TGA4522 33 - 47 GHz Wide Band Driver Amplifier Key Features * * * * * * * * * Frequency Range: 33 - 47 GHz 27.5 dBm Nominal Psat @ 38GHz 27 dBm P1dB @ 38 GHz 36 dBm OTOI @ Pin = 19 dBm/Tone 18 dB Nominal Gain @ 38GHz 15 dB Nominal Return Loss @ 38GHz Bias: 6 V @ 400 mA Idq 0.15 um 3MI pHEMT Technology Chip Dimensions 2.00 x 1.45 x 0.10 mm (0.079 x 0.057 x 0.004 in) Primary Applications * * * * Digital Radio Point-to-Point Radio Point-to-Multipoint Communications Military SAT-COM Measured Fixtured Data Product Description The TriQuint TGA4522 is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint's 0.15um power pHEMT production process. The TGA4522 nominally provides 27.5 dBm saturated output power, and 27 dBm output power at 1dB Gain compression @ 38 GHz. It also has typical gain of 18 dB, and return loss of 15 dB. S-parameters (dB) Bias Conditions: Vd = 6 V, Idq = 400 mA The part is ideally suited for low cost emerging markets such as Digital Radio, Point-to-Point Radio and Point-to-Multi Point Communications. Gain IRL ORL 32 34 36 38 40 42 44 Frequency (GHz) 46 48 46 48 30 29 Pout (dBm) The TGA4522 is 100% DC and RF tested on-wafer to ensure performance compliance. Lead-Free & RoHS compliant. 25 20 15 10 5 0 -5 -10 -15 -20 -25 Psat 28 27 26 P1dB 25 24 23 22 32 34 36 38 40 42 44 Frequency (GHz) Datasheet subject to change without notice TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 1 TGA4522 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES 8V 2/ Vd Drain Voltage Vg Gate Voltage Range Id Drain Current 700 mA 2/ 3/ Ig Gate Current 16 mA 3/ PIN Input Continuous Wave Power 23 dBm PD Power Dissipation 4.2 W 2/ TCH Operating Channel Temperature 200 C 5/ 6/ Mounting Temperature (30 Seconds) 320 C TSTG -2 TO 0 V Storage Temperature -65 to 150 C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Total current for the entire MMIC. 4/ When operated at this bias condition (with RF applied) at a base plate temperature of 70 C, the median life is 7.3E+3 hrs. 5/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 2 TGA4522 TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER TYPICAL UNITS Frequency Range 33 - 47 GHz Drain Voltage, Vd 6.0 V Drain Current, Id 400 mA Gate Voltage, Vg -0.6 V Small Signal Gain, S21 18 dB Input Return Loss, S11 15 dB Output Return Loss, S22 15 dB Output Power @ 1dB Gain Compression, P1dB 26 dBm Saturated Power, Psat 27 dBm OTOI @ 19dBm/Tone 36 dBm TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 3 TGA4522 TABLE III THERMAL INFORMATION PARAMETER RJC Thermal Resistance (channel to Case) TEST CONDITIONS Vd = 6 V Idq = 400 mA Pdiss = 2.4 W TCH O ( C) RJC (C/W) Tm (HRS) 144 30.8 1.7E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier o at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. Median Lifetime (Tm) vs. Channel Temperature TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 4 TGA4522 Measured Data Bias Conditions: Vd = 5-6 V, Idq = 400 mA 20 5V 18 16 Gain (dB) 14 6V 12 10 8 6 4 2 0 30 32 34 36 38 40 42 44 46 48 50 46 48 50 Frequency (GHz ) Bias Conditions: Vd = 6 V, Idq = 400 mA 20 15 10 Return Loss (dB) 5 0 -5 -10 IRL -15 -20 ORL -25 -30 30 32 34 36 38 40 42 44 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 5 TGA4522 Measured Data Bias Conditions: Vd = 6 V, Idq = 400 mA 30 6V 29 Output Power @ 1dB Gain Compression (dBm) 5V 28 27 26 25 24 23 22 21 20 32 34 36 38 40 42 44 46 48 Fre que ncy (GHz) 30 6V Saturated Output Power (dBm) 29 5V 28 27 26 25 24 23 22 21 20 32 34 36 38 40 42 44 46 48 Fre que ncy (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 6 TGA4522 Measured Data Bias Conditions: Vd = 6 V, Idq = 400 mA 40 30 600 Pout Gain Ids Freq = 35 GHz 575 550 22 37 500 20 36 18 475 16 35 425 14 34 12 400 33 10 350 8 32 6 325 450 375 34 -8 -6 35 -4 36 -2 0 37 38 39 2 4 6 8 10 Frequency (GHz) Pin (dBm) 40 12 41 14 16 300 42 18 30 600 Pout Gain Ids 28 26 Output Power (dBm) Ids (mA) 525 Freq = 40 GHz 575 550 24 525 22 500 20 475 18 450 16 425 14 400 12 375 10 350 8 325 6 300 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Ids (mA) (dBm) OutputOTOI Power (dBm) 28 39 26 38 24 18 Pin (dBm) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 7 TGA4522 Measured Data Bias Conditions: Vd = 6 V, Idq = 400 mA, f=10MHz @ 19dBm/Tone 40 39 38 OTOI (dBm) 37 36 35 34 33 32 31 30 35 36 37 38 39 40 41 Frequency (GHz) 40 37GHz 38GHz 39GHz 40GHz 39 38 OTOI (dBm) 37 36 35 34 33 32 31 30 10 12 14 16 18 20 22 24 Output Power / T one (dBm) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 8 TGA4522 Measured Data Bias Conditions: Vd = 6 V, Idq = 400 mA, f=10MHz @ 19dBm/Tone -30 -31 -32 IMD3 (dBc) -33 -34 -35 -36 -37 -38 -39 -40 35 36 37 38 39 40 41 Frequency (GHz) 0 37GHz 38GHz 39GHz 40GHz -5 -10 IMD3 (dBc) -15 -20 -25 -30 -35 -40 -45 -50 10 12 14 16 18 20 22 24 Output Pow er / Tone (dBm) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 9 TGA4522 Mechanical Drawing 0.108 (0.004) 0.261 (0.010) 0.391 (0.015) 0.530 (0.021) 1.352 (0.053) 1.500 (0.059) 1.670 (0.066) 1.450 (0.057) 2 1.351 (0.053) 3 5 4 6 1.351 (0.053) 7 1.071 (0.042) 8 0.398 (0.016) 1 0.129 (0.005) 13 0.099 (0.004) 0 0 0.391 (0.015) 12 11 0.530 (0.021) 1.352 (0.053) 10 1.500 (0.059) 9 1.670 (0.066) RC B RC B 1.893 (0.075) 2.000 (0.079) Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND is back side of MMIC Bond pad #1 Bond pad #2 Bond pad #3, 13 Bond pad #4, 5, 7, 9, 11, 12 Bond pad #6, 10 Bond pad #8 (RF In) (N/C) (Vg) (Vd) (N/C) (RF Out) 0.100 x 0.150 0.100 x 0.108 0.108 x 0.108 0.108 x 0.108 0.091 x 0.084 0.100 x 0.150 (0.004 x 0.006) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.003) (0.004 x 0.006) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 10 TGA4522 Recommended Chip Assembly Diagram Vd 0.01F Vg 15 0.01F 15 100pF 100pF 100pF 1.0F 1.0F TFN (10mil Alumina) Wedge bonds or ribbons TFN (10mil Alumina) Vg 0.01F 100pF 100pF 100pF 15 Vd 0.01F 15 1.0F 1.0F To reduce these components (0.01F, 15, 1.0F) connect: Vg @ bottom to Vg @ top Vd @ bottom to Vd @ top Bias Conditions: Vd = 6 V Vg = ~ -0.6 V to get 400mA Id GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 11 TGA4522 Assembly Process Notes Reflow process assembly notes: * * * * * 0 Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 12