Nort h Am erica: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 86 9 595, Fax+44 (134 4) 30 0 020
Specifications subject to change without notice.
Visit ww w. macom.com for ad ditional data shee ts an d pr o d uct inf or m ati o n.
V 4.0
Package Outlines
Features
Low I R (<100nA @ 1V, <500nA @ 3V)
Designed for High Volume, Low Cost Detector and Mixer
Applications
Low Noise Figure: 5.7 dB (SSB) at X-Band
High Detector Sensitivity: -55 dBm TSS
Low Capacitance: 0.30 pF
Low 1/F Noise
Single, Series Pair, and Unconnected Pair Configuration s
Available in four package styles
Tape and Reel
Description
The MA4E2054 series are low barrier n-type silicon Schottky
diodes assembled in low cost surface mount plastic packages.
They are designed for use as high performance mixer and
detector diodes at frequencies from VHF through low Ku band.
The MA4E2054-1141T (SOD-323), and the MA4E2054A and
the MA4E2054C (available in both the SOT-23 and SOT-323
packages) are single element Schottky diodes characterized for
use as single ended mixers and detectors. The MA4E2054B and
MA4E2054D (available in both the SOT-23 and SOT-323
packages) incorporate two Schottky chips in series pair
configurations. The MA4E2054E-1068T consists of two
Schottky chips in the SOT-143 package in an unconnected pair
configuration. These diodes are useful for balanced mixer and
detector voltage doubler circuits. Applications for the
MA4E2054 series include VSAT and DBS mixers. The small
diode package size and low cost make them attractive fo r use in
RF tag applications for id entification and toll collection.
The part number consists of the base chip (MA4E2054),
followed by the wiring configuration (A, B, C, D, E, omit for
SOD-323), the package style (287, 1068, 1141, 1146) and a “T”
for tape and reel.
The MA4E2054-1141T is available only in the SOD-323
package style. The MA4E2054A , B, C, D are available in both
the SOT-23 and SOT-323 package styles. The MA4E2054E is
available only in the SOT-143 package style.
SOT-23 (287) SOT-143 (1068)
SOT-323 (1146) SOD-323 (1141)
Configurations
TOP VIEW
3
12
3
12
3
12
3
12
12
4
12
3
SINGLE
MA4E2054A-287T
MA4E2054A-1146T
SINGLE
MA4E2054C-287T
MA4E2054C-1146T
SINGLE
MA4E2054-1141T UNCONNECTED PAIR
MA4E2054E-1068T
SERIES PAIR
MA4E2054B-287T
MA4E2054B-1146T
SERIES PAIR
MA4E2054D-287T
MA4E2054D-1146T
MA4E2054 Series
Surface Mount Low Barrier
X-Band Schottky Diode
1
Nort h Am erica: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 86 9 595, Fax+44 (134 4) 30 0 020
Specifications subject to change without notice.
Visit ww w. macom.com for ad ditional data shee ts an d pr o d uct inf or m ati o n.
V 4.0
Maximum Ratings
Parameter Unit Values
Operating Temperature ºC -65 to +125
Storage Temperature ºC -65 to +125
Incident RF Power (CW) mW 751
Reverse Voltage @ 25ºC V 3
Forward Current mA 20
Soldering Temperature ºC +260 for 5 sec.
1. At 25°C juncti on temperature. Derate l i nearl y to zero watts at 125°C case tem perature.
Electrical Specifications @ +25°C
Parameter Condition Symbol Specification
Breakdown Voltage IR = 10 mA VB 3.0 V min.
Reverse Leakage Current VR = 1 V IR 100 nA max.
Reverse Leakage Current VR = 3 V IR 500 nA max.
Total Capacitance VR = 0 V CT 0.30 pF max.
Dynamic Resistance2 IF = 10 mA RD 17 Oh ms max.
Forward Voltage IF = 1 mA VF 250 mV min.
Forward Voltage Difference1 IF = 1 mA VF 20 mV max.
1. Applies to MA4E2054B, MA4E2054D and MA4E 2054E c onfigurations.
2. RD = RS + RJ where RJ =
26
IF (in mA)
Typical RF Performance @ +25°C
Parameter Conditions Typical Value
Mixer Noise Figure1 f = 9.375 GHz 5.7 dB (SSB)
IF Impedance IF = 30 MHz 200 ohms
Tangential Signal
Sensitivity2 IF = 20 mA
BW = 2 MHz -55 dBm
Detector Output
Voltage at -30 dBm2 RL = 100K Ohms
IF = 20 µA 20 mV
Detector Output RL = 1M Ohm 20 mV
1. Fixture tuned to 9.375 GHz.
2. Fixture tuned to 2.5 GHz. See figures on page 3 for untuned fixture performance.
IS = 3 x 10-8 A M = 0.50
RS = 11 EG = 0.69 eV
N = 1.05 BV = 5.0 V
TT = 0 S IBV = 1 x 10 -5 A
Cj(0) = 0.10 x 10 -12 pF
Cpar = 0.11 x 10 -12 pF
VJ = 0.40 V
Spice Model Parameters
2
Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series
Nort h Am erica: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 86 9 595, Fax+44 (134 4) 30 0 020
Specifications subject to change without notice.
Visit ww w. macom.com for ad ditional data shee ts an d pr o d uct inf or m ati o n.
V 4.0
Circuit Models
SOT-23 SOT-143
.65 nH
.65 nH
.7 nH
.05 pf
.01 pf
.13 pf
.13 pf .01 pf
.05 pf
.013 pf .015 pf
1
2
3
C1
C1C1C1C1
Cp1
C1C1
Cp2
Cp3
Cp4
1
2
4
3
7
LBW 6
85
LBW
Lg
MM
L1L1
L1
SOT-323 SOD-323
LBW = 0.08nH, Lg = 0.36nh, L1 = 0.31nH, M = 0.12nH, C1 = 0.01pF,
Cp1 = 0.05pF, CP2 = 0.10pF, Cp3 = 0.05pF, Cp4 = 0.03pF
.6 nH
.6 nH
.6 nH
.05 pf
.06 pf
.04 pf
.04 pf .06 pf
.05 pf
.06 pf .04 pf
1
2
3
.47 nH
.05 pf
.02 pf
.2 p f
.47 nH
.02 pf .2 pf
12
Typical Performance Curves @ 25°C (MA4E2054-287T)
0.1
1
10
024681012
FREQUENCY (GHz)
V
OUT
(mV)
- - - - - - 1M o hm
________ 100k ohms
__ __ __ 10k ohms
__ . . __ . . 5 k ohms
0.01
0.1
1
10
100
1000
10000
-50 -40 -30 -20 -10 0 10 20
INPUT PO W ER (dBm)
V
OUT
(mV)
- - - - - - 10 k ohms
________ 1M ohm
__ __ __ 5k ohms
Detector Output Voltage vs Frequency and
Load Resistance at -30 dBm. Diode Forward
Biased at 20 µ
µµ
µA. Untuned Fixture (50
)
Detector Output Voltage vs Input Power and
Load Resistance. Diode Forward Biased at
20µ
µµ
µA. Untuned Fixture at 9.375 GHz
3
Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series
Nort h Am erica: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 86 9 595, Fax+44 (134 4) 30 0 020
Specifications subject to change without notice.
Visit ww w. macom.com for ad ditional data shee ts an d pr o d uct inf or m ati o n.
V 4.0
3
4
5
6
7
8
9
0.01 0.1 1 10
LO PO WER (mW )
NOISE FIGURE (dB)
0.01
0.1
1
10
0 50 100 150 200 250 300 350 400 450 500
VF (m V )
I
F
(mA)
+125oC
25oC-50oC
Typical Performance Curves @ 25°C (Cont’d) (MA4E2054-287T)
Forward Current vs Forward Voltage
and Temperature Tuned Fixture
Typical Scattering Parameters (S11)
MA4E2054A (packaged in SOT-23), Using a 50 Ohm Intercontinental Test Fixture (no DC bias)
Freq. -30 dBm -3 dBm 0 dBm
GHz MAG PHASE MAG PHASE MAG PHASE MAG PHASE
0.50 0.993 -7.6 0.812 -7.0 0.597 -4.6 0.387 -0.9
1.00 0.994 -15.1 0.843 -14.7 0.632 -13.9 0.411 -11.3
1.50 0.993 -21.4 0.807 -21.7 0.596 -22.3 0.386 -22.4
2.00 0.997 -27.1 0.791 -26.0 0.580 -23.1 0.383 -16.4
2.50 0.994 -33.2 0.795 -31.5 0.579 -27.6 0.378 -18.5
3.00 0.994 -41.3 0.755 -42.7 0.548 -45.2 0.342 -48.6
3.50 0.992 -48.6 0.727 -52.2 0.524 -55.8 0.318 -60.8
4.00 0.997 -56.5 0.713 -58.9 0.502 -59.5 0.296 -56.3
4.50 0.987 -66.4 0.696 -67.1 0.464 -67.7 0.235 -62.6
5.00 0.971 -74.7 0.634 -79.8 0.386 -86.2 0.167 -94.9
5.50 0.965 -83.1 0.614 -88.6 0.354 -91.4 0.131 -98.7
6.00 0.980 -96.0 0.547 -103.5 0.292 -107.0 0.072 -117.2
6.50 0.974 -110.3 0.514 -120.1 0.248 -129.5 0.041 163.9
7.00 0.941 -123.7 0.450 -137.4 0.235 -150.8 0.070 145.2
7.50 0.957 -138.9 0.430 -158.1 0.247 178.0 0.152 120.6
8.00 0.969 -155.6 0.404 -178.8 0.260 150.1 0.218 102.5
8.50 0.933 -171.5 0.405 162.2 0.294 129.9 0.278 92.0
9.00 0.932 170.9 0.391 143.1 0.310 110.8 0.344 84.4
9.50 0.943 152.8 0.410 128.2 0.318 97.9 0.343 68.7
10.00 0.931 132.2 0.504 108.9 0.394 83.3 0.399 56.9
3 dBm
0.01
0.1
1
10
100
1000
10000
-40 -30 -20 -10 0 10
INPUT POW E R (dBm )
V
OUT
(mV)
- - - - - - 1 M oh m
________ 100k ohms
__ __ __ 1 0k oh ms
__ . . _ _ . . 5k ohms
0.01
0.1
1
10
024681012
FREQUENCY (GHz)
V
OUT
(mV)
- - - - - - 1M oh m ________ 100k ohms
__ __ __ 10k ohms
__ . . __ . . 5k ohms
Detector Output Voltage vs Frequency and
Load Resistance at -30 dBm. Diode at Zero
Bias. Untuned Fixture (50
)
Detector Output Voltage vs Input Power and
Load Resistance. Diode at Zero Bias. Untuned
Fixture at 9.375 GHz (50
)
4
Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series
Nort h Am erica: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 86 9 595, Fax+44 (134 4) 30 0 020
Specifications subject to change without notice.
Visit ww w. macom.com for ad ditional data shee ts an d pr o d uct inf or m ati o n.
V 4.0
Impedance Plot
MA4E2054A (packaged in SOT-23)
Using a 50 Ohm Intercontinental Test Fixture (no DC bias)
-30 dBm
-3 dBm
0 dBm
+3 dBm
Fstart=0.5 GHz
Fstop=12.5 GHz
Case Styles
SOT-23 SOT-23 (Case 287)
F
D
H
J
A
G
L
C
E
B
K
N
M
INCHES MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.048 1.22
B 0.008 0.20
C 0.040 1.00
D 0.013 0.020 0.35 0.50
E 0.003 0.006 0.08 0.15
F 0.110 0.119 2.80 3.00
G 0.047 0.056 1.20 1.40
H 0.037 typical 0.95 typical
J 0.075 ty pic al
K 0.103 2.60
L 0.024 0.60
1.90 typical
DIM. GRADIENT
M 10° max.1 Note:
N 2° . . .30° 1. Applicable on all sides
5
Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series
Nort h Am erica: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 86 9 595, Fax+44 (134 4) 30 0 020
Specifications subject to change without notice.
Visit ww w. macom.com for ad ditional data shee ts an d pr o d uct inf or m ati o n.
V 4.0
Case Styles
SOT-143 SOT-143 (Case 1068)
INCHES MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.044 1.10
B 0.044 1.10
C 0.040 1.00
D 0.030 0.035 0.75 0.90
E 0.013 0.020 0.35 0.50
F 0.003 0.006 0.08 0.15
G 0.110 0.119 2.80 3.00
H 0.047 0.056 1.20 1.40
J 0.075 typical 1.90 typical
K 0.075 typical
L 0.103 2.6
M 0.024 0.6
1.90 typical
DIM. GRADIENT
N 10° max.1 Note:
P 2° . . .30° 1. Applicabl e on all sides
G
J
E
K
A
H
M
C
F
B
L
P
N
D
SOT-323 SOT-323 (Case 1146)
INCHES
DIM. MIN. MAX. MIN. MAX.
A 0.063 0.087 1.6 2.2
B 0.045 0.053 1.15 1.35
C 0.079 0.087 2.0 2.2
D 0.047 0.055 1.2 1.4
E 0.008 0.016 0.2 0.4
F 0.031 0.039 0.8 1.0
G 0.004 0.1
H 0.003 0.006 0.08 0.15
J 0.004 0.010 0.1 0.25
MILLIMETERS
A
E
D
J
H
G
F
10°MAX.
CB
SOD-323 SOD-323 (Case 1141)
INCHES
DIM. MIN. MAX. MIN. MAX.
A 0.043 1.1
B 0.004 0.1
C 0.008 0.2
D 0.010 0.016 0.25 0.4
E 0.003 0.006 0.08 0.15
F 0.063 0.075 1.6 1.9
G 0.045 0.057 1.15 1.45
H 0.091 0.106 2.3 2.7
MILLIMETERS
F
D
H
G
CE
A
B
6
Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series
Nort h Am erica: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 86 9 595, Fax+44 (134 4) 30 0 020
Specifications subject to change without notice.
Visit ww w. macom.com for ad ditional data shee ts an d pr o d uct inf or m ati o n.
V 4.0
Features
Low I R (<100 nA @ 1V, <500 nA @ 3V)
Designed for High Volume, Low Cost Detector and Mixer
Applications
Low Noise Figure: 5.7 dB (SSB) at X-Band
High Detector Sensitivity: -55 dBm TSS
Low Capacitance: 0.13 pF
Low 1/F Noise
Description
The MA4E2054 diode is a low barrier, n-type, silicon Schottky
device. It is useful as a high performance mixer or detector
diode at frequencies from VHF through X-band. The 0.004-
inch diameter gold bond pads and sturdy construction allow yo u
to use these chips in automatic assembly processes.
Package Outlines
MA4E2054
Typ.
0.014”
0.36
Typ.
0.014”
Typ.
0.014”
0.10
inches
mm
Parameter Symbol Unit Values
Operating Temperature TOP ºC -65 to
Storage Temperature TSTG ºC -65 to
Incident RF Power (CW) PT mW 751
Reverse Voltage @ 25ºC VR V 3
Forward Current @ 25°C IF mA 20
Maximum Ratings
1. At 25°C die temperature. Derat e linearly to zero watts at 150°C.
Electrical Specifications @ +25°C Typical RF Performance @ +25°C
SOT-23 Package
Parameter Condition Symbol Specification
Breakdown Voltage IR = 10 µA VB 3.0 V min.
Reverse Leakage
Current VR = 1 V IR 100 nA max.
Reverse Leakage
Current VR = 3 V IR 500 nA max.
To tal Capacitance VR = 0
f = 1 MHz CT 0.13 pF max.
Dynamic
Resistance1 IF = 10 mA RD 17 Ohms max.
Forward Voltage IF = 1 mA VF 250 mV min.
350 mV max.
1. RD = RS + RJ where RJ = 26
IF (in mA)
Parameter Conditions Typical Value
Mixer Noise Figure1 f = 9.375 GHz
LO = 0 dBm 5.7 dB (SSB)
IF Impedance IF = 30 MHz 200 ohms
Tangential Signal
Sensitivity2 IF = 20 µA
BW = 2 MHz
Video NF = 1.5 dB
-55 dBm
Detector Output
Voltage at -30 dBm2 RL = 100K Ohms
IF = 20 µA 20 mV
Detector Output
Voltage at -30 dBm2 RL = 1M Ohm
Zero Bias 20 mV
7
MA4E2054 Series
Low Barrier Schottky
Single Junction Chip
Nort h Am erica: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 86 9 595, Fax+44 (134 4) 30 0 020
Specifications subject to change without notice.
Visit ww w. macom.com for ad ditional data shee ts an d pr o d uct inf or m ati o n.
V 4.0
Circuit Model (Chip) Spice Model Parameters
0.06 pF
11
RJ
0.04 pF
RS
IS = 3 x 10-8 A M = 0.50
RS = 11 EG = 0.69 eV
N = 1.05 BV = 5.0 V
TT = 0 S IBV = 1 x 10 -5 A
Cj(0) = 0.10 x 10 -12 pF
VJ = 0.40 V
Recommended Assembly
1. One mil diameter gold wire.
2. Ball bond
3. Conductive silver epoxy for die mounting.
Typical Performance Curves @ +25°C
(Packaged in SOT-23)
0.01
0.1
1
10
0 50 100 150 200 250 300 350 400 450 500
VF (m V)
I
F
(mA)
+125oC
25oC-50oC
Forward Current vs Forward Voltage
and Temperature
0.01
0.1
1
10
100
1000
10000
-50 -40 -30 -20 -10 0 10 20
INPUT PO W ER (dBm)
V
OUT
(mV)
- - - - - - 10 k ohms
________ 1M ohm
__ __ __ 5k ohms
Detector Output Voltage vs Input Power and
Load Resistance. Diode Forward Biased at
20µA. Untuned Fixture at 9.375 GHz
3
4
5
6
7
8
9
0.01 0.1 1 10
LO PO W ER (mW)
NOISE FIG URE ( dB)
Noise Figure vs LO Power at 9.375 GHz,
Tuned Fixture
0.01
0.1
1
10
100
1000
10000
-40 -30 -20 -10 0 10
INPUT PO W ER (dBm)
V
OUT
(mV)
- - - - - - 1M o h m
________ 100k ohms
__ __ __ 10k ohms
__ . . __ . . 5k ohms
Detector Output Voltage vs Input Power and
Load Resistance. Diode at Zero Bias.
Untuned Fixture at 9.375 GHz
8
Low Barrier Sc hot tky Single Ju nction C hip MA4E2054 Series