Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) () ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5 * Halogen-free According to IEC 61249-2-21 Available * LITTLE FOOT(R) Plus Power MOSFET * 100 % Rg Tested Qg (Typ.) 7.8 11.6 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V at 1.0 A 2.0 D1 SO-8 G1 G1 1 8 D1 A/S2 2 7 D2/S1 A/S2 3 6 D2/S1 G2 4 5 D2/S1 N-Channel 1 MOSFET S1/D2 Schottky Diode G2 Top View N-Channel 2 MOSFET Ordering Information: Si4816BDY-T1-E3 (Lead (Pb)-free) Si4816BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 A ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Channel-1 Parameter Symbol 10 s Channel-2 Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C ID a Continuous Source Current (Diode Conduction) IS Single Pulse Avalanche Current IAS Avalanche Energy Maximum Power Dissipationa 6.8 5.8 11.4 4.6 9.0 L = 0.1 mH TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range 30 1 PD 0.9 6.5 2.2 A 1.15 20 5 20 mJ 1.4 1.0 2.4 1.25 0.9 0.64 1.5 0.8 TJ, Tstg Unit 8.2 40 10 EAS Steady State V 5.5 IDM Pulsed Drain Current 10 s - 55 to 150 W C THERMAL RESISTANCE RATINGS Channel-1 Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Channel-2 Schottky Typ. Max. Typ. Max. Typ. Max. 72 90 43 53 48 60 100 125 82 100 80 100 51 63 25 30 28 35 Unit C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 www.vishay.com 1 Si4816BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 250 A IGSS VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85 C On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) RDS(on) gfs VSD Ch-1 1.0 3.0 Ch-2 1.0 3.0 Ch-1 100 Ch-2 100 Ch-1 1 Ch-2 100 Ch-1 15 Ch-2 V nA A 2000 VDS = 5 V, VGS = 10 V Ch-1 20 Ch-2 30 VGS = 10 V, ID = 6.8 A Ch-1 A 0.0155 0.0185 VGS = 10 V, ID = 11.4 A Ch-2 0.0093 0.0115 VGS = 4.5 V, ID = 6.0 A Ch-1 0.0185 0.0225 VGS = 4.5 V, ID = 9.5 A Ch-2 0.013 0.016 VDS = 15 V, ID = 6.8 A Ch-1 30 VDS = 15 V, ID = 11.4 A Ch-2 31 IS = 1 A, VGS = 0 V Ch-1 0.73 1.1 IS = 1 A, VGS = 0 V Ch-2 0.47 0.5 Ch-1 7.8 10 Ch-2 11.6 18 Ch-1 2.9 Ch-2 4.8 Ch-1 2.3 S V Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Channel-1 VDS = 15 V, VGS = 5 V, ID = 6.8 A Qgs Qgd Channel-2 VDS = 15 V, VGS = 5 V, ID = - 11.4 A Ch-2 Rg td(on) tr td(off) tf 3.7 Ch-1 1.5 3.0 4.5 Ch-2 0.9 1.8 2.7 Ch-1 11 17 Ch-2 13 20 Ch-1 9 15 Ch-2 9 15 Ch-1 24 40 Ch-2 31 50 Ch-1 9 15 Ch-2 11 17 IF = 1.3 A, dI/dt = 100 A/s Ch-1 20 35 IF = 2.2 A, dI/dt = 100 A/s Ch-2 25 40 Channel-1 VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 6 Channel-2 VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 6 trr nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. www.vishay.com 2 Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 Si4816BDY Vishay Siliconix SCHOTTKY SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Test Conditions Typ. Max. IF = 1.0 A 0.47 0.50 IF = 1.0 A, TJ = 125 C 0.36 0.42 VR = 30 V 0.004 0.100 VR = 30 V, TJ = 100 C 0.7 10 VR = - 30 V, TJ = 125 C 3.0 20 VR = 10 V 50 CT Junction Capacitance Min. Unit V mA pF Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 VGS = 10 thru 4 V 35 30 I D - Drain Current (A) I D - Drain Current (A) 35 25 20 15 10 30 25 20 15 TC = 125 C 10 3V 25 C 5 5 2V - 55 C 0 0.0 0 0 1 2 3 4 5 0.5 1.0 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1200 0.05 1000 0.04 C - Capacitance (pF) RDS(on) - On-Resistance () 1.5 0.03 VGS = 4.5 V 0.02 Ciss 800 600 400 VGS = 10 V Coss 0.01 200 0.00 Crss 0 0 5 10 15 20 25 30 35 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 40 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 Si4816BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1.6 VGS = 10 V ID = 6.8 A VDS = 15 V ID = 6.8 A 5 4 3 2 (Normalized) 1.4 R DS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) 6 1.2 1.0 0.8 1 0.6 - 50 0 0 2 4 6 8 10 - 25 0 Gate Charge RDS(on) - On-Resistance () I S - Source Current (A) 75 100 125 150 0.05 TJ = 150 C 10 TJ = 25 C 0.04 0.03 ID = 6.8 A 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 100 0.2 80 ID = 250 A 0.0 Power (W) V GS(th) Variance (V) 50 On-Resistance vs. Junction Temperature 40 1 0.0 25 TJ - Junction Temperature (C) Qg - Total Gate Charge (nC) - 0.2 60 40 - 0.4 20 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 TJ - Temperature (C) Threshold Voltage www.vishay.com 4 100 125 150 0.001 0.01 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 Si4816BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 Limited by RDS(on)* IDM Limited I D - Drain Current (A) 10 1 ms 1 10 ms ID(on) Limited 100 ms 0.1 TC = 25 C Single Pulse BVDSS Limited 0.01 0.1 1s 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 100 C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 3 10- 4 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 www.vishay.com 5 Si4816BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 VGS = 10 thru 5 V 32 4V I D - Drain Current (A) I D - Drain Current (A) 32 24 16 24 16 TC = 125 C 8 8 25 C 3V - 55 C 2V 0 0.0 0 1 2 3 4 5 0.5 1.0 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 2000 0.016 1600 VGS = 4.5 V 0.012 VGS = 10 V 0.008 4.0 4.5 Ciss 1200 800 Coss 400 0.004 Crss 0 0.000 0 5 10 15 20 25 0 30 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 6 1.6 VDS = 15 V ID = 9.5 A 1.4 4 3 2 (Normalized) 5 R DS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) 1.5 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) RDS(on) - On-Resistance () 0 VGS = 10 V ID = 9.5 A 1.2 1.0 0.8 1 0 0 www.vishay.com 6 3 6 9 12 15 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 Si4816BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.05 R DS(on) - On-Resistance () I S - Source Current (A) 40 TJ = 150 C 10 TJ = 25 C 1 0.0 0.04 0.03 0.02 ID = 9.5 A 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 10 100 1 80 VDS = 30 V 0.1 Power (W) IR - Reverse Current (mA) 4 VDS = 24 V 0.01 60 40 0.001 20 0.0001 0.00001 0 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (C) 0.1 1 10 Time (s) Reverse Current vs. Junction Temperature Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* IDM Limited I D - Drain Current (A) 10 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 1s TC = 25 C Single Pulse 10 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 www.vishay.com 7 Si4816BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 82 C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot www.vishay.com 8 Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 Si4816BDY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 10 TJ = 150 C I F - Forward Current (A) I R - Reverse Current (mA) 10 1 30 V 0.1 24 V 0.01 TJ = 25 C 0.001 0.0001 0 25 50 75 100 125 1 0.0 150 0.3 0.6 0.9 1.2 TJ - Temperature (C) VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop 1.5 200 C - Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73026. Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 www.vishay.com 9 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 8 0 8 S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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