NVMFS4C05N
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 1.9 °C/W
Junction−to−Ambient – Steady State (Note 5) RqJA 41.6
5. Surface−mounted on FR4 board using 650 mm2, 2 oz Cu pad.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ12 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V TJ = 25°C 1.0 mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.3 2.2 V
Threshold Temperature Coefficient VGS(TH)/TJ−5.1 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 2.3 2.8 mW
VGS = 4.5 V ID = 30 A 3.3 4.0
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 68 S
Gate Resistance RGTA = 25°C 0.3 1.0 2.0 W
CHARGES AND CAPACITANCES
Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 15 V 1972 pF
Output Capacitance COSS 1215
Reverse Transfer Capacitance CRSS 59
Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.030
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
14
nC
Threshold Gate Charge QG(TH) 3.3
Gate−to−Source Charge QGS 6.0
Gate−to−Drain Charge QGD 5.0
Gate Plateau Voltage VGP 3.1 V
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 30 nC
SWITCHING CHARACTERISTICS (Note 7)
T urn−On Delay Time td(ON) VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
11
ns
Rise Time tr32
T urn−Off Delay Time td(OFF) 21
Fall Time tf7.0
T urn−On Delay Time td(ON) VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
8.0
ns
Rise Time tr26
T urn−Off Delay Time td(OFF) 26
Fall Time tf5.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 A TJ = 25°C 0.77 1.1 V
TJ = 125°C 0.62
Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
40.2 ns
Charge Time ta20.3
Discharge Time tb19.9
Reverse Recovery Charge QRR 30.2 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.