1. Product profile
1.1 General description
NPN general-purp ose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
1.2 Features
Low current (max . 1 00 mA)
Low voltage (max. 30 V)
Matched pairs
1.3 Applications
Applications with working point independent of temperature
Current mirrors
2. Pinning information
BCV61
NPN general-purpose double transistors
Rev. 04 — 18 December 2009 Product data sheet
Table 1. Product overview
Type number Package PNP complement
NXP JEITA
BCV61 SOT143B - BCV62
BCV61A BCV62A
BCV61B BCV62B
BCV61C BCV62C
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 collector TR2;
base TR1 and TR2
2 collector TR1
3emitterTR1
4emitterTR2 21
34
006aaa84
2
12
4
TR2 TR1
3
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 2 of 13
NXP Semiconductors BCV61
NPN general-purpose double transistors
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
Table 3. Ordering information
Type number Package
Name Description Version
BCV61 - plastic surface-mounted package; 4 leads SOT143B
BCV61A
BCV61B
BCV61C
Table 4. Marking codes
Type number Marking code[1]
BCV61 1M*
BCV61A 1J*
BCV61B 1K*
BCV61C 1L*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transis tor
VCBO collector-base voltage open emitter - 30 V
VCEO collector-emitter voltage open base - 30 V
VEBS emitter-b a s e vo ltage VCE =0V - 6 V
ICcollector current - 100 mA
ICM peak collector current - 200 mA
IBM peak base current - 200 mA
Per device
Ptot total power dissipation Tamb ≤25 °C[1] -250mW
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 3 of 13
NXP Semiconductors BCV61
NPN general-purpose double transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 6. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction
to ambient in free air [1] - - 500 K/W
Table 7. Characteristics
Tj=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Transistor TR1
ICBO collector-base cut-off current VCB =30V;
IE=0A --15nA
VCB =30V;
IE=0A;
Tj= 150 °C
--5μA
IEBO emitter-base cut-off current VEB =5V;
IC=0A - - 100 nA
hFE DC current gain VCE =5V;
IC= 100 μA100 - -
VCE =5V;
IC=2mA 110 - 800
VCEsat collector-emitter saturation
voltage IC=10mA;
IB=0.5mA - 90 250 mV
IC= 100 mA;
IB=5mA - 200 600 mV
VBEsat base-emitter saturation voltage IC=10mA;
IB=0.5mA [1] - 700 - mV
IC= 100 mA;
IB=5mA [1] - 900 - mV
VBE base-emitter voltage IC=2mA;
VCE =5V [2] 580 660 700 mV
IC=10mA;
VCE =5V [2] - - 770 mV
fTtransition frequency VCE =5V;
IC=10mA;
f = 100 MHz
100 - - MHz
Cccollector capacitance VCB =10V;
IE=i
e=0A;
f=1MHz
-2.5-pF
NF noise figure VCE =5V;
IC= 200 μA;
RS=2kΩ;
f=1kHz;
B=200Hz
--10dB
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 4 of 13
NXP Semiconductors BCV61
NPN general-purpose double transistors
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] Device, without emitter resistors, mounted on an FR4 PCB.
Transistor TR2
VEBS emitter-base voltage VCB =0V;
IE=−250 mA --−1.8 V
VCB =0V;
IE=−10 μA−400--mV
hFE DC current gain VCE =5V;
IC=2mA
BCV61 110 - 800
BCV61A 110 - 220
BCV61B 200 - 450
BCV61C 420 - 800
Transistors TR1 and TR2
IC1/IE2 current matching IE2 =−0.5 mA;
VCE1 =5V
Tamb ≤25 °C 0.7 - 1.3
Tamb ≤150 °C 0.7 - 1.3
IE2 emitter current 2 VCE1 =5V [3] --−5mA
Table 7. Characteristics …continued
Tj=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 5 of 13
NXP Semiconductors BCV61
NPN general-purpose double transistors
VCE =5V
(1) Tamb = 150 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
VCE =5V
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 150 °C
Fig 1. BCV61A: DC current gain as a function of
collector current; typical values Fig 2. BCV61A: Base-emitter volt age as a function of
collector current; typical values
IC/IB=20
(1) Tamb = 150 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
IC/IB=10
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 150 °C
Fig 3. BCV61A: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 4. BCV61A: Base-emitter saturation voltage as a
function of collector current; typical values
mgt723
10
−1
11010
2
10
3
I
C
(mA)
0
400
300
200
100
h
FE
(1)
(2)
(3)
mgt724
10
−1
11010
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BE
(mV)
(1)
(2)
(3)
10
3
10
2
10
mgt725
10
−1
11010
2
10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)
(3)
mgt726
10
−1
11010
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BEsat
(mV)
(1)
(2)
(3)
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 6 of 13
NXP Semiconductors BCV61
NPN general-purpose double transistors
VCE =5V
(1) Tamb = 150 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
VCE =5V
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 150 °C
Fig 5. BCV61B: DC current gain as a function of
collector current; typical values Fig 6. BCV61B: Base-emitter volt age as a function of
collector current; typical values
IC/IB=20
(1) Tamb = 150 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
IC/IB=10
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 150 °C
Fig 7. BCV61B: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 8. BCV61B: Base-emitter saturation voltage as a
function of collector current; typical values
mgt727
10
−1
11010
2
10
3
I
C
(mA)
0
600
500
400
300
200
100
h
FE
(1)
(2)
(3)
0
1200
1000
800
600
400
200
mgt728
10
−2
10
−1
11010
2
10
3
I
C
(mA)
V
BE
(mV)
(1)
(2)
(3)
104
103
102
10
mgt729
10
−1
11010
2
10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)
(3)
mgt730
10
−1
11010
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BEsat
(mV)
(1)
(2)
(3)
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 7 of 13
NXP Semiconductors BCV61
NPN general-purpose double transistors
VCE =5V
(1) Tamb = 150 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
VCE =5V
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 150 °C
Fig 9. BCV61C: DC current gain as a function of
collector current; typical values Fig 10. BCV61C: Base-emitter volt age as a function of
collector current; typical values
IC/IB=20
(1) Tamb = 150 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
IC/IB=10
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 150 °C
Fig 11. BCV61C: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 12. BCV61C: Base-emitter saturation voltage as a
function of collector current; typical values
mgt731
10
−1
11010
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
h
FE
(1)
(2)
(3)
0
1200
1000
800
600
400
200
mgt732
10
−2
10
−1
11010
2
10
3
I
C
(mA)
V
BE
(mV)
(1)
(2)
(3)
10
4
10
3
10
2
10
mgt733
10
−1
11010
2
10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)(3)
mgt734
10
−1
11010
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BEsat
(mV)
(1)
(2)
(3)
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 8 of 13
NXP Semiconductors BCV61
NPN general-purpose double transistors
8. Test information
IC1/IE2 =1.3
Fig 13. Maximum collector-emitter voltage as a function of emitter resist ance
mbk082
0
30
10
20
10−11
VCE1max
(V)
10 RE (Ω)102
IE2 =
1 mA
5 mA
10 mA
50 mA
Fig 14. Test circuit current matching
Fig 15. BCV61 with emitter resistors
006aaa83
1
A
VCE1
IC1
TR2TR1 IE2 =
constant
12
43
006aab9
77
A
VCE1
IC1
TR2TR1 IE2 =
constan
t
12
43
RERE
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 9 of 13
NXP Semiconductors BCV61
NPN general-purpose double transistors
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 16. Package outline SOT143B
04-11-16Dimensions in mm
3.0
2.8 1.1
0.9
2.5
2.1
1.4
1.2
1.7
1.9
0.48
0.38
0.15
0.09
0.45
0.15
0.88
0.78
21
34
Table 8. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
BCV61 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235
BCV61A
BCV61B
BCV61C
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 10 of 13
NXP Semiconductors BCV61
NPN general-purpose double transistors
11. Soldering
Fig 17. Reflow soldering footprint SOT143B
Fig 18. Wave soldering footprint SOT143B
solder lands
solder resist
occupied area
solder paste
sot143b_
fr
0.9
0.60.7
3.25
3
0.6
(3×)
0.6
(3×)
0.5
(3×)
0.7
(3×)
1
1.9
2
0.75 0.95
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot143b_
fw
4.6
4.45
1.2
(3×)
1.425
(3×)
1.425
1
1.2
2.2
2.575
Dimensions in mm
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 11 of 13
NXP Semiconductors BCV61
NPN general-purpose double transistors
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BCV61_4 20091218 Product data sheet - BCV61_3
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate .
•Section 3 “Ordering information”: added
•Section 4 “Marking”: updated
•Figure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12: added
•Section 8 “Test information ”: added
•Figure 16: superseded by mini mized package outline drawing
•Section 10 “Packing information”: added
•Section 11 “Soldering”: added
•Section 13 “Legal information”: updated
BCV61_3 19990408 Product specification - BCV61_CNV_2
BCV61_CNV_2 19970616 Product specification - -
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 12 of 13
NXP Semiconductors BCV61
NPN general-purpose double transistors
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
13.3 Disclaimers
General — In formation in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give an y represent ations or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors product s are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ra tings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warr anty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or inte llectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objecti ve specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BCV61
NPN general-purpose double transistors
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 18 December 2009
Document identifier: BCV61_4
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Packing information . . . . . . . . . . . . . . . . . . . . . 9
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
