
0.1
1.0
7
5
3
2
5
3
2
100
10
7
5
3
2
7
5
3
2
3
2
y
fs -- ID
IT04358
--0.4 --0.6 --0.8 --1.0 --1.2 --1.4
--0.1
--1.0
7
5
3
2
5
3
2
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
IS -- VSD
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
IT04360
25
°
C
Ta= --25°C
VDS= --6V VGS=0V
--25
°
C
25°C
Ta=75
°
C
f=1MHz
Ciss
Coss
Crss
VDD= --6V
VGS= --4.5V
td(on)
td(off)
tr
tf
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Forward T ransfer Admittance,
y
fs -- S
75
°
C
[Pch]
[Pch]
0 --0.1
--0.3
--0.6
--0.9
--1.2
--1.5
0
--0.5
--1.0
--1.5
--2.0
0
--0.2 --0.3 --0.4 --0.5
Drain-to-Source Voltage, VDS -- V
ID -- VDS
IT04353
0 --0.5 --1.0 --1.5 --2.0 --3.0--2.5
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
IT04354
VGS= --1.0V
--1.5V
--2.5V
--1.8V
--4.5V
--3.0V
--3.5V
VDS= --6V
25°C
--25°C
Ta=75°C
25°C
75°C
Ta= --25°C
Drain Current, ID -- A
SCH2602
No.8323-6/6
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT03293
[Nch, Pch]
0
020 40
0.2
0.4
0.6
0.8
1.0
60 80 100 120 140 160
Mounted on a ceramic board (900mm
2
✕0.8mm) 1unit
[Pch]
[Pch]
--10--1.0--0.1 23 57 2 2357
0 0.5 1.0 1.5 2.0 2.5 3.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
IT04361
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
2
3
5
7
2
3
5
7
2
3
5
7
--10
--1.0
--0.1
--0.01
IT04362
VDS= --6V
ID= --1.5A
IDP= --6.0A
ID= --1.5A
Operation in this
area is limited by RDS(on).
100ms
DC operation
1ms
10ms
<10µs
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
✕0.8mm) 1unit
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
Note on usage : Since the SCH2602 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
