BUZ 110S
Data Book 1 05.99
SIPMOSPower Transistor
Product Summary
Drain source voltage 55
V
DS
V
Drain-Source on-state resistance
0.01
R
DS(on)
I
D
Continuous drain current 80 A
Features
N channel
Enhancement mode
Avalanche rated
d
v
/d
t
rated
175 ˚C operating temperature
Pin 1 Pin 2 Pin 3
G D S
PackagingType Package Ordering Code
BUZ110S TubeP-TO220-3-1 Q67040-S4005-A2
BUZ110S E3045A Tape and ReelQ67040-S4005-A6P-TO263-3-2
TubeBUZ110S E3045 P-TO263-3-2 Q67040-S4005-A5
Maximum Ratings,at
T
j= 25 ˚C unless otherwise specified
Parameter Symbol UnitValue
Continuous drain current
T
C
= 25 ˚C,
limited by bond wire
T
C
= 100˚C
80
66
I
D
A
Pulsed drain current
T
C
= 25 ˚C
I
Dpulse
320
Avalanche energy, single pulse
I
D
=80A,
V
DD
=25V,
R
GS
=25
mJ
E
AS
460
Avalanche energy, periodic limited by
T
jmax
20
E
AR
Reverse diode d
v
/d
t
I
S
=80A,
V
DS
=40V, d
i
/d
t
= 200 A/
µ
s,
T
jmax
= 175 ˚C
d
v
/d
t
6kV/
µ
s
Gate source voltage
V
GS
±20 V
Power dissipation
T
C
= 25 ˚C
P
tot
200 W
Operating and storage temperature
T
j,
T
stg
˚C-55... +175
55/175/56IEC climatic category; DIN IEC 68-1
BUZ 110S
Data Book 2 05.99
Thermal Characteristics
Parameter ValuesSymbol Unit
typ. max.min.
Characteristics
R
thJC
- - 0.75 K/WThermal resistance, junction - case
-Thermal resistance, junction - ambient, leded
R
thJA
-62
-
-
-
-
62
40
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
Electrical Characteristics, at
T
j
= 25 ˚C, unless otherwise specified
Parameter Symbol UnitValues
min. max.typ.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
-
V
(BR)DSS
55 - V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 200 µA
V
GS(th)
432.1
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 150 ˚C
-
-
I
DSS
µA
1
100
0.1
-
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-10 nA100
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 66 A
R
DS(on)
-0.009 0.01
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
BUZ 110S
Data Book 3 05.99
Electrical Characteristics, at
T
j
= 25 ˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
= 66 A
g
fs
30 49 - S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
-2420 3025 pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-745 930
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
rss
-380 475
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 80 A,
R
G
= 3.9
t
d(on)
-20 30 ns
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 80 A,
R
G
= 3.9
t
r
-35 55
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 80 A,
R
G
= 3.9
t
d(off)
-45 70
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 80 A,
R
G
= 3.9
t
f
-30 45
BUZ 110S
Data Book 4 05.99
Electrical Characteristics, at
T
j
= 25 ˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
V
DD
= 40 V,
I
D
= 80 A
26 nC17
Q
gs
-
-41
Q
gd
Gate to drain charge
V
DD
= 40 V,
I
D
= 80 A
61.5
Gate charge total
V
DD
= 40 V,
I
D
= 80 A,
V
GS
= 0 to 10 V
-85 130
Q
g
Gate plateau voltage
V
DD
= 40 V,
I
D
= 80 A
V
(plateau)
5.8 - V-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 ˚C
I
S
- - 80 A
Inverse diode direct current,pulsed
T
C
= 25 ˚C
I
SM
- - 320
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 160 A
V
SD
-1.3 V2
Reverse recovery time
V
R
= 30 V,
I
F
=
I
S
, d
i
F
/d
t
= 100 A/µs
t
rr
-80 ns120
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
, d
i
F
/d
t
= 100 A/µs
Q
rr
-µC0.17 0.25
BUZ 110S
Data Book 5 05.99
Power Dissipation
P
tot
=
f
(
T
C
)
020 40 60 80 100 120 140 160 ˚C190
T
C
0
20
40
60
80
100
120
140
160
180
W
220
BUZ110S
P
tot
Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
10 V
020 40 60 80 100 120 140 160 ˚C190
T
C
0
10
20
30
40
50
60
70
A
90
BUZ110S
I
D
Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
BUZ110S
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25 ˚C
10 -1 10 0 10 1 10 2
V
V
DS
0
10
1
10
2
10
3
10
A
BUZ110S
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
10 µs
t
p = 8.7µs
BUZ 110S
Data Book 6 05.99
Typ. output characteristics
I
D
=
f
(
V
DS
)
parameter:
t
p
= 80 µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
V
DS
0
20
40
60
80
100
120
140
160
A
190
BUZ110S
I
D
V
GS [V]
a
a4.0
b
b4.5
c
c5.0
d
d5.5
e
e6.0
ff6.5
g
g7.0
h
h7.5
i
i8.0
j
j9.0
k
k 10.0
l
P
tot = 200W
l 20.0
Typ. drain-source-on-resistance
R
DS(on)
=
f
(
I
D
)
parameter:
V
GS
020 40 60 80 100 120 140 A170
I
D
0.000
0.004
0.008
0.012
0.016
0.020
0.024
0.032
BUZ110S
R
DS(on)
V
GS [V] =
c
c
5.0
d
d
5.5
e
e
6.0
f
f
6.5
g
g
7.0
h
h
7.5
i
i
8.0
j
j
9.0
k
k
10.0
l
l
20.0
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80 µs
V
DS
2 x
I
D
x
R
DS(on) max
2.5 3.0 3.5 4.0 4.5 5.0 V6.0
V
GS
0
10
20
30
40
50
60
A
80
I
D
Typ. forward transconductance
g
fs
= f
(
I
D
)
;
T
j
= 25˚C
parameter:
g
fs
010 20 30 40 50 A65
I
D
0
5
10
15
20
25
30
35
40
45
S
55
g
fs
BUZ 110S
Data Book 7 05.99
Drain-source on-resistance
R
DS(on)
=
f
(
T
j
)
parameter :
I
D
= 66 A,
V
GS
= 10 V
-60 -20 20 60 100 140 ˚C200
T
j
0.000
0.004
0.008
0.012
0.016
0.020
0.024
0.028
0.034
BUZ110S
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th)
=
f
(
T
j
)
parameter :
V
GS
=
V
DS
,
I
D
= 200 µA
-60 -20 20 60 100 140 ˚C200
T
j
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
V
5.0
V
GS(th)
min
typ
max
Typ. capacitances
C =
f
(V
DS
)
parameter:
V
GS
= 0 V,
f
= 1 MHz
010 20 V40
V
DS
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
Forward characteristics of reverse diode
I
F
=
f
(
V
SD
)
parameter:
T
j
,
t
p
= 80 µs
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
V
SD
0
10
1
10
2
10
3
10
A
BUZ110S
I
F
T
j = 25 ˚C typ
T
j = 25 ˚C (98%)
T
j = 175 ˚C typ
T
j = 175 ˚C (98%)
BUZ 110S
Data Book 8 05.99
Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D puls
= 80 A
020 40 60 80 100 nC 130
Q
Gate
0
2
4
6
8
10
12
V
16
BUZ110S
V
GS
DS max
V
0,8
DS max
V
0,2
Avalanche Energy
E
AS
=
f
(
T
j
)
parameter:
I
D
= 80 A,
V
DD
= 25 V
R
GS
= 25
20 40 60 80 100 120 140 ˚C180
T
j
0
50
100
150
200
250
300
350
400
mJ
500
E
AS
Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
-60 -20 20 60 100 140 ˚C200
T
j
50
52
54
56
58
60
62
64
V
66
BUZ110S
V
(BR)DSS