MBR2070CT thru 20100CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
IEC 61000-4-2, level 4 (ESD), >15KV (air)
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
MBR2070CT
70
49
70
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak
Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
150
T
J
Operating Temperature Range
-55 to +150 ℃
T
STG
Storage Temperature Range
-55 to +175 ℃
Typical Thermal Resistance (Note 2)
R
0JC
2.0
/W
℃
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
V
F
V
Voltage Rate of Change (Rated VR)
dv/dt 10000
I
R
@T
J
=125 ℃
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 ℃0.01
10
mA
T
C
=120 ℃
Maximum Forward
Voltage (Note 1)
T
J
=125 ℃
T
J
=25 ℃
I
F
=10A @
I
F
=10A @
I
F
=20A @
I
F
=20A @
T
J
=125 ℃
T
J
=25 ℃
MBR2080CT
80
56
80
MBR2090CT
90
63
90
MBR20100CT
100
70
100
V/us
0.75
0.85
0.85
0.95
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.40 15.20
10.67
9.65
2.54 3.43
6.86 5.84
8.26 9.28
- 4.20
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.64 0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1 32
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 70 to 100 Volts
FORWARD CURRENT - 20 Amperes
Typical Junction Capacitance per element (Note
3)
C
J
250
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V
DC.
pF
SEMICONDUCTOR
LITE-ON
REV. 14, Jul-2012, KTHC09
O
O 1.70
1.14
@IR
=100uA
@IR
=100uA
@IR
=100uA