MPSW05, MPSW06 One Watt Amplifier Transistors NPN Silicon http://onsemi.com Features * Pb-Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage MPSW05 MPSW06 VCEO 60 80 Vdc Collector -Base Voltage MPSW05 MPSW06 VCBO 60 80 Vdc VEBO 4.0 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.0 8.0 W mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 2.5 20 W mW/C TJ, Tstg -55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 125 C/W Thermal Resistance, Junction-to-Case RqJC 50 C/W Emitter -Base Voltage Operating and Storage Junction Temperature Range 1 EMITTER 1 12 3 STRAIGHT LEAD BULK PACK 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM THERMAL CHARACTERISTICS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 TO-92 1 WATT (TO-226) CASE 29-10 STYLE 1 MPS W0x AYWW G G x = 5 or 6 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MPSW05G TO-92 (Pb-Free) 5000 Units/Bulk MPSW06G TO-92 (Pb-Free) 5000 Units/Bulk TO-92 2000/Tape & Reel TO-92 (Pb-Free) 2000/Tape & Reel MPSW06RLRA MPSW06RLRAG *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2010 August, 2010 - Rev. 4 1 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPSW05/D MPSW05, MPSW06 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 - - 4.0 - - - 0.5 0.5 - - 0.1 0.1 - 0.1 80 60 - - - 0.4 - 1.2 50 - - 12 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) MPSW05 MPSW06 Emitter -Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)CEO V(BR)EBO Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) MPSW05 MPSW06 Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) MPSW05 MPSW06 ICES ICBO Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 250 mAdc, VCE = 1.0 Vdc) Collector -Emitter Saturation Voltage (IC = 250 mAdc, IB = 10 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 250 mAdc, VCE = 5.0 Vdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS fT Current -Gain - Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo MHz pF 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 400 hFE , DC CURRENT GAIN TJ = 125C VCE = 1.0 V 200 25C -55C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 2 50 70 100 200 300 500 1.0 1.0 TJ = 25C TJ = 25C 0.8 0.8 IC = 10 mA 0.6 50 mA 100 mA 250 mA V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MPSW05, MPSW06 500 mA 0.4 0.2 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.05 0.1 0.2 0.5 2.0 5.0 1.0 IB, BASE CURRENT (mA) 10 20 0 0.5 50 1.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 500 80 -0.8 TJ = 25C 60 -1.2 40 -1.6 VB for VBE -2.0 -2.4 Cibo 20 10 8.0 6.0 -2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 Cobo 4.0 0.1 500 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Base-Emitter Temperature Coefficient 50 100 Figure 5. Capacitance 300 200 VCE = 2.0 V TJ = 25C IC, COLLECTOR CURRENT (mA) f, T CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) 200 Figure 3. "On" Voltages C, CAPACITANCE (pF) VB, TEMPERATURE COEFFICIENT (mV/C) Figure 2. Collector Saturation Region 2.0 100 70 50 DUTY CYCLE 10% 2k 1.0 ms 1k 100 ms 500 TA = 25C 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 10 1.0 200 Figure 6. Current-Gain - Bandwidth Product TC = 25C 1.0 s dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW05 MPSW06 2.0 5.0 10 20 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Active Region - Safe Operating Area http://onsemi.com 3 MPSW05, MPSW06 PACKAGE DIMENSIONS TO-92 (TO-226) 1 WATT CASE 29-10 ISSUE O A B R STRAIGHT LEAD BULK PACK P L F K D X X G J H V C SECTION X-X N 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A BENT LEAD TAPE & REEL AMMO PACK R B P T SEATING PLANE G K D X X J V 1 C N SECTION X-X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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