Preliminary BTA08-600B SemiWell Semiconductor UL : E228720 Bi-Directional Triode Thyristor Symbol 2.T2 Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 8 A ) 1.T1 High Commutation dv/dt Isolation Voltage ( VISO = 1500V AC ) 3.Gate TO-220F General Description This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. This device is approved to comply with applicable requirements by Underwriters Laboratories Inc. Absolute Maximum Ratings Symbol 1 2 3 ( TJ = 25C unless otherwise specified ) Parameter Condition Ratings Units 600 V 8.0 A 80/88 A I2 t 32 A2 s Peak Gate Power Dissipation 5.0 W Average Gate Power Dissipation 0.5 W IGM Peak Gate Current 2.0 A VGM Peak Gate Voltage 10 V VISO Isolation Breakdown Voltage(R.M.S.) 1500 V Operating Junction Temperature - 40 ~ 125 C Storage Temperature - 40 ~ 150 C 2.0 g VDRM Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current TC = 89 C ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive I2 t PGM PG(AV) TJ TSTG A.C. 1 minute Mass Mar, 2004. Rev. 0 1/6 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. BTA08-600B Electrical Characteristics Symbol Conditions Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 C 2.0 mA VTM Peak On-State Voltage IT = 12 A, Inst. Measurement 1.4 V 30 30 I+GT1 I -GT1 I -GT3 30 V+GT1 1.5 V-GT1 1.5 V-GT3 1.5 VGD (dv/dt)c IH Rth(j-c) 2/6 Items Gate Trigger Current Gate Trigger Voltage VD = 6 V, RL=10 VD = 6 V, RL=10 mA V Non-Trigger Gate Voltage TJ = 125 C, VD = 1/2 VDRM 0.2 V Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 C, [di/dt]c = -4.0 A/ms, VD=2/3 VDRM 10 V/ 15 mA 3.7 C/W Holding Current Thermal Impedance Junction to case BTA08-600B Fig 1. Gate Characteristics Fig 2. On-State Voltage 2 10 VGM (10V) 1 On-State Current [A] PGM (5W) PG(AV) (0.5W) 25 IGM (2A) Gate Voltage [V] 10 0 10 o TJ = 125 C 1 10 o TJ = 25 C 0 10 VGD (0.2V) -1 10 1 2 10 0.5 3 10 10 1.0 1.5 10 = 180 o = 150 o = 120 2 7 360 6 : Conduction Angle 5 = 90 o = 60 o = 30 Allowable Case Temperature [ oC] Power Dissipation [W] o 4 3 2 1 3.5 120 110 = 30 100 o o = 60 o = 90 o = 120 o = 150 o = 180 2 360 90 : Conduction Angle 80 0 0 1 2 3 4 5 6 7 8 9 0 10 1 2 3 RMS On-State Current [A] 4 5 6 7 8 9 10 RMS On-State Current [A] Fig 6. Gate Trigger Voltage vs. Junction Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 10 100 80 V o 40 50Hz V o 60 VGT (25 C) 60Hz VGT (t C) Surge On-State Current [A] 3.0 130 o 8 2.5 Fig 4. On State Current vs. Allowable Case Temperature Fig 3. On State Current vs. Maximum Power Dissipation 9 2.0 On-State Voltage [V] Gate Current [mA] V 1 + GT1 _ GT1 _ GT3 20 0 0 10 1 10 Time (cycles) 2 10 0.1 -50 0 50 100 150 o Junction Temperature [ C] 3/6 BTA08-600B Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance 10 o o IGT (t C) IGT (25 C) o Transient Thermal Impedance [ C/W] 10 I 1 I I 0.1 -50 0 50 + GT1 _ GT1 _ GT3 100 1 0.1 -2 10 150 -1 0 10 o 1 10 10 Time (sec) Junction Temperature [ C] Fig 9. Gate Trigger Characteristics Test Circuit 10 10 6V A V 4/6 10 6V RG A V 6V RG A V Test Procedure Test Procedure Test Procedure RG 2 10 BTA08-600B TO-220F Package Dimension Dim. mm Typ. Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57 A B C D E F G H I J K L M N O Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83 Inch Typ. Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101 2.54 5.08 0.100 0.200 2.51 1.25 0.45 0.6 2.62 1.55 0.63 1.0 1 2 0.099 0.049 0.018 0.024 0.103 0.061 0.025 0.039 3.7 3.2 1.5 0.146 0.126 0.059 A E F Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111 I H B 1 C 2 L G M 1 2 D 1. T1 2. T2 3. Gate 3 J N O K 5/6 BTA08-600B TO-220F Package Dimension, Forming Dim. mm Typ. Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57 A B C D E F G H I J K L M N O P Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83 Inch Typ. Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101 2.54 5.08 0.100 0.200 2.51 1.25 0.45 0.6 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024 0.103 0.061 0.025 0.039 5.0 3.7 3.2 1.5 1 2 0.197 0.146 0.126 0.059 A E F I H B 1 C 2 L G M 1 D 2 3 N O J P K 6/6 Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111 1. T1 2. T2 3. Gate