PD - 97050 IRF7823PbF HEXFET(R) Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems l Optimized for Control FET applications VDSS Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG RDS(on) max Qg 8.7m:@VGS = 10V 9.1nC 30V A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 30 V VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V 20 ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C 13 Continuous Drain Current, VGS @ 10V Pulsed Drain Current 100 Power Dissipation 2.5 f f 11 c PD @TA = 70C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A W 1.6 W/C C 0.02 -55 to + 150 Thermal Resistance Parameter RJL RJA g Junction-to-Ambient fg Junction-to-Drain Lead Typ. Max. Units --- 20 C/W --- 50 Notes through are on page 10 www.irf.com 1 10/06/05 IRF7823PbF Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 30 --- --- VDSS/TJ Breakdown Voltage Temp. Coefficient --- 0.024 --- V/C Reference to 25C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance --- 6.9 8.7 m --- 9.3 11.9 V VGS = 0V, ID = 250A VGS = 10V, ID = 13A VGS = 4.5V, ID = 10A VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V VGS(th) Gate Threshold Voltage Coefficient --- -5.1 --- mV/C IDSS Drain-to-Source Leakage Current A VDS = 24V, VGS = 0V nA VGS = 20V e e VDS = VGS, ID = 25A --- --- 1.0 --- --- 150 Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 Forward Transconductance 27 --- --- Total Gate Charge --- 9.1 14 Qgs1 Pre-Vth Gate-to-Source Charge --- 2.7 --- Qgs2 Post-Vth Gate-to-Source Charge --- 0.84 --- Qgd Gate-to-Drain Charge --- 3.2 --- ID = 10A Qgodr Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) --- 2.4 --- See Fig. 17 & 18 Qsw --- 4.0 --- Qoss Output Charge --- 5.8 --- nC Rg Gate Resistance --- 2.0 3.0 td(on) Turn-On Delay Time --- 7.2 --- VDD = 16V, VGS = 4.5V tr Rise Time --- 8.2 --- ID = 10A td(off) Turn-Off Delay Time --- 10 --- tf Fall Time --- 2.7 --- See Fig. 15 Ciss Input Capacitance --- 1110 --- VGS = 0V Coss Output Capacitance --- 240 --- Crss Reverse Transfer Capacitance --- 110 --- IGSS gfs Qg VDS = 24V, VGS = 0V, TJ = 125C VGS = -20V S VDS = 15V, ID = 10A VDS = 15V nC ns pF VGS = 4.5V VDS = 16V, VGS = 0V Clamped Inductive Load VDS = 15V = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. --- Max. 230 Units mJ --- 10 A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 3.1 ISM (Body Diode) Pulsed Source Current --- --- 100 VSD (Body Diode) Diode Forward Voltage --- --- 1.0 trr Reverse Recovery Time --- 7.8 12 ns Qrr Reverse Recovery Charge --- 9.0 14 nC ton Forward Turn-On Time 2 c Conditions MOSFET symbol A V D showing the integral reverse G p-n junction diode. TJ = 25C, IS = 10A, VGS = 0V S e TJ = 25C, IF = 10A, VDD = 15V See Fig. 16 di/dt = 500A/s e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF7823PbF 1000 1000 ID, Drain-to-Source Current (A) 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V TOP ID, Drain-to-Source Current (A) TOP 100 10 1 0.1 2.3V 0.1 10 60s PULSE WIDTH Tj = 150C 1 0.1 10 0.1 100 1 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 2.3V 1 60s PULSE WIDTH Tj = 25C 0.01 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 100 10 T J = 150C T J = 25C 1 VDS = 15V 60s PULSE WIDTH 0.1 ID = 13A VGS = 10V 1.5 1.0 0.5 1 2 3 4 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF7823PbF 10000 12.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED ID= 10A VGS, Gate-to-Source Voltage (V) Crss = C gd C, Capacitance (pF) Coss = Cds + Cgd Ciss 1000 Coss Crss 100 10.0 VDS= 24V VDS= 15V 8.0 6.0 4.0 2.0 0.0 10 1 10 0 100 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 6 8 10 12 14 16 18 20 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 T J = 150C T J = 25C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100sec 10 1msec 10msec 1 0.1 T A = 25C Tj = 150C Single Pulse VGS = 0V 0.1 0.01 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 4 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 10 2 1.2 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7823PbF 14 VGS(th) , Gate Threshold Voltage (V) 2.5 ID, Drain Current (A) 12 10 8 6 4 2 0 2.0 ID = 50A 1.5 1.0 0.5 25 50 75 100 125 150 -75 -50 -25 T A , Ambient Temperature (C) 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 Thermal Response ( Z thJA ) 10 1 J 0.1 R1 R1 J 1 R2 R2 R3 R3 A 2 1 2 3 C i= i/R i C i= i/R i 0.01 3 A Ri (C/W) i (sec) 7.520 0.013427 25.573 1.1097 16.913 36.9 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Ta 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 30 1000 ID = 13A EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) IRF7823PbF 25 20 15 T J = 125C 10 T J = 25C 5 0 2 4 6 8 10 ID TOP 0.82A 1.1A BOTTOM 10A 800 600 400 200 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) VGS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage LD VDS 15V L VDS VDD DRIVER D.U.T D.U.T RG + V - DD IAS VGS 20V VGS Pulse Width < 1s Duty Factor < 0.1% A 0.01 tp Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS I AS Fig 14b. Unclamped Inductive Waveforms 6 td(on) tf td(off) tr Fig 15b. Switching Time Waveforms www.irf.com IRF7823PbF D.U.T Driver Gate Drive P.W. + + - - * * * * D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - Period + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Id Current Regulator Same Type as D.U.T. Vds Vgs 50K 12V .2F .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit www.irf.com Fig 18. Gate Charge Waveform 7 IRF7823PbF Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. The power loss equation for Q2 is approximated by; * Ploss = Pconduction + Pdrive + Poutput ( 2 Ploss = Irms x Rds(on) ) Power losses in the control switch Q1 are given by; + (Qg x Vg x f ) Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput Q + oss x Vin x f + (Qrr x Vin x f ) 2 This can be expanded and approximated by; Ploss = (Irms x Rds(on ) ) 2 Qgs 2 Qgd +I x x Vin x f + I x x Vin x f ig ig + (Qg x Vg x f ) + Qoss x Vin x f 2 This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by the power supply input buss voltage. 8 *dissipated primarily in Q1. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs' susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Figure A: Qoss Characteristic www.irf.com IRF7823PbF SO-8 Package Outline (Dimensions are shown in millimeters (inches) ' ,1&+(6 0,1 0$; $ $ E F ' ( %$6,& H H %$6,& + . / \ ',0 % $ + ( ; >@ $ H H ;E >@ $ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & \ >@ ;/ ;F & $ % 127(6 ',0(16,21,1*72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking (;$03/(7+,6,6$1,5)026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'(<:: 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 www.irf.com 9 IRF7823PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 4.3mH, RG = 25, IAS = 10A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ approximately 90C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/05 10 www.irf.com