MPSW06RLRAG - ON SEMICONDUCTOR - Datasheet.Directory

August, 2010 − Rev. 4

1Publication Order Number:

MPSW05/D

MPSW05, MPSW06

One Watt Amplifier

Transistors

NPN Silicon

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage MPSW05

MPSW06

VCEO 60

Vdc

Collector−Base Voltage MPSW05

MPSW06

VCBO 60

Vdc

Emitter−Base Voltage VEBO 4.0 Vdc

Collector Current − Continuous IC500 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

PD1.0

8.0

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD2.5

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W

Thermal Resistance, Junction−to−Case RqJC 50 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MPSW06RLRA TO−92 2000/Tape & Reel

MPSW06RLRAG TO−92

(Pb−Free)

2000/Tape & Reel

MPSW06G TO−92

(Pb−Free)

5000 Units/Bulk

Device Package Shipping†

MPSW05G TO−92

(Pb−Free)

5000 Units/Bulk

COLLECTOR

BASE

EMITTER

ORDERING INFORMATION

x = 5 or 6

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

MPS

W0x

AYWW G

123

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

TO−92 1 WATT

(TO−226)

CASE 29−10

STYLE 1

MPSW05, MPSW06

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0) MPSW05

MPSW06

V(BR)CEO 60

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

V(BR)EBO 4.0 −Vdc

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0) MPSW05

(VCE = 60 Vdc, IB = 0) MPSW06

ICES

−

0.5

mAdc

Collector Cutoff Current

(VCB = 40 Vdc, IE = 0) MPSW05

(VCB = 60 Vdc, IE = 0) MPSW06

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

IEBO

−0.1

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 250 mAdc, VCE = 1.0 Vdc)

hFE 80

−

Collector−Emitter Saturation Voltage

(IC = 250 mAdc, IB = 10 mAdc)

VCE(sat)

−0.4

Vdc

Base−Emitter Saturation Voltage

(IC = 250 mAdc, VCE = 5.0 Vdc)

VBE(sat)

−1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz)

fT50 −

MHz

Output Capacitance

(VCB = 10 V, f = 1.0 MHz)

Cobo

−12

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

200

100

hFE, DC CURRENT GAIN

TJ = 125°C

25°C

-55°C

VCE = 1.0 V

300 500

MPSW05, MPSW06

http://onsemi.com

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0.1 101.0

TJ = 25°C

IC = 10 mA

0.05 0.2 0.5 2.0 5.0 20

100 mA 250 mA

500 mA

IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

V, VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0.5 1.0 20020

TJ = 25°C

VBE(on) @ VCE = 1.0 V

VCE(sat) @ IC/IB = 10

5.0 10 50 100

VBE(sat) @ IC/IB = 10

2.0 500

IC, COLLECTOR CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

-0.8

-2.8

1.0 10010

θVB for VBE

0.5 2.0 5.0 20 50 200

-1.2

-1.6

-2.0

-2.4

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

500

C, CAPACITANCE (pF)

Figure 5. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

1005020105.02.01.00.50.20.1

4.0

TJ = 25°C

Cobo

Cibo

8.0

6.0

Figure 6. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

20070503020107.05.03.02.0

300

200

100

VCE = 2.0 V

TJ = 25°C

f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

2 k

1.0

IC, COLLECTOR CURRENT (mA)

MPSW05

2.0 5.0

Figure 7. Active Region − Safe Operating Area

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

500

200

100

10 20 60 80 100

MPSW06

100 ms

1.0 ms

1.0 s

TC = 25°C

TA = 25°C

dcdc

1 k

DUTY CYCLE ≤ 10%

MPSW05, MPSW06

http://onsemi.com

PACKAGE DIMENSIONS

TO−92 (TO−226) 1 WATT

CASE 29−10

ISSUE O

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS

UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN DIMENSIONS P

AND L. DIMENSIONS D AND J APPLY BETWEEN DI

MENSIONS L AND K MINIMUM. THE LEAD

DIMENSIONS ARE UNCONTROLLED IN DIMENSION

P AND BEYOND DIMENSION K MINIMUM.

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS

UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN DIMENSIONS P

AND L. DIMENSIONS D AND J APPLY BETWEEN

DIMENSIONS L AND K MINIMUM. THE LEAD

DIMENSIONS ARE UNCONTROLLED IN DIMENSION

P AND BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.44 5.21

B0.290 0.310 7.37 7.87

C0.125 0.165 3.18 4.19

D0.018 0.021 0.46 0.53

F0.016 0.019 0.41 0.48

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.018 0.024 0.46 0.61

K0.500 --- 12.70 ---

L0.250 --- 6.35 ---

N0.080 0.105 2.04 2.66

P--- 0.100 --- 2.54

R0.135 --- 3.43 ---

V0.135 --- 3.43 ---

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.44 5.21

B0.290 0.310 7.37 7.87

C0.125 0.165 3.18 4.19

D0.018 0.021 0.46 0.53

G0.094 0.102 2.40 2.80

J0.018 0.024 0.46 0.61

K0.500 --- 12.70 ---

N0.080 0.105 2.04 2.66

P--- 0.100 --- 2.54

R0.135 --- 3.43 ---

V0.135 --- 3.43 ---

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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MPSW05/D

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