IXA12IF1200PC preliminary I C25 = = VCES VCE(sat)typ = XPT IGBT Copack 20 A 1200 V 1.8 V C (2) Part number IXA12IF1200PC (G) 1 E (3) Applications: Package: AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Housing: TO-263 (D2Pak) rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant u t Features / Advantages: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - low EMI - square RBSOA @ 3x Ic Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) SONICTM diode - fast and soft reverse recovery - low operating forward voltage -o IGBT Definition Conditions Collector emitter voltage VGE = 0 V VGES Maximum DC gate voltage IC25 Collector current e Symbol VCES s I C100 Total power dissipation I CES Collector emitter leakage current VCE = VCES ; VGE = 0 V I GES Gate emitter leakage current VCE = 0 V; VGE = 20 V VCE(sat) Collector emitter saturation voltage IC = p h a Ptot Ratings min. TVJ = 25C 20 V TC = 25C 20 A TC = 100 C 13 A TVJ = 25C 85 W TVJ = 25C 0.1 mA 1.8 TVJ = 125 C 2.1 5.4 Gate emitter threshold voltage I C = 0.3 mA; VGE = VCE QGon VCE = 600 V; VGE = 15 V; IC = 10 A t d(on) Turn-on delay time tr Current rise time t d(off) Turn-off delay time Inductive load tf Current fall time VCE = 600 V; IC = 10 A Eon Turn-on energy per pulse VGE = 15 V; R G = 100 Eoff Turn-off energy per pulse 15 V; RG = 100 nA 2.1 V V 6.5 V 27 nC 70 ns 40 ns 250 ns 100 ns 1.1 mJ mJ TVJ = 125C 30 A TVJ = 125C 10 s VCEK = 1200 V SCSOA t SC Short circuit duration VCE = 900 V; VGE = 15 V I SC Short circuit current R G = 100 ; non-repetitive R thJC Thermal resistance juntion to case (c) 2011 IXYS all rights reserved TVJ = 125 C 6 mA 500 1.1 VGE = Short circuit safe operation area IXYS reserves the right to change limits, conditions and dimensions. 0.1 TVJ = 25C Total gate charge Reverse bias safe operation area Unit V VGE(th) RBSOA max. 1200 TVJ = 125 C 9 A; VGE = 15 V typ. TVJ = 25C Data according to IEC 60747and per diode unless otherwise specified 40 A 1.5 K/W 20110330a IXA12IF1200PC preliminary Diode Ratings Symbol Definition Conditions I F25 Forward current TC = 25C 22 A TC = 100 C 14 A 2.2 V I F 100 VF min. I F = 10 A Forward voltage I RM Maximum reverse recovery current t rr Reverse recovery time Erec(off) Reverse recovery losses at turn-off RthJC Thermal resistance juntion to case e IGBT V0 Diode 1.3 C 10.5 A 350 ns 0.35 mJ min. typ. TVJ = 150 C TVJ = 150 C R2 Unit 1.1 V 153 m 1.25 V 85 m R4 C2 C3 h C1 R3 max. a R1 C4 IGBT Diode tbd tbd tbd R3 tbd tbd R4 tbd tbd 1 2 3 4 tbd tbd tbd tbd tbd tbd tbd tbd R2 p tbd R1 K/W Ratings s R0 V u -o Definition R0 1.95 1.8 R0 V0 1.95 I F = 10 A V0 Symbol TVJ = 25C TVJ = 125 C Equivalent Circuits for Simulation I Unit TVJ = 125 C VR = 600 V di F /dt = - 250 A/s; max. t Q rr Reverse recovery charge typ. IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110330a IXA12IF1200PC preliminary Package TO-263 (D2Pak) Ratings Conditions min. typ. Unit Symbol Definition TVJ Virtual junction temperature -55 150 C Tstg Storage temperature -55 150 C R thCH Thermal resistance case to heatsink 0.25 K/W 2 g Weight FC 20 Product Marking Logo Date Code Assembly Line N u Part number XXXXXXXXX IXYS yyww z -o Part No. 60 t Mounting force with clip max. 000000 = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Copack Reverse Voltage [V] TO-263AB (D2Pak) (2) Part Name IXA 12 IF 1200 PC a Ordering Standard s e Assembly Code I X A 12 IF 1200 PC Package TO-220AB (3) TO-247AD (3) TO-268AA (D3Pak) Delivering Mode Base Qty Code Key Voltage class 1200 1200 1200 p h Similar Part IXA12IF1200PB IXA12IF1200HB IXA12IF1200TC Marking on Product IXA12IF1200PC IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110330a IXA12IF1200PC preliminary W A H 4 c 2x e 10.92 (0.430) t s a 9.02 (0.355) E1 h 3.81 (0.150) 1.78 (0.07) 3x b e 3x b2 -o L L2 1 2 3 u A1 D E Supplier Option D1 L1 c2 p 2.54 (0.100) IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110330a IXA12IF1200PC preliminary 20 20 VGE = 15 V VGE = 15 V 17 V 19 V 16 16 12 12 TVJ = 25C IC [A] 13 V 11 V TVJ = 125C IC 8 8 [A] TVJ = 125C 9V 4 4 0 0 0 1 2 3 0 1 2 VCE [V] 3 4 VCE [V] Fig. 1 Typ. output characteristics t Fig. 2 Typ. output characteristics 20 20 u IC = 10 A VCE = 600 V 16 -o IC 15 12 VGE 10 [V] 8 e [A] TVJ = 125C 5 6 7 8 9 0 a TVJ = 25C 0 5 s 4 10 11 12 0 13 10 h VGE [V] p 2.5 2.0 Eon RG = 100 VCE = 600 V VGE = 15 V TVJ = 125C 30 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 3.0 20 QG [nC] 1.6 IC = 10 A VCE = 600 V VGE = 15 V TVJ = 125C Eon 2.0 E Eoff 1.5 [mJ] E [mJ] 1.0 1.2 Eoff 0.8 0.4 0.5 0.0 0 4 8 12 16 20 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved 0.0 80 120 160 200 240 RG [] Fig. 6 Typ. switching energy vs. gate resistance Data according to IEC 60747and per diode unless otherwise specified 20110330a IXA12IF1200PC preliminary 2.4 20 TVJ = 125C VR = 600 V 2.0 15 20 A 1.6 IF Qrr 1.2 10 [A] TVJ = 125C 5 TVJ = 25C 0 0.0 0.5 10 A [C] 0.8 5A 0.4 1.0 1.5 VF [V] 2.0 2.5 0.0 200 3.0 Fig. 7 Typ. forward characteristics 20 A IRR 5A 12 [A] trr [ns] e 8 s 4 450 a 300 350 400 diF /dt [A/s] 500 10 A 5A 200 100 0 200 250 300 350 400 diF /dt [A/s] 450 500 Fig. 10 Typ. recovery time trr vs. di/dt (125C) h Fig. 9 Typical peak reverse current IRR versus diF /dt (125C) 0.6 VR = 600 V 300 -o 10 A 250 500 400 16 0 200 450 TVJ = 125C 20 A u 20 350 400 diF /dt [A/s] t 500 VR = 600 V 300 Fig. 8 Typical reverse recovery charge Qrr versus. diF/dt (125C) 24 TVJ = 125C 250 p TVJ = 125C VR = 600 V 0.5 20 A Erec 0.4 [mJ] 10 A 0.3 5A 0.2 0.1 200 250 300 350 400 diF /dt [A/s] 450 500 Fig. 11 Typ. recovery energy Erec vs. diF/dt (125C) IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110330a