Issue 1 - March 2006 1 www.zetex.com
© Zetex Semiconductors plc 2005
ZXMN4A06K
40V N-channel enhancement mode MOSFET
Summary
V(BR)DSS= -40V; RDS(ON) = 0.05; ID = 10.9A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage,
power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• DPAK package
Applications
•DC - DC converters
• Audio output stages
• Relay and solenoid driving
• Motor control
Ordering information
Device marking
ZXMN
4A06
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN4A06KTC 13 16 2,500
D
S
G
Pinout - Top view
ZXMN4A06K
Issue 1 - March 2006 2 www.zetex.com
© Zetex Semiconductors plc 2005
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Parameter Symbol Limit Unit
Drain-source voltage VDSS 40 V
Gate-source voltage VGS 20 V
Continuous drain current:
ID
VGS=10V; TA=25°C (b) 10.9 A
VGS=10V; TA=70°C (b) 8.7 A
VGS=10V; TA=25°C (a) 7.2 A
Pulsed drain current (c) IDM 35.3 A
Continuous source current (body diode)
(b)
IS10.8 A
Pulsed source current (body diode) (c) ISM 35.3 A
Power dissipation at TA=25°C (a)
Linear derating factor
PD4.2
33.6
W
mW/°C
Power dissipation at TA=25°C (b)
Linear derating factor
PD9.5
76
W
mW/°C
Power dissipation at TA=25°C (d)
Linear derating factor
PD2.15
17.2
W
mW/°C
Operating and storage temperature range Tj:Tstg -55 to +150 °C
Thermal resistance
Parameter Symbol Value Unit
Junction to ambient (a) RJA 30 °C/W
Junction to ambient (b) RJA 13.2 °C/W
Junction to ambient (d) RJA 58 °C/W
ZXMN4A06K
Issue 1 - March 2006 4 www.zetex.com
© Zetex Semiconductors plc 2005
Electrical characteristics (at TA = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage
V(BR)DSS 40 V ID=250A, VGS=0V
Zero gate voltage drain current IDSS 1AV
DS=40V, VGS=0V
Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-source threshold voltage VGS(th) 1.0 V ID=250A, VDS= VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Width 300s. Duty cycle 2%.
RDS(on) 0.050 VGS=10V, ID=4.5A
0.075 VGS=4.5V, ID=3.2A
Forward transconductance(‡) gfs 11.5 S VDS=15V,ID=4.5A
Dynamic (‡)
Input capacitance Ciss 827 pF
VDS=20 V, VGS=0V,
f=1MHz
Output capacitance Coss 133 pF
Reverse transfer capacitance Crss 84 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on delay time td(on) 3.2 ns
VDD =20V, ID=1A
RG=6.0, VGS=10V
(refer to test circuit)
Rise time tr3.8 ns
Turn-off delay time td(off) 23.3 ns
Fall time tf10.9 ns
Total gate charge Qg17.1 nC
VDS=20V,VGS=10V,
ID=4.5A
(refer to test circuit)
Gate-source charge Qgs 2.41 nC
Gate-drain charge Qgd 3.4 nC
Source-drain diode
Diode forward voltage(*) VSD 0.83 0.95 V TJ=25°C, IS=4.5A,
VGS=0V
Reverse recovery time(†) trr 16 ns TJ=25°C, IF=4A,
di/dt= 100A/s
Reverse recovery charge(‡) Qrr 9nC
ZXMN4A06K
Issue 1 - March 2006 6 www.zetex.com
© Zetex Semiconductors plc 2005
Typical characteristics
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basic gate charge waveform
Switching time waveforms
D.U.T
50k
12V Same as
D.U.T
VGS
VGS
VDS
VGQGS QGD
QG
VGS
90%
10%
t(on)
t(on)
td(on) trtr
td(off)
VDS
VCC
RD
RG
VDS
ID
IG
ZXMN4A06K
Issue 1 - March 2006 8 www.zetex.com
© Zetex Semiconductors plc 2005
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Package details - DPAK
Package dimensions
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Dim. Inches Millimeters Dim. Inches Millimeters
Min. Max. Min. Max. Min. Max. Min. Max.
A 0.086 0.094 2.18 2.39 e 0.090 BSC 2.29 BSC
A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41
b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78
b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF
b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC
c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65
c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016
D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52
D1 0.205 - 5.21 - 1° 0° 10° 0° 10°
E 0.250 0.265 6.35 6.73 ° 0° 15° 0° 15°
E10.170-4.32------
