1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector
applications. They are readily adaptable to many other fast switching RF and digital
applications. They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
•The Schottky Barrier Construction Provides Ultra–Stable Characteristics by
Eliminating the “Cat–Whisker” or “S–Bend” Contact
•Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
•Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
•Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
MBD301 MMBD301LT1
Rating Symbol Value Unit
Reverse Voltage VR30 Volts
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF280
2.8 200
2.0 mW
mW/°C
Operating Junction
Temperature Range TJ–55 to +125 °C
Storage Temperature Range Tstg –55 to +150 °C
DEVICE MARKING
MMBD301LT1 = 4T
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V(BR)R 30 — — Volts
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT— 0.9 1.5 pF
Minority Carrier Lifetime (IF = 5.0 mA, Krakauer Method) Figure 2
t
— 15 — ps
Reverse Leakage (VR = 25 V) Figure 3 IR— 13 200 nAdc
Forward Voltage (IF = 1.0 mAdc) Figure 4 VF— 0.38 0.45 Vdc
Forward Voltage (IF = 10 mAdc) Figure 4 VF— 0.52 0.6 Vdc
NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MBD301/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
CASE 182–02, STYLE 1
(TO–226AC)
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
12
3
12
3
CATHODE 1
ANODE
30 VOLTS
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
2
CATHODE 1
ANODE
Motorola, Inc. 1996
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Total Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Minority Carrier Lifetime
IF, FORWARD CURRENT (mA)
Figure 3. Reverse Leakage
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
, FORWARD CURRENT (mA)IF
, REVERSE LEAKAGE ( A)IR
m
0.2 0.4 0.6 0.8 1.0 1.2
100
10
0 6.0 12 18 24
10
1.0
0.1
0.01
0.001
0 10 20
500
0
0 3.0 6.0 9.0 12 15 21
1.6
3024 2718
1.2
0.8
0.4
f = 1.0 MHz
TA = –40
°
C
TA = 85
°
C
TA = 25
°
C
1.0
0.1
30 40 50 60 70 80 10090
KRAKAUER METHOD
0
2.8
2.4
2.0
30
TA = 100
°
C
75
°
C
25
°
C
, TOTAL CAPACITANCE (pF)CT
, MINORITY CARRIER LIFETIME (ps)
t
400
300
200
100
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
SAMPLING
OSCILLOSCOPE
(50
W
INPUT)
PADS
CAPACITIVE
CONDUCTION
FORWARD
CONDUCTION STORAGE
CONDUCTION
DUT
IF(PEAK)
IR(PEAK)
Figure 5. Krakauer Method of Measuring Lifetime
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD = 150°C – 25°C
556°C/W = 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
•The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
ÉÉ
ÉÉ
ÉÉ
ÉÉ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS
UNCONTROLLED IN P AND BEYOND DIM K
MINIMUM.
STYLE 1:
PIN 1. ANODE
2. CATHODE
CASE 182–02
ISSUE H
(TO–226AC)
A
L
K
B
R
F
P
D
HG
X X
SEATING
PLANE
1 2
V
N
C
N
SECTION X–X
D
J
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.21
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.49
D0.016 0.022 0.41 0.56
F0.016 0.019 0.407 0.482
G0.050 BSC 1.27 BSC
H0.100 BSC 3.54 BSC
J0.014 0.016 0.36 0.41
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.03 2.66
P––– 0.050 ––– 1.27
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
DJ
K
L
A
C
BS
H
GV
3
12
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer .
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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MBD301/D
*MBD301/D*
◊
