Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol Parameter Condition Ratings Units
VDRM Repetitive Peak Off-State Voltage 600 V
IT(RMS) R.M.S On-State Current TC = 89 °C 8.0 A
ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive 80/88 A
I2tI2t32 A2s
PGM Peak Gate Power Dissipation 5.0 W
PG(AV) Average Gate Power Dissipation 0.5 W
IGM Peak Gate Current 2.0 A
VGM Peak Gate Voltage 10 V
VISO Isolation Breakdown Voltage(R.M.S.) A.C. 1 minute 1500 V
TJOperating Junction Temperature - 40 ~ 125 °C
TSTG Storage Temperature - 40 ~ 150 °C
Mass 2.0 g
BTA08-600B
Mar, 2004. Rev. 0
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-Sta te Current ( IT(RMS)= 8 A )
◆ High Commutation dv/dt
◆ Isolation Voltage ( VISO = 1500V AC )
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable require-
ments by Underwriters Laboratories Inc.
2.T2
3.Gate
1.T1
Symbol
○
○
○
TO-220F
▼
▲
1/6
123
SemiWell Semiconductor
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
UL : E228720
Preliminary
Electrical Characteristics
Symbol Items Conditions
Ratings
Unit
Min. Typ. Max.
IDRM Repetitive Peak Off-State
Current VD = VDRM, Single Phase, Half Wave
TJ = 125 °C ──
2.0 mA
VTM Peak On-State Voltage IT = 12 A, Inst. Measurement ──1.4 V
I+GT1 Ⅰ
Gate Trigger Current VD = 6 V, RL=10 Ω
──
30
mA
I -GT1 Ⅱ──
30
I -GT3 Ⅲ──
30
V+GT1 Ⅰ
Gate Trigger Voltage VD = 6 V, RL=10 Ω
──
1.5
V
V-GT1 Ⅱ──
1.5
V-GT3 Ⅲ──
1.5
VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 ── V
(dv/dt)c Critical Rate of Rise Off-State
Voltage at Commutation TJ = 125 °C, [di/dt]c = -4.0 A/ms,
VD=2/3 VDRM 10 ──
V/㎲
IHHolding Current ─15 ─mA
Rth(j-c) Thermal Impedance Junction to case ──
3.7 °C/W
BTA08-600B
2/6
-50 0 50 100 150
0.1
1
10
V +
GT1
V _
GT1
V _
GT3
VGT (t oC)
VGT (25 oC)
Junction Temperature [ oC]
100101102
0
20
40
60
80
100
60Hz
50Hz
Surge On-State Current [A]
Time (cycles)
012345678910
80
90
100
110
120
130
θ= 90
o
θ= 150
o
θ= 60
o
θ= 30
o
θ= 180
o
θ= 120
o
Allowable Case Temperature [ oC]
RMS O n-State Cu rre nt [A]
012345678910
0
1
2
3
4
5
6
7
8
9
10
θ= 90
o
θ= 150
o
θ= 60
o
θ= 30
o
θ= 180
o
θ= 120
o
Power Dissipation [W]
RMS On - Sta te Cu rr e nt [A]
0.5 1.0 1.5 2.0 2.5 3.0 3.5
100
101
102
TJ = 125 oC
TJ = 25 oC
On-State Current [A]
O n -State Volta g e [V]
101102103
10-1
100
101
VGD (0.2V)
IGM (2A)
25 ℃
PG(AV) (0.5W)
PGM (5W)
VGM (10V)
Gate Voltage [V]
G a te Cu rrent [m A]
3/6
Fig 1. Gate Characteristics Fig 2. On-State Voltage
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
θ
θ
2
π
360°
π
θ
: Conduction Angle
θ
θ
2
π
360°
π
θ
: Conduction Angle
BTA08-600B
-50 0 50 100 150
0.1
1
10
I _
GT3
I +
GT1
I _
GT1
IGT (t oC)
IGT (25 oC)
Junction Temperature [ oC]
10-2 10-1 100101102
0.1
1
10
Transient Ther mal Impedance [ oC/W]
Time (sec)
4/6
Fig 8. Transient Thermal Impedance
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 9. Gate Trigger Characteristics Test Circuit
▼
▲A
V
10Ω
6V RG
●
●
▼
▲A
V
10Ω
6V RG
●
●
▼
▲A
V
10Ω
6V RG
●
●
Test Procedure ⅠTest Procedure ⅡTest Procedure Ⅲ
BTA08-600B
Dim. mm Inch
Min. Typ. Max. Min. Typ. Max.
A 10.4 10.6 0.409 0.417
B 6.18 6.44 0.243 0.254
C 9.55 9.81 0.376 0.386
D 13.47 13.73 0.530 0.540
E 6.05 6.15 0.238 0.242
F 1.26 1.36 0.050 0.054
G 3.17 3.43 0.125 0.135
H 1.87 2.13 0.074 0.084
I 2.57 2.83 0.101 0.111
J2.54 0.100
K5.08 0.200
L 2.51 2.62 0.099 0.103
M 1.25 1.55 0.049 0.061
N 0.45 0.63 0.018 0.025
O 0.6 1.0 0.024 0.039
φ
3.7 0.146
φ
13.2 0.126
φ
21.5 0.059
TO-220F Package Dimension
1. T1
2. T2
3. Gate
A
B
C
I
GL
1M
E
F
φ
1
H
K
NO
2
3
J
D
5/6
φ
2
φ
BTA08-600B
Dim. mm Inch
Min. Typ. Max. Min. Typ. Max.
A 10.4 10.6 0.409 0.417
B 6.18 6.44 0.243 0.254
C 9.55 9.81 0.376 0.386
D 8.4 8.66 0.331 0.341
E 6.05 6.15 0.238 0.242
F 1.26 1.36 0.050 0.054
G 3.17 3.43 0.125 0.135
H 1.87 2.13 0.074 0.084
I 2.57 2.83 0.101 0.111
J2.54 0.100
K5.08 0.200
L 2.51 2.62 0.099 0.103
M 1.25 1.55 0.049 0.061
N 0.45 0.63 0.018 0.025
O 0.6 1.0 0.024 0.039
P 5.0 0.197
φ
3.7 0.146
φ
13.2 0.126
φ
21.5 0.059
TO-220F Package Dimension, Forming
1. T1
2. T2
3. Gate
A
B
C
I
G
L
1M
E
F
φ
1
H
K
N
O
2
3
J
D
φ
2
φ
P
6/6
BTA08-600B
