8-9
TO-92
BVDSX /R
DS(ON) IDSS
BVDGX (max) (min) TO-92 Die
240V 4.0Ω600mA DN2624N3 DN2624ND
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FET s are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Ordering Information
N-Channel Depletion-Mode
Vertical DMOS FETs
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSX
Drain-to-Gate Voltage BVDGX
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Order Number / Package
Package Options
Note: See Package Outline section for dimensions.
DN2624
S G D
8-10
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-92 300mA 1.0A 1.0W 125 170 300mA 1.0A
* ID (continuous) is limited by max rated Tj.
DN2624
Thermal Characteristics
Symbol Parameter Min Typ Max Unit Conditions
BVDSX Drain-to-Source 240 V VGS = -5V, ID = 100µA
Breakdown Voltage
VGS(OFF) Gate-to-Source OFF Voltage –1 –3 V VDS = 25V, ID= 10µA
∆VGS(OFF) Change in VGS(OFF) with Temperature 4.5 mV VDS = 25V, ID= 10µA
IGSS Gate Body Leakage Current 100 nA VGS = ± 20V, VDS = 0V
ID(OFF) Drain-to-Source Leakage Current 10 µAV
GS = -10V, VDS = Max Rating
1mAV
GS = -10V, VDS = 0.8 Max Rating
TA = 125°C
IDSS Saturated Drain-to-Source Current 600 mA VGS = 0V, VDS = 25V
RDS(ON) Static Drain-to-Source 4.0 ΩVGS = 0V, ID = 200mA
ON-State Resistance
∆RDS(ON) Change in RDS(ON) with Temperature 1.1 %/°CV
GS = 0V, ID = 200mA
GFS Forward Transconductance 400 mhos ID = 300mA, VDS = 10V
CISS Input Capacitance 720 VGS = -10V, VDS = 25V
COSS Common Source Output Capacitance 100 pF f = 1 MHz
CRSS Reverse Transfer Capacitance 30
td(ON) Turn-ON Delay Time 15 30 VDD = 25V,
trRise Time 22 44 ns ID = 200mA,
td(OFF) Turn-OFF Delay Time 22 44 RGEN = 10Ω
tfFall Time 30 60
VSD Diode Forward Voltage Drop 1.8 V VGS = -10V, ISD = 200mA
trr Reverse Recovery Time 600 ns VGS = -10V, ISD = 1A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
Switching Waveforms and Test Circuit
8-11
Typical Performance Curves DN2624
BV
DSS
Variation with Temperature
BV
DSS
(normalized)
1.1
1.0
0.9-50 0 0.2 0.4 0.6 0.8 1.00 50 100 150
Transfer Characteristics
T
J
(°C)
V
GS
(Volts)
V
DS
(Volts)
I
D
(amperes)
1.0
0.8
0.6
0.4
0.2
0-3 -2 -1 012
Capacitance Vs. Drain-to-Source Voltage
C (picofarads)
800
600
400
200
0010
20 30 40
V
GS
= -3.5V V
GS
= 0V
V
DS
= 10V
V
GS
= -10V
C
OSS
C
RSS
C
ISS
T
A
= -55°C
T
A
= 25°C
RDS (ON) @
VGS = 0V, ID = 200mA
VGS(OFF) @
VDS = 25V, ID = 10µA
T
A
= 125°C
On-Resistance vs. Drain Current
10
8
6
4
2
0
I
D
(amps)
Q
C
(Nanocoulombs)
R
DS(on)
(ohms)
-50 0 50 100 150
012345
V
(th)
and R
DS
Variation with Temperature
1.6
1.4
1.2
1.0
0.8
2.0
1.6
1.2
0.8
0.4
0
4
2
0
-2
-4
-6
T
j
(°C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
Gate Drive Dynamic Characteristics
V
GS
(volts)
VDS = 25V
ID = 30mA
620pf
700pF
8-12
DN2624
Typical Performance Curves
Output Characteristics
2.0
1.6
1.2
0.8
0.4
0010
20 30 40 50
V
DS
(volts)
V
DS
(volts)
V
DS
(volts)
I
D
(amperes)I
D
(amperes)
I
D
(amperes)
Transconductance vs. Drain Current
I
D
(amperes)
Power Dissipation vs. Temperature
0 15010050 1257525
T
A
(°C)
P
D
(watts)
V
GS
= 1.0V
0.5V
0V
-0.5V
-1.0V
Saturation Characteristics
2.0
1.6
1.2
0.8
0.4
0
1.0
0.8
0.6
0.4
0.2
0
0246 108
Maximum Rated Safe Operating Area
1 100010010
1.0
0.1
0.01
0.001
TO-92 (pulsed)
T
A
= 25°C
TO-92 (DC)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
t
p
(seconds)
0
2.0
1.6
1.2
0.8
0.4
00 1.00.2 0.4 0.6 0.8
G
FS
(siemens)
V
DS
= 10V
T
A
= -55°C
T
A
= 25°C
T
A
= 125°C
TO-92
P
D
= 1.0W
T
A
= 25°C
-1.0V
-0.5V
0V
0.5V
V
GS
= 1.0V
TO-92
