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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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FSV1060V 10 A, 60 V Ultra-Low VF Schottky Rectifier Features Description * Ultra-Low Forward Voltage Drop: - 0.47 V Typical at 10 A, TA = 25C - 0.52 V Maximum at 10 A, TA = 25C * Low Thermal Resistance * Very Low Profile: Typical Height of 1.1 mm * RoHS Compliant * Halogen Free * Meets MSL 1 per JESD22-A111 Full-Body Solder Immersion The FSV1060V schottky rectifier offers break-through size and performance. The device is optimized for mobile charger applications. It sinks only 13 mA reverse current at high temperature and provides forward voltage drop of 0.2 V at 1 A operating current in a charger design. All this capability is packed into a small, flat-lead, TO-277 package, optimized for space-constrained applications. The FSV1060V supports a typical Z height of 1.1 mm. It is RoHS compliant and halogen free. It is also qualified for a wave soldering process. Applications 3 * Mobile Charger * Solar Panel * Reverse Polarity Protection 2 TO-277 1 3 Cathode Anode 1 Anode 2 Ordering Information Part Number Top Mark Package Packing Method FSV1060V FSV1060V TO-277 3L Tape and Reel (c) 2014 Fairchild Semiconductor Corporation FSV1060V Rev. 1.2 www.fairchildsemi.com FSV1060V -- 10 A, 60 V Ultra-Low VF Schottky Rectifier May 2015 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 60 V VRWM Working Peak Reverse Voltage 60 V VRMS RMS Reverse Voltage 42 V 60 V 10 A 280 A VR DC Blocking Voltage IO Average Rectified Output Current(2) TL = 90C Non-Repetitive Peak Forward Surge Current IFSM (3) CJ Typical Junction Capacitance 550 pF TJ Operating Junction Temperature Range -55 to +150 C Storage Temperature Range -55 to +150 C TSTG VR = 4 V, 1 MHz Notes: 1. All tests conducted at TA = TJ = 25C unless otherwise noted. 2. Mounted on 30 mm x 30 mm FR4 PCB. 3. Pulse condition: 8.3 ms single half-sine wave. Test method is compliant with MIL standard. (MIL-STD-750E) Thermal Characteristics(4) Values are at TA = 25C unless otherwise noted. Symbol RJA JL Minimum Maximum Land Pattern Land Pattern Parameter Junction-to-Ambient Thermal Resistance 105 38 Junction-to-Lead Thermal Characteristics, Thermocouple Soldered to Anode 18 13 Junction-to-Lead Thermal Characteristics, Thermocouple Soldered to Cathode 8 Unit C/W C/W 5 Note: 4. The thermal resistances (RJA & JL) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils. F S F S F S F S F S Figure 1. Minimum Land Pattern of 2 oz Copper (c) 2014 Fairchild Semiconductor Corporation FSV1060V Rev. 1.2 Figure 2. Maximum Land Pattern of 2 oz Copper www.fairchildsemi.com 2 FSV1060V -- 10 A, 60 V Ultra-Low VF Schottky Rectifier Absolute Maximum Ratings(1) Values are at TA = 25C unless otherwise noted. Symbol VBR Parameter Breakdown Voltage Conditions IT = 500 A IF = 1 A VF Forward Voltage Drop IF = 10 A IF = 1 A IF = 10 A IR Maximum Leakage (c) 2014 Fairchild Semiconductor Corporation FSV1060V Rev. 1.2 V = VRWM Min. Typ. Max. 60 TA = 25C TA = 125C Unit V 0.30 0.47 0.52 0.20 V 0.46 TA = 25C 0.056 TA = 125C 13 0.220 mA www.fairchildsemi.com 3 FSV1060V -- 10 A, 60 V Ultra-Low VF Schottky Rectifier Electrical Characteristics 100000 TA = 150oC 10000 Reverse Current, IR[uA] Forward Current, IF [A] 10 1 TA = 125oC TA = -55oC 0.1 TA = 85oC TA = 25oC 0.01 1000 o 10 TA=150 C o o TA=125 C TA=85 C 100 o TA=25 C 1 0.1 0.01 0.0 0.1 0.2 0.3 0.4 o TA=-55 C 1E-3 10 0.001 0.5 15 20 Forward Voltage, VF [V] 30 35 40 45 50 55 60 Reverse Voltage, VR[V] Figure 3. Forward Current Characteristics Figure 4. Typical Reverse Characteristics 12 Average Current, [A] 10000 Junction Capacitance, CJ[pF] 25 1000 jl (30mm x 30mm Pad) 10 8 jl (Min. Pad) 6 4 ja (30mm x 30mm Pad) 2 ja (Min. Pad) 100 1 10 0 100 Reverse Voltage, VR[V] Peak Forward Surge Current, IFSM[A] Figure 5. Typical Junction Capacitance 0 25 50 75 100 125 150 o Ambient / Lead Temperature, [ C] 175 Figure 6. Forward Current Derating Curve 300 250 200 150 100 50 0 0 20 40 60 80 100 Number of Cycles Figure 7. Surge Current Derating Curve (c) 2014 Fairchild Semiconductor Corporation FSV1060V Rev. 1.2 www.fairchildsemi.com 4 FSV1060V -- 10 A, 60 V Ultra-Low VF Schottky Rectifier Typical Performance Characteristics A 6.65 6.35 6.15 5.67 B 4.63 D 4.25 0.63 0.43 (2X) TOP VIEW SEATING PLANE 0.01 4.65 MIN 1.40 1.10 (2X) 1.45 MIN 4.15 MIN 0.40 0.23 1.97 1.15 MIN 1.00 2.75 LAND PATTERN RECOMMENDATION 1.20 1.00 FRONT VIEW (0.35) C D 4.90 4.23 1.25 0.90 2.20 2.00 4.15 2.25 D 3.25 1.95 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE REFERENCE: JEDEC TO-277 B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. C. ALL DIMENSIONS ARE IN MILLIMETERS. D DOES NOT COMPLY TO JEDEC STANDARD VALUE. E. DRAWING FILENAME: MKT-TO277A03rev5 0.913 3.680 (0.25) BOTTOM VIEW 0.60 DAP OPTION 4.75 MAX BOTTOM VIEW - DAP OPTION ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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