MMBT2907AT COLLECTOR PNP General Purpose Transistors 3 3 1 1 2 BASE SOT-523(SC-75) 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Value -60 -60 -5.0 -600 Symbol VCEO VCBO VEBO IC Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Symbol Max PD 150 Thermal Resistance, Junction to Ambient RJA 833 C/W Junction and Storage, Temperature TJ,Tstg -55 to +150 C Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Unit mW DEVICE MARKING MMBT2907AT=2F ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) (2) V(BR)CEO -60 - Vdc Collector-Base Breakdown Voltage (IC= -10 Adc, IE=0) V(BR)CBO -60 - Vdc Emitter-Base Breakdown Voltage (IE= -10 Adc, IC=0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (VCB= -50 Vdc, IE=0) ICBO - -10 nAdc Emitter Cutoff Current (VEB= -4 Vdc, IC=0) IEBO - -10 nAdc OFF CHARACTERISTICS 1.FR-5=1.0 x 0.75 x 0.062 in 2. Pulse Test:Pulse Width=300 us, Duty Cycle <_2.0% WEITRON http://www.weitron.com.tw MMBT2907AT ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS (1) DC Current Gain (I C = -0.1 mAdc, VCE= -10 Vdc) hFE 75 - - (I C = -1.0 mAdc, VCE = -10 Vdc) 100 - - (IC = -10 mAdc, V CE = -10 Vdc) 100 - - (IC = -150 mAdc, VCE= -10 Vdc) 100 - 300 (IC = -500 mAdc, VCE = -10 Vdc) 50 - - - - -0.4 -1.6 Vdc - Collector-Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15mAdc) (IC = -500 mAdc, IB = -50mAdc) VCE(sat) Base-Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15mAdc) (I C= -500 mAdc, IB = -50mAdc) VBE(sat) - - -1.3 -2.6 Vdc - fT - 140 - MHz CoBo - - 5.0 pF SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (1) (IC = -2.0 mAdc, VCE=-12Vdc, f=30MHz) Output Capacitance (VCB= -12 Vdc, IE =0, f=1.0MHz) ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time (VCC = -30 Vdc, I C= -150 mAdc, IB1= -15 mAdc) Turn-Out Time Storage Time Fall Time WEITRON http://www.weitron.com.tw (VCC = -60 Vdc, IC= -150 mAdc, IB1=IB2= -15 mAdc) t on - 45 td - 10 tr - 40 t off - 100 ts - 80 tf - 30 ns 500 VCE=5V 400 125 C 300 25 C 200 100 -40 C 0 0.1 0.3 1 3 10 30 100 300 VCEBAT COLLECTOR EMITTER VOLTAGE (V) hFE TYPICAL PULSED CURRENT GAIN MMBT2907AT 0.5 b=10 0.4 0.3 25 C 0.2 125 C 0.1 -40 C 0 1 25 C 0.6 125 C 0.4 b=10 0.2 1 10 100 500 VBEON BASE EMITTER ON VOLTAGE (V) -40 C 500 1 0.8 -40 C 25 C 0.6 125 C 0.4 VCE=5V 0.2 0 0.1 1 10 Ic-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) FIG.3 Base-Emitter Saturation Voltage vs Collector Current FIG.4 Base Emitter ON Voltage vs Collector Current 100 25 20 VCB=35V CAPACITANCE (pF) VBEST BASE EMITTER VOLTAGE (V) ICBO-COLLECTOR CUREENT (nA) 1 0 100 FIG.2 Collector-Emitter Saturation Voltage vs collector Current FIG.1 Typical Pulsed Current Gain vs Collector Current 0.8 10 IC COLLECTOR CURRENT(mA) IC COLLECTOR CURRENT(mA) 10 1 0.1 0.01 25 50 75 100 TA- AMBIENT TEMPERATURE ( C) FIG.5 Collector-Cutoff Current vs. Ambient Temperature WEITRON http://www.weitron.com.tw 125 16 12 Cib 8 Cob 4 0 -0.1 -1 -10 REVERSE BIAS VOLTAGE (V) FIG.6 Input and Output Capacitance vs Reverse Bias Voltage -50 MMBT2907AT 500 250 I IB1=IB2= c 10 400 TIME (nS) VCC=15V VCC=15V ts 150 TIME (nS) 200 100 tr 50 10 300 200 t off tf 100 t on td 0 I IB1=IB2= c 10 100 0 10 1000 100 IB1 TURN ON BASE CURRENT (mA) FIG.7 Switching Times vs Collector Current FIG.8 Turn On and Turn Off Times vs Collector Current 50 20 10 tr=15V 5 30ns 2 60ns 1 10 100 IC COLLERTOR CURRENT (mA) FIG.9 Rise Time vs Collector and Turn On Base Current WEITRON http://www.weitron.com.tw 1000 Ic-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) 500 MMBT2907AT SOT-523 Outline Dimensions (SC-75) Unit:mm SC-75 A B T OP V IE W C D E G H K J WEITRON http://www.weitron.com.tw L M Dim A B C D E G H J K L M Min 0.30 0.70 1.45 0.15 0.80 1.40 0.00 0.70 0.37 0.10 Max 0.50 0.90 1.75 0.50 0.40 1.00 1.80 0.10 1.00 0.48 0.25