SOT23 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 3 SEPTEMBER 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE BCV26 - BCV27
BCV46 - BCV47
PARTMARKING DETAILS BCV26 - ZFD
BCV46 - ZFE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCV26 BCV46 UNIT
Collector-Base Voltage VCBO -40 -80 V
Collector-Emitter Voltage VCEO -30 -60 V
Emitter-Base Voltage VEBO -10 V
Peak Pulse Current ICM -800 mA
Continuous Collector Current IC-500 mA
Base Current IB-100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL BCV26 BCV46 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO -40 -80 VIC
=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -30 -60 VIC
=10mA *
Emitter-Base
Breakdown Voltage
V(BR)EBO -10 -10 VIE=10µA
Collector Cut-Off
Current
ICBO -100
-10
-100
-10
nA
nA
µA
µA
VCB = -30V
VCB = -60V
VCB=-30V,Tamb
=150oC
VCB=-60V,Tamb
=150oC
Emitter Base
Cut-Off Current
IEBO -100 -100 nA VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat) -1.0 -1.0 VIC
=-100mA,IB
=-0.1mA*
Base-Emitter
Saturation Voltage
VBE(sat) -1.5 -1.5 VIC
=-100mA,IB
=-0.1mA*
Static Forward Current
Transfer Ratio
hFE 4K
10K
20K
4K
2K
4K
10K
2K
IC
=-100µΑ, VCE=-1V
IC
=-10mA, VCE=-5V*
IC
=-100mA, VCE=-5V*
IC
=-500mA, VCE=-5V*
Transition Frequency fT200 Typical 200 Typical MHz IC
=-50mA, VCE=-5V
f = 20MHz
Output Capacitance Cobo 4.5 Typical 4.5 Typical pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for these devices Periodic Sample Test Only.
BCV26
BCV46
C
B
E
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