SD803C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 845 A FEATURES * High power FAST recovery diode series * 1.0 to 1.5 s recovery time RoHS COMPLIANT * High voltage ratings up to 1600 V * High current capability * Optimized turn-on and turn-off characteristics B-43 * Low forward recovery * Fast and soft reverse recovery * Press PUK encapsulation * Case style conform to JEDEC B-43 * Maximum junction temperature 125 C * Lead (Pb)-free PRODUCT SUMMARY IF(AV) 845 A * Designed and qualified for industrial level TYPICAL APPLICATIONS * Snubber diode for GTO * High voltage freewheeling diode * Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IF(RMS) IFSM I2 t VRRM trr TJ Document Number: 93180 Revision: 04-Aug-08 TEST CONDITIONS Ths Ths VALUES UNITS 845 A 55 C 1326 A 25 C 50 Hz 11 295 60 Hz 11 830 A 50 Hz 640 60 Hz 583 Range 400 to 1600 V 1.0 to 1.5 s TJ 25 - 40 to 125 For technical questions, contact: ind-modules@vishay.com kA2s C www.vishay.com 1 SD803C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 845 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 SD803C..S10C SD803C..S15C IRRM MAXIMUM AT TJ = 125 C mA 45 FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled IF(AV) Maximum RMS current IF(RMS) 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive forward current t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing t = 8.3 ms I2t t = 10 ms I2t A 55 (75) C 1326 11 830 Sinusoidal half wave, initial TJ = TJ maximum 9945 640 583 412 t = 0.1 to 10 ms, no voltage reapplied 6400 VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 1.02 High level of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.32 Low level of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.38 High level of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.28 Ipk = 2655 A, TJ = 25 C; tp = 10 ms sinusoidal wave 1.89 VFM kA2s 451 Low level of threshold voltage Maximum forward voltage drop A 9500 100 % VRRM reapplied t = 8.3 ms Maximum I2t for fusing No voltage reapplied UNITS 11 295 No voltage reapplied 100 % VRRM reapplied VALUES 845 (420) kA2s V m V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 C CODE trr AT 25 % IRRM (s) S10 1.0 S15 1.5 www.vishay.com 2 TYPICAL VALUES AT TJ = 125 C TEST CONDITIONS Ipk SQUARE PULSE (A) dI/dt (A/s) 1000 25 IFM Vr (V) - 30 trr AT 25 % IRRM (s) Qrr (C) Irr (A) 2.0 45 34 3.2 87 51 For technical questions, contact: ind-modules@vishay.com dir dt trr t Qrr IRM(REC) Document Number: 93180 Revision: 04-Aug-08 SD803C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 845 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TEST CONDITIONS VALUES UNITS TJ - 40 to 125 TStg - 40 to 150 C RthJ-hs DC operation single side cooled 0.076 DC operation double side cooled 0.038 K/W Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet 9800 (1000) N (kg) 83 g B-43 RthJ-hs CONDUCTION SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.006 0.007 0.005 0.005 120 0.008 0.008 0.008 0.008 90 0.010 0.010 0.011 0.011 60 0.015 0.015 0.016 0.016 30 0.026 0.026 0.026 0.026 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 93180 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD803C..C Series SD803C..C Series (Single Side Cooled) RthJ-hs (DC) = 0.076 K/ W 120 110 100 Conduction Angle 90 30 80 60 180 90 120 70 0 50 100 150 200 250 300 350 400 450 Conduction Period 80 30 60 70 90 120 60 180 DC 50 0 100 200 300 400 500 600 700 Maximum Average Forward Power Loss (W) SD803C..C Series (Single Side Cooled) RthJ-hs (DC) = 0.076 K/ W 90 90 Conduction Period 80 70 60 90 50 30 60 120 180 DC 40 0 200 400 600 800 1000 1200 1400 1600 180 120 90 60 30 1400 1200 RMSLimit 1000 800 600 Conduction Angle 400 SD803C..C Series TJ = 125C 200 0 0 100 200 300 400 500 600 700 800 900 Average Forward Current (A) Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics SD803C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.038 K/ W 110 100 Conduc tion Angle 90 30 60 90 120 180 60 50 www.vishay.com 4 100 Fig. 4 - Current Ratings Characteristics 100 70 110 Fig. 1 - Current Ratings Characteristics 110 80 SD803C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.038 K/ W 120 Average Forward Current (A) 120 120 130 Average Forward Current (A) 130 130 Maximum Allowable Heatsink Temperature (C) 130 Fast Recovery Diodes (Hockey PUK Version), 845 A 0 100 200 300 400 500 600 700 800 900 Maximum Average Forward Power Loss (W) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Vishay High Power Products 2200 DC 180 120 90 60 30 2000 1800 1600 1400 1200 1000 RMS Limit 800 Conduction Period 600 400 SD803C..C Series TJ = 125C 200 0 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) Average Forward Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - Forward Power Loss Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 93180 Revision: 04-Aug-08 SD803C..C Series 10000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 9000 8000 7000 6000 5000 SD803C..C Series 4000 1 10 100 Transient Thermal Impedance Z thJ-hs (K/ W) Peak Half Sine Wave Forward Current (A) Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 845 A 0.1 SD803C..C Series 0.01 Steady State Value R thJ-hs = 0.076 K/ W (Single Side Cooled) R thJ-hs = 0.038 K/ W (Double Side Cooled) (DC Operation) 0.001 0.001 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. 11000 Initial TJ = 125C 10000 No Voltage Reapplied Rated VRRMReapplied 9000 8000 7000 6000 5000 4000 SD803C..C Series 3000 0.01 0.1 1 Pulse Train Duration (s) Instantaneous Forward Current (A) 10000 1000 TJ= 25C TJ= 125C SD803C..C Series 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous Forward Voltage (V) Fig. 9 - Forward Voltage Drop Characteristics Document Number: 93180 Revision: 04-Aug-08 1 10 100 2.2 2.1 SD803C..S10C Series TJ= 125 C; V r = 30V I FM = 1000 A Square Pulse 2 1.9 500 A 1.8 1.7 250 A 1.6 10 100 Rate Of Fall Of Forward Current - di/dt (A/ s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 100 Maximum Reverse Recovery Time - Trr (s) 12000 0.1 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 11 - Recovery Time Characteristics Maximum Reverse Rec overy Charge - Qrr (C) Peak Half Sine Wave Forward Current (A) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 0.01 Square Wave Pulse Duration (s) Number Of Equa l Amplitude Half Cycle Current Pulses (N) 130 120 I FM = 1000 A Square Pulse 110 100 500 A 90 80 250 A 70 60 50 40 30 SD803C..S10C Series TJ = 125 C; Vr = 30V 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 12 - Recovery Charge Characteristics For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD803C..C Series Fast Recovery Diodes (Hockey PUK Version), 845 A Maximum Reverse Recovery Charge - Qrr (C) Maximum Reverse Recovery Current - Irr (A) Vishay High Power Products 120 I FM = 1000 A 110 Square Pulse 100 500 A 90 80 250 A 70 60 50 40 30 SD803C..S10C Series TJ = 125 C; V r = 30V 20 10 10 20 30 40 50 60 70 80 90 100 Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Time - Trr (s) SD803C..S15C Series TJ= 125 C; V r = 30V 3.5 I FM = 1000 A Square Pulse 3 500 A 2.5 250 A 100 Rate Of Fall Of Forward Current - di/d t (A/ s) 140 500 A 120 250 A 100 80 SD803C..S15C Series TJ= 125 C; V r = 30V 60 40 10 20 30 40 50 60 70 80 90 100 140 I FM = 1000 A 130 Square Pulse 120 110 100 500 A 90 80 250 A 70 60 50 SD803C..S15C Series TJ= 125 C; V r = 30V 40 30 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 14 - Recovery Time Characteristics 10 Sq ua re Pulse 160 Fig. 15 - Recovery Charge Characteristics 4 1E4 I FM = 1000 A 180 Rate Of Fall Of Forward Current - di/ dt (A/ s) Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 13 - Recovery Current Characteristics 2 10 200 Fig. 16 - Recovery Current Characteristics 20 joules p er pulse 20 joules per pulse Peak Forward Current (A) 4 1 2 2 10 1 0.4 0.4 0.2 1E3 4 0.2 0.1 0.1 0.04 0.04 0.02 0.01 1E2 tp 1E1 1E1 SD803C..S10C Series Sinusoidal Pulse TJ = 125C, VRRM = 800V d v/ d t = 1000V/ s 1E2 tp 1E3 1E4 1E1 SD803C..S10C Series Trapezoidal Pulse TJ= 125C, VRRM = 800V d v/ dt = 1000V/ s; di/ dt=50A/ s 1E2 Pulse Basewidth (s) 1E3 1E4 Pulse Basewidth (s) Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93180 Revision: 04-Aug-08 SD803C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 845 A 1E4 10 20 joules per pulse 20 joules p er pulse 10 4 4 Peak Forward Current (A) 2 2 1 1 0.4 0.4 0.2 1E3 0.2 0.1 0.1 0.04 0.02 1E2 0.01 tp 1E1 1E1 SD803C..S15C Series Sinusoidal Pulse TJ = 125C, VRRM = 800V d v/ d t = 1000V/ s 1E2 tp 1E3 SD803C..S15C Series Trapezoidal Pulse TJ = 125C, VRRM = 800V d v/ dt = 1000V/ s; di/ dt=50A/ s 1E1 1E4 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 18 - Maximum Total Energy Loss Per Pulse Characteristics ORDERING INFORMATION TABLE Device code SD 80 3 C 16 S15 C 1 2 3 4 5 6 7 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - trr code (see Recovery Characteristics table) 7 - C = PUK case B-43 LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93180 Revision: 04-Aug-08 http://www.vishay.com/doc?95249 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 Outline Dimensions Vishay Semiconductors B-43 DIMENSIONS in millimeters (inches) 42 (1.65) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 25.3 (1) DIA. MAX. 2 places 15.4 (0.61) 14.4 (0.57) 0.8 (0.03) MIN. both ends 40.5 (1.59) DIA. MAX. Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Document Number: 95249 Revision: 26-Nov-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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