IXA12IF1200PC
preliminary
Copack
nC
I = A; V = V
XPT IGBT
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
C25
A
t
A
RBSOA 30
V2.1 V
C
(2)
E(3)
(G) 1
min.
40
Applications:
V
CES
V1200
20T = 25°C
C
T = °C
C
A13
Package:
Part number
T = 125°C
VJ
V = V;
GE
R =
G
100
V
GE(th)
6.5 V
2.1 V
5.4
I
V
C25
=
=20
1200
15
IXA12IF1200PC
A
V
Collector emitter voltage
Collector current
Reverse bias safe operation area
Gate emitter threshold voltage
Conditions Unit
T = 25°C
VJ
P
tot
W85T = 25°C
VJ
µs10
V = V
CEK
Ω
1200
V = V; V = ±15 V
CE
900
Total power dissipation
=1.8 V
● Housing: TO-263 (D2Pak)
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
V
GES
V±20
Maximum DC gate voltage T = 25°C
VJ
I
SC
; non-repetitive
Short circuit current
I
CES
mAV = V ; V = 0 V 0.1
Collector emitt er leak age cur ren t
CE
T = 25°C
VJ
mA0.1
I
GES
nA500
Gate emitter leakage current
R
thJC
1.5
Thermal resistance juntion to case
t
d(on)
ns70
Turn-on delay time
40 ns
T = °C125
Turn-on energy per pulse
ns
250
100 ns
1.1
1.1
27
mJ
mJ
Inductive load
VJ
CE(sat)
Collector emitter saturation voltage
SC
Short circuit duration
CES
V
CE(sat)typ
I
R =
G
SCSOA Short circuit safe operation area
GE
Ω
I = mA; V = V
C
GE
T = 25°C
VJ
T = °C
VJ
125
1.8
C
GE
CE
CES GE
6
T = °C
VJ
125
V = 0 V; V = ±20 V
CE GE
V = V; I = A
CE C
Current rise time
Turn-off delay time
Current fall time
Turn-off energy per pulse
t
r
t
d(off)
t
f
E
on
E
off
V = ±15 V; R =
GE G
Ω
Gon
Total gate charge
K/W
V = V; V = V; I = A
CE GE C
100
915
0.3
600 10
100
600 15 10
A
T = 125°C
VJ
IGBT
V = 0 V
GE
100
100
C
IXYS reserves the right to change limits, conditions and dimensions. 20110330a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
p h a s e - o u t
Q
IXA12IF1200PC
preliminary
T = °C
I
F25
A
22T = 25°C
C
Forward current
Reverse recovery time
V = V
Q
T = 25°C
Reverse recovery charge
V
1.95
µC
I = A
VJ
R
VJ
Symbol Definition Ratings
typ. max.min.Conditions Uni
t
F
rr
1.3
350 nst
rr
Maximum reverse recovery current 10.5
A
0.35
R
thJC
Thermal resistance juntion to case 1.8 K/W
di /dt = - A/µs;
F
250
IGBT 1.1
V
V
0
Diode 1.25
V
I
F
T = °C
C
A
14
V
F
Forward voltage
T = °C125
VJ
V
1.95
I
RM
E
rec(off)
Reverse recovery losses at turn-off I = A
F
Symbol Definition Ratings
typ. max.min. Uni
t
I
V
0
R
0
R
0
V
0
R
0
153
85
Ω
m
Ω
m
125
2.2
600
Diode
Equivalent Circuits for Simulation
R1 R2 R3 R4
C1 C2 C3 C4
tbd
R
1
tbd
DiodeIGBT
R
2
R
3
R
4
tbd
tbd
tbd
tbd
tbd
tbd
tbd
τ
1
tbd
τ
2
τ
3
τ
4
tbd
tbd
tbd
tbd
tbd
tbd
T = °C
VJ
150
T = °C
VJ
150
10
10
100
100
mJ
IXYS reserves the right to change limits, conditions and dimensions. 20110330a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
p h a s e - o u t
IXA12IF1200PC
preliminary
Ratings
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
IXA 12 IF 1200 PC
Product Markin
g
Date Code
Part No.
Logo
Assembly Code
XXXXXXXXX
IXYS
yyww z
000000
Assembly Line
I
X
A
12
IF
1200
PC
Part number
IGBT
XPT IGBT
Gen 1 / std
Copack
TO-263AB (D2Pak) (2)
=
=
=
IXA12IF1200PB
IXA12IF1200HB
IXA12IF1200TC
TO-220AB (3)
TO-247AD (3)
TO-268AA (D3Pak)
Similar Part Package
Marking on Pr oduct
IXA12IF1200PC
1200
1200
1200
Voltage class
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package TO-263 (D2Pak)
R
thCH
K/W0.25
T
stg
°C150
Storage temperature -55
Weight g2
Symbol Definition typ. max.min.
Conditions
Thermal resistance case to heatsink
Unit
F
C
N60
Mount ing forc e w i th cli p 20
T
VJ
°C150
Virtual junction temperature -55
IXYS reserves the right to change limits, conditions and dimensions. 20110330a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
p h a s e - o u t
IXA12IF1200PC
preliminary
c2
A
A1
c
L
E
W
2x e
L1
D
321
3x b2
E1
3x b
H
D1
Supplier
Option
L2
4
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
10.92
(0.430)
9.02
(0.355)
IXYS reserves the right to change limits, conditions and dimensions. 20110330a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
p h a s e - o u t
IXA12IF1200PC
preliminary
0123
0
4
8
12
16
20
0 4 8 12 16 20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
01234
0
4
8
12
16
20
V
CE
[V]
I
C
[A]
9V
11 V
5678910111213
0
4
8
12
16
20
0102030
0
5
10
15
20
V
GE
[V]
T
VJ
=25°C
T
VJ
=125°C
T
VJ
=25°C
13 V
80 120160200240
0.0
0.4
0.8
1.2
1.6
2.0
E
[mJ]
E
on
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
=15V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy vs. collector current
E
off
Fig. 6 Typ. switching energy vs. gate resistance
Q
G
[nC]
R
G
[Ω]
E
[mJ]
I
C
[A]
E
on
E
off
I
C
=10A
V
CE
= 600 V
V
GE
=±15V
T
VJ
=125°C
R
G
=100
V
CE
=600V
V
GE
=±15V
T
VJ
=125°C
I
C
=10A
V
CE
=600V
V
GE
=15V
T
VJ
=125°C
T
VJ
=125°C
IXYS reserves the right to change limits, conditions and dimensions. 20110330a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
p h a s e - o u t
IXA12IF1200PC
preliminary
200 250 300 350 400 450 500
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
5
10
15
20
Qrr
[µC]
IF
[A]
VF[V] diF/dt [A/µs]
T
VJ
=125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
5A
10 A
20 A
egrahcyrevoceresreverlacipyT8.giFscitsiretcarahcdrawrof.pyT7.giF
Q
rr
versus. di
F
/dt (125°C)
200 250 300 350 400 450 500
0
4
8
12
16
20
24
IRR
[A]
diF/dt [A/µs]
T
VJ
= 125°C
V
R
=600 V
5A
10 A
20 A
Fig. 9 Typical peak reverse current
I
RR
versus di
F
/dt (125°C)
200 250 300 350 400 450 500
0
100
200
300
400
500
trr
[ns]
diF/dt [A/µs]
5A
10 A
20 A
T
VJ
=125°C
V
R
= 600 V
Fig. 10 Typ. recovery time t
rr
vs. di/dt (125°C
)
Fig. 11 Typ. recovery energy E
rec
vs. di
F
/dt (125°C)
200 250 300 350 400 450 500
0.1
0.2
0.3
0.4
0.5
0.6
Erec
[mJ]
diF/dt [A/µs]
T
VJ
=125°C
V
R
= 600 V
5A
10 A
20 A
IXYS reserves the right to change limits, conditions and dimensions. 20110330a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
p h a s e - o u t
