NVMFS4C05N Power MOSFET 30 V, 127 A, Single N-Channel, SO-8 FL Features * * * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVMFS4C05NWF - Wettable Flanks Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 2.8 mW @ 10 V 30 V 127 A 4.0 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter D (5-8) Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V 27.2 A Continuous Drain Current RqJA (Notes 1, 2 and 4) TA = 25C Power Dissipation RqJA (Notes 1, 2 and 4) TA = 25C Continuous Drain Current RqJC (Notes 1, 2, 3 and 4) TC = 25C TA = 80C ID S (1,2,3) 3.61 W N-CHANNEL MOSFET PD MARKING DIAGRAM 127 Steady State D ID A TC = 80C Power Dissipation RqJC (Notes 1, 2, 3 and 4) TC = 25C PD 79 W TA = 25C, tp = 10 ms IDM 174 A TJ, TSTG -55 to +175 C IS 72 A EAS 42 mJ Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, IL = 29 Apk, L = 0.1 mH) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) 101 (c) Semiconductor Components Industries, LLC, 2016 1 SO-8 FLAT LEAD CASE 488AA STYLE 1 TL C 260 1 S S S G D 4C05xx AYWZZ D D 4C05N = Specific Device Code for NVMFS4C05N 4C05WF= Specific Device Code of NVMFS4C05NWF A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceabililty ORDERING INFORMATION Package Shipping NVMFS4C05NT1G SO-8 FL (Pb-Free) 1500 / Tape & Reel NVMFS4C05NT3G SO-8 FL (Pb-Free) 5000 / Tape & Reel NVMFS4C05NWFT1G SO-8 FL (Pb-Free) 1500 / Tape & Reel NVMFS4C05NWFT3G SO-8 FL (Pb-Free) 5000 / Tape & Reel Device Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using 650 mm2, 2 oz Cu pad. 3. Assumes heat-sink sufficiently large to maintain constant case temperature independent of device power. 4. Continuous DC current rating. Maximum current for pulses as long as one second is higher but dependent on pulse duration and duty cycle. April, 2016 - Rev. 2 G (4) 21.6 Continuous Drain Current RqJC (Notes 1, 2, 3 and 4) Pulsed Drain Current ID MAX For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NVMFS4C05N/D NVMFS4C05N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction-to-Case (Drain) Parameter RqJC 1.9 Junction-to-Ambient - Steady State (Note 5) RqJA 41.6 Unit C/W 5. Surface-mounted on FR4 board using 650 mm2, 2 oz Cu pad. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V 12 VGS = 0 V, VDS = 24 V mV/C TJ = 25C 1.0 TJ = 125C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Threshold Temperature Coefficient Drain-to-Source On Resistance 1.3 VGS(TH)/TJ RDS(on) 2.2 -5.1 VGS = 10 V ID = 30 A 2.3 2.8 VGS = 4.5 V ID = 30 A 3.3 4.0 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A Gate Resistance RG TA = 25C 68 0.3 1.0 V mV/C mW S 2.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 1972 VGS = 0 V, f = 1 MHz, VDS = 15 V 1215 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 14 Threshold Gate Charge QG(TH) 3.3 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Gate Plateau Voltage VGP Total Gate Charge pF 59 VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A 0.030 nC 6.0 5.0 3.1 V VGS = 10 V, VDS = 15 V; ID = 30 A 30 nC td(ON) 11 tr VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 32 QG(TOT) SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(OFF) tf 7.0 td(ON) 8.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf ns 21 26 ns 26 5.0 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.77 TJ = 125C 0.62 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 40.2 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 20.3 ns 19.9 30.2 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS4C05N 3.8 V 3.6 V 4.5 V 4.2 V 4V 3.4 V 3.2 V 3.0 V 2.8 V 2.6 V 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) TJ = 25C 10 V ID, DRAIN CURRENT (A) 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 1 2 3 5 4 ID = 30 A TJ = 25C 2.0 2.5 3.0 3.5 4.0 9 8 7 6 5 4 3 2 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 4.5 12 TJ = 25C 11 10 9 8 7 6 5 4 VGS = 4.5 V 3 VGS = 10 V 2 1 0 20 40 60 80 100 120 140 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. VGS Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.8 10000 VGS = 0 V ID = 30 A VGS = 10 V TJ = 150C 1.5 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = -55C 1.5 Figure 2. Transfer Characteristics 10 1.6 TJ = 25C Figure 1. On-Region Characteristics 11 1.7 TJ = 125C VGS, GATE-TO-SOURCE VOLTAGE (V) 12 1 3.0 140 130 VDS = 5 V 120 110 100 90 80 70 60 50 40 30 20 10 0 0 0.5 1.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 1.4 1.3 1.2 1.1 1.0 1000 TJ = 125C 100 TJ = 85C 0.9 0.8 10 0.7 -50 -25 0 25 50 75 100 125 150 175 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 30 NVMFS4C05N TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25C 2750 2500 C, CAPACITANCE (pF) VGS, GATE-TO-SOURCE VOLTAGE (V) 3000 2250 Ciss 2000 1750 1500 1250 1000 Coss 750 500 250 0 Crss 0 5 10 15 20 25 30 QT 8 6 4 Qgd Qgs TJ = 25C VDD = 15 V VGS = 10 V ID = 30 A 2 0 0 4 8 12 16 20 24 28 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 32 20 1000 VDD = 15 V ID = 15 A VGS = 10 V IS, SOURCE CURRENT (A) 18 td(off) td(on) 100 tr tf 10 VGS = 0 V 16 14 12 10 8 6 4 TJ = 125C TJ = 25C 2 1 1 10 0 0.4 100 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 10 ms 100 ID, DRAIN CURRENT (A) t, TIME (ns) 10 10 100 ms 1 1 ms 0.1 0.01 0.001 0.0001 10 ms 0 V < VGS < 10 V Single Pulse TC = 25C RDS(on) Limit Thermal Limit Package Limit 0.1 dc 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 1.0 NVMFS4C05N TYPICAL CHARACTERISTICS 100 R(t) (C/W) Duty Cycle = 50% 10 20% 10% 5% 2% 1 1% 0.1 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 12. Thermal Response 1000 120 ID, DRAIN CURRENT (A) 100 GFS (S) 80 60 40 20 10 20 30 40 50 60 70 TA = 25C 10 1 1.E-06 0 0 100 80 TA = 85C 1.E-05 1.E-04 ID (A) PULSE WIDTH (SECONDS) Figure 13. GFS vs. ID Figure 14. Avalanche Characteristics www.onsemi.com 5 1.E-03 NVMFS4C05N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE M 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A 0.10 C SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* DETAIL A 2X 0.10 b C A B 0.05 c 0.495 8X 4.560 MILLIMETERS MIN NOM MAX 1.10 0.90 1.00 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.30 5.15 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 2X 1.530 e/2 e L 1 4 3.200 K 4.530 E2 PIN 5 (EXPOSED PAD) L1 M 1.330 2X 0.905 1 G 0.965 D2 4X 1.000 4X 0.750 BOTTOM VIEW 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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