Document Number: 93180 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 04-Aug-08 1
Fast Recovery Diodes
(Hockey PUK Version), 845 A
SD803C..C Series
Vishay High Power Products
FEATURES
• High power FAST recovery diode series
• 1.0 to 1.5 µs recovery time
• High voltage ratings up to 1600 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC B-43
• Maximum junction temperature 125 °C
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
PRODUCT SUMMARY
IF(AV) 845 A
B-43
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IF(AV)
845 A
Ths 55 °C
IF(RMS)
1326 A
Ths 25 °C
IFSM
50 Hz 11 295 A
60 Hz 11 830
I2t50 Hz 640 kA2s
60 Hz 583
VRRM Range 400 to 1600 V
trr
1.0 to 1.5 µs
TJ25 °C
TJ- 40 to 125
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2Revision: 04-Aug-08
SD803C..C Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 845 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
IRRM MAXIMUM
AT TJ = 125 °C
mA
SD803C..S10C
04 400 500
45
08 800 900
10 1000 1100
SD803C..S15C
12 1200 1300
14 1400 1500
16 1600 1700
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at heatsink temperature IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
845 (420) A
55 (75) °C
Maximum RMS current IF(RMS) 25 °C heatsink temperature double side cooled 1326
A
Maximum peak, one-cycle
non-repetitive forward current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
11 295
t = 8.3 ms 11 830
t = 10 ms 100 % VRRM
reapplied
9500
t = 8.3 ms 9945
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
640
kA2s
t = 8.3 ms 583
t = 10 ms 100 % VRRM
reapplied
451
t = 8.3 ms 412
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6400 kA2√s
Low level of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.02 V
High level of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.32
Low level of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.38 mΩ
High level of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.28
Maximum forward voltage drop VFM Ipk = 2655 A, TJ = 25 °C; tp = 10 ms sinusoidal wave 1.89 V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C TEST CONDITIONS TYPICAL VALUES
AT TJ = 125 °C
trr AT 25 % IRRM
(µs)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/µs)
Vr
(V)
trr AT 25 % IRRM
(µs)
Qrr
(µC)
Irr
(A)
S10 1.0 1000 25 - 30 2.0 45 34
S15 1.5 3.2 87 51
IFM trr
dir
dt
IRM(REC)
Qrr
t
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Revision: 04-Aug-08 3
SD803C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 845 A Vishay High Power Products
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range TJ- 40 to 125
°C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance,
junction to heatsink RthJ-hs
DC operation single side cooled 0.076
K/W
DC operation double side cooled 0.038
Mounting force, ± 10 % 9800 (1000) N (kg)
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet B-43
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.006 0.007 0.005 0.005
TJ = TJ maximum K/W
120° 0.008 0.008 0.008 0.008
90° 0.010 0.010 0.011 0.011
60° 0.015 0.015 0.016 0.016
30° 0.026 0.026 0.026 0.026
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4Revision: 04-Aug-08
SD803C..C Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 845 A
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400 450
30°
60° 90°
120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD 8 0 3 C . . C Se r i e s
(Single Side Cooled)
R (DC) = 0.076 K/ W
thJ-hs
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
30°
60°
90°
180° DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD803C..C Se ries
(Single Side Cooled)
R (DC) = 0.076 K/ W
thJ-hs
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 900
30° 60°
90°
120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD 8 0 3 C . . C Se r i e s
(Double Side Cooled)
R (DC) = 0.038 K/ W
thJ-hs
40
50
60
70
80
90
100
110
120
130
0200400600800100012001400
30° 60°
90°
180° DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temp erature (°C)
Conduction Period
SD 8 0 3C . . C Se r i e s
(Double Side Cooled)
R (DC) = 0.038 K/ W
thJ-hs
0
200
400
600
800
1000
1200
1400
1600
0 100200300400500600700800900
180°
120°
90°
60°
30° RM S Li m it
Conduction Angle
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD803C..C Se ries
T = 125°C
J
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0 200 400 600 800 1000 1200 1400
DC
180°
120°
90°
60°
30°
RM S Lim i t
Conduction Period
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD803C..C Series
T = 125°C
J
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Revision: 04-Aug-08 5
SD803C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 845 A Vishay High Power Products
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Recovery Time Characteristics
Fig. 12 - Recovery Charge Characteristics
4000
5000
6000
7000
8000
9000
10000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pe a k Ha lf Sine Wa v e Fo rw a rd Cu rre n t ( A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
SD 8 0 3 C . . C Se r i e s
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
Versus Pulse Train Duration.
Maximum Non Repetitive Surge Current
Initial T = 125°C
No Voltage Reapplied
Ra t e d V Re a p p li e d
RRM
J
SD803C..C Se ries
10
100
1000
10000
00.511.522.533.544.5
T = 2 5 ° C
J
Instantaneous Forward Voltage (V)
Insta nt a neous Forw a rd Current (A)
T = 125°C
J
SD 8 0 3 C . . C Se r i e s
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Squa re Wave Pulse Dura tion (s)
thJ-hs
Transient Thermal Impedance Z (K/ W)
St e a d y St a t e V a l u e
R = 0.076 K/ W
(Single Side Cooled)
R = 0.038 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
SD 8 0 3 C . . C Se r i e s
1.6
1.7
1.8
1.9
2
2.1
2.2
00101
Ra t e Of Fa ll O f Forwa rd Current - d i/ d t (A/ µs)
Ma xim um Reverse Rec o ve ry Tim e - Trr (µs)
I = 1000 A
Sq u a r e Pu l se
500 A
250 A
FM
SD 8 0 3 C . . S1 0 C Se r i e s
T = 125 °C; V = 30V
r
J
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1000 A
Sq u a r e Pu l s e
FM
500 A
250 A
SD 8 0 3 C . . S1 0 C Se r i e s
T = 125 °C; V = 30V
r
J
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6Revision: 04-Aug-08
SD803C..C Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 845 A
Fig. 13 - Recovery Current Characteristics
Fig. 14 - Recovery Time Characteristics
Fig. 15 - Recovery Charge Characteristics
Fig. 16 - Recovery Current Characteristics
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
10
20
30
40
50
60
70
80
90
100
110
120
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Rec overy Current - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1000 A
Sq u a r e Pu l se
FM
500 A
250 A
SD 8 0 3 C . . S1 0 C Se r i e s
T = 125 °C; V = 30V
r
J
2
2.5
3
3.5
4
00101
Ra t e O f Fa ll O f Fo rw a rd C u rr e n t - d i / d t (A/ µ s)
Maximum Reverse Rec ove ry Time - Trr (µs)
I = 1000 A
Sq u a r e P u l se
FM
500 A
250 A
SD 8 0 3 C . . S1 5 C Series
T = 125 °C; V = 30V
J
r
40
60
80
100
120
140
160
180
200
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1000 A
Sq u a r e P u l se
FM
500 A
250 A
SD 8 0 3 C . . S1 5 C Se r i e s
T = 125 °C; V = 30V
r
J
20
30
40
50
60
70
80
90
100
110
120
130
140
10 20 30 40 50 60 70 80 90 100
Maximum Re verse Recove ry Current - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1000 A
Sq u a r e Pu l se
FM
500 A
250 A
SD 8 0 3 C . . S1 5 C Series
T = 125 °C; V = 30V
r
J
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
12
0.1
Pu lse Ba se w id t h ( µ s)
Peak Forward Current (A)
4
d v/ d t = 1000V/ µs
Si n u so i d a l Pu l se
20 joules per p ulse
10
0.4
0.2
0.04
T = 125°C, V = 800V
J
RRM
0.02
0.01
SD803C..S10C Se rie s
tp
1E11E21E31E4
1
2
0.1
Pu lse Ba se w i d t h ( µ s)
4
20 joules pe r p ulse
10
0.4
0.2
0.04
T = 125°C, V = 800V
Tr a p e z o i d a l P u l se
dv/dt = 1000V/µs; di/dt=50A/µs
SD 8 0 3 C . . S1 0 C Se r i e s
J
RRM
tp
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Revision: 04-Aug-08 7
SD803C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 845 A Vishay High Power Products
Fig. 18 - Maximum Total Energy Loss Per Pulse Characteristics
ORDERING INFORMATION TABLE
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
0.1
Pu l se Ba se w i d t h ( µ s)
Pea k Forw a rd Current ( A)
4
dv/dt = 1000V/µs
Sinusoidal Pulse
20 jo ule s p er p ulse
10
0.4
0.2
0.04
T = 125°C, V = 800V
0.02
0.01
J
RRM
SD 8 0 3 C . . S1 5 C Se r i e s
tp
1E1 1E2 1E3 1E4
1
2
0.1
Pu lse Ba se w id t h ( µ s)
4
20 joule s p er pulse
10
0.4
0.2
T = 125°C, V = 800V
Tr a p e z o i d a l Pu l se
d v/ d t = 1000V/ µs; d i/ dt =50A/ µs
SD 8 0 3 C . . S1 5 C Se r i e s
J
RRM
tp
1
- Diode
2
- Essential part number
3
- 3 = Fast recovery
4
- C = Ceramic PUK
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
-t
rr
code (see Recovery Characteristics table)
7
- C = PUK case B-43
Device code
51324
67
SD 80 3 C 16 S15 C
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95249
Document Number: 95249 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 26-Nov-07 1
B-43
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
42 (1.65) DIA. MAX.
40.5 (1.59) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03) MIN.
both ends
25.3 (1) DIA. MAX.
2 places
14.4 (0.57)
15.4 (0.61)
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Revision: 12-Mar-12 1Document Number: 91000
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