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Is Now Part of
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FSV1060V — 10 A, 60 V Ultra-Low VF Schottky Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSV1060V Rev. 1.2
May 2015
FSV1060V
10 A, 60 V Ultra-Low VF Schottky Rectifier
Features
• Ultra-Low Forward Voltage Drop:
- 0.47 V Typical at 10 A, TA = 25°C
- 0.52 V Maximum at 10 A, TA = 25°C
• Low Thermal Resistance
• Very Low Profile: Typical Height of 1.1 mm
• RoHS Compliant
• Halogen Free
• Meets MSL 1 per JESD22-A111 Full-Body Solder
Immersion
Applications
• Mobile Charger
• Solar Panel
• Reverse Polarity Protection
Ordering Information
Part Number Top Mark Package Packing Method
FSV1060V FSV1060V TO-277 3L Tape and Reel
1
3
TO-277
2
Anode 2
Anode 1
3
Cathode
Description
The FSV1060V schottky rectifier offers break-through
size and performance. The device is optimized for mobile
charger applications. It sinks only 13 mA reverse current
at high temperature and provides forward voltage drop of
0.2 V at 1 A operating current in a charger design.
All this capability is packed into a small, flat-lead, TO-277
package, optimized for space-constrained applications.
The FSV1060V supp orts a typical Z height of 1.1 mm. It is
RoHS compliant and halo gen fre e. It is also quali fied fo r a
wave soldering process.
FSV1060V — 10 A, 60 V Ultra-Low VF Schottky Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSV1060V Rev. 1.2 2
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. All tests conducted at TA = TJ = 25°C unless otherwise noted.
2. Mounted on 30 mm x 30 mm FR4 PCB.
3. Pulse condition: 8.3 ms single half-sine wave. Test method is compliant with MIL standard. (MIL-STD-750E)
Thermal Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Note:
4. The thermal resistances (RθJA & ψJL) are characterized with device mounted on the following FR4 printed circuit
boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm
(big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2).
Force line trace size = 55 mils, sense line trace size = 4 mils.
Symbol Parameter Value Unit
VRRM Peak Repetitive Reverse Voltage 60 V
VRWM Working Peak Reverse Vol tage 60 V
VRMS RMS Reverse Voltage 42 V
VRDC Blocking Voltage 60 V
IOAverage Rectified O utput Current(2) TL = 90°C 10 A
IFSM Non-Repetitive Peak Forward Surge Current(3) 280 A
CJTy pical Junction Capacitance VR = 4 V, 1 MHz 550 pF
TJOperating Junction Temperature Rang e -55 to +150 °C
TSTG Storage Temperature Range -55 to +150 °C
Symbol Parameter Minimum
Land Pattern Maximum
Land Pattern Unit
RθJA Junction-to-Ambient Thermal Resistance 105 38 °C/W
ψJL
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Anode 18 13
°C/W
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Cathode 85
Figure 1. Minimum Land Pattern of 2 oz Copper Figure 2. Maximum Land Pattern of 2 oz Copper
F
S
F
S
F
S
F
S
F
S
FSV1060V — 10 A, 60 V Ultra-Low VF Schottky Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSV1060V Rev. 1.2 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
VBR Breakdown Voltage IT = 500 μA60 V
VFForward Voltage Drop
IF = 1 A TA = 25°C0.30
V
IF = 10 A 0.47 0.52
IF = 1 A TA = 125°C0.20
IF = 10 A 0.46
IRMaximum Leakage V = VRWM TA = 25°C 0.056 0.220 mA
TA = 125°C13
FSV1060V — 10 A, 60 V Ultra-Low VF Schottky Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSV1060V Rev. 1.2 4
Typical Performance Characteristics
Figure 3. Forward Current Characteristics Figure 4. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance Figure 6. Forward Current Derating Curve
Figure 7. Surge Current Derating Curve
Forward Current, IF [A]
0.001
0.01
0.1
1
10
0.0 0.1 0.2 0.3 0.4 0.5
Forward Voltage, VF [V]
TA= 25oC
TA= -55oC
TA= 85oC
TA= 125oC
TA= 150oC
10 15 20 25 30 35 40 45 50 55 60
1E-3
0.01
0.1
1
10
100
1000
10000
100000
TA=150oC
TA=125oC
TA=25oC
TA=85oC
Reverse Current, IR[uA]
Reve rse Voltage, VR[V]
TA=-55oC
110100
100
1000
10000
Junction Capacitance, CJ[pF]
Reverse Voltage, VR[V]
0 25 50 75 100 125 150 175
0
2
4
6
8
10
12
ψjl (30mm x 30mm Pad)
θja (30mm x 30mm Pad)
Average Current, [A]
A mbient / Lead Temperature, [oC]
θja (Min. Pad)
ψjl (Min. Pad)
0 20406080100
0
50
100
150
200
250
300
Peak Forward Surge Current, IFSM[A]
Number of Cycles
1.15 MIN
4.15 MIN
1.97
1.45 MIN
4.65 MIN
2.75
1.00
(0.35)
1.20
1.00
0.40
0.23
0.01
SEATING
PLANE
C
6.65
6.35
6.15
5.67
4.63
4.25
1.40
1.10
(2X)
0.63
0.43
(2X)
AB
2.25
1.95 4.15
3.25 2.20
2.00
1.25
0.90
D
4.90
4.23
(0.25)
3.680
0.913
4.75 MAX
0.60
DAP OPTION
NOTES: UNLESS OTHERWISE SPECIFIED
A. PACKAGE REFERENCE: JEDEC TO-277
B. DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH, AND TIE BAR
EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D
DOES NOT COMPLY TO JEDEC
STANDARD VALUE.
E. DRAWING FILENAME: MKT-TO277A03rev5
TOP VIEW
LAND PATTERN RECOMMENDATION
BOTTOM VIEW - DAP OPTION
FRONT VIEW
BOTTOM VIEW
D
D
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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