SP3222EUCY-L/TR - MaxLinear, Inc.

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

SP3220E/EB/EU

+3.0V to +5.5V RS-232 Driver/Receiver Pair

The SP3220E devices are RS-232 driver/receiver solutions intended for portable or hand-

held applications such as palmtop computers, intrumentation and consumer products. These

devices incorporate a high-efciency, charge-pump power supply that allows the SP3220E

devices to deliver true RS-232 performance from a single power supply ranging from +3.0V

to +5.0V. This charge pump requires only 0.1µF capacitors in 3.3V operation. The ESD toler-

ance of the these devices are over +/-15kV for both Human Body Model and IEC61000-4-2

Air discharge test methods. All devices have a low-power shutdown mode where the driver

outputs and charge pumps are disabled. During shutdown, the supply current falls to less

than 1µA.

FEATURES

■ Meets all EIA/TIA-232-F Standards

from a +3.0V to +5.5V power supply

• Interoperable with RS-232 and V.28 at +2.7V

■ Supports High Serial Data Rates:

• 120kbps SP3220E

• 250kbps SP3220EB

• 1Mbps SP3220EU

■ 1µA Low Power Shutdown Mode

■ Footprint Compatible with MAX3221E, ISL3221

■ 4 x 1.0µF External Charge Pump Capacitors

■ Improved ESD Specications:

+15kV Human Body Model

+15kV IEC61000-4-2 Air Discharge

+8kV IEC61000-4-2 Contact Discharge

DESCRIPTION

SELECTION TABLE

Now Available in Lead Free Packaging

V-

413

C1+

V+

C1-

C2+

C2-

R1IN

GND

T1OUT

No Connect

SP3220

E/EB/EU

T1IN

No Connect

R1OUT

EN SHDN

MODEL Power

Supplies

RS-232

Drivers

RS-232

Receivers

External

Components

Shutdown Data Rate

SP3220E +3.0V to +5.5V 1 1 4 Capacitors Yes 120kbps

SP3220EB +3.0V to +5.5V 1 1 4 Capacitors Yes 250kbps

SP3220EU +3.0V to +5.5V 1 1 4 Capacitors Yes 1Mbps

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

NOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V.

These are stress ratings only and functional operation

of the device at these ratings or any other above those

indicated in the operation sections of the specications

below is not implied. Exposure to absolute maximum

rating conditions for extended periods of time may

affect reliability and cause permanent damage to the

device.

VCC.......................................................-0.3V to +6.0V

V+ (NOTE 1).......................................-0.3V to +7.0V

V- (NOTE 1)........................................+0.3V to -7.0V

V+ + |V-| (NOTE 1)...........................................+13V

ICC (DC VCC or GND current).........................+100mA

Input Voltages

TxIN, EN, SHDN...........................-0.3V to Vcc + 0.3V

RxIN...................................................................+25V

Output Voltages

TxOUT.............................................................+13.2V

RxOUT, .......................................-0.3V to (VCC +0.3V)

Short-Circuit Duration

TxOUT....................................................Continuous

Storage Temperature......................-65°C to +150°C

Unless otherwise noted, the following specications apply for VCC = +3.0V to +5.5V with TAMB = TMIN to TMAX.

Typical values apply at Vcc = +3.3V or +5.0V and TAMB = 25oC, C1 - C4 = 0.1µF.

Power Dissipation per package

16-pin SSOP (derate 9.69mW/oC above +70oC)...............775mW

16-pin Wide SOIC (derate 11.2mW/oC above +70oC)........900mW

16-pin TSSOP (derate 10.5mW/oC above +70oC)..............840mW

ELECTRICAL CHARACTERISTICS

PARAMETER MIN. TYP. MAX. UNITS CONDITIONS

DC CHARACTERISTICS

Supply Current 0.3 1.0 mA no load, VCC = 3.3V,

TAMB = 25oC, TxIN = GND or VCC

Shutdown Supply Current 1.0 10 µA SHDN = GND, VCC = 3.3V,

TAMB = 25oC, TxIN = Vcc or GND

LOGIC INPUTS AND RECEIVER OUTPUTS

Input Logic Threshold LOW GND 0.8 V TxIN, EN, SHDN, Note 2

Input Logic Threshold HIGH 2.0 V Vcc = 3.3V, Note 2

Input Logic Threshold HIGH 2.4 V Vcc = 5.0V, Note 2

Input Leakage Current +0.01 +1.0 µA TxIN, EN, SHDN,

TAMB = +25oC, VIN = 0V to VCC

Output Leakage Current +0.05 +10 µA Receivers disabled, VOUT = 0V to VCC

Output Voltage LOW 0.4 V IOUT = 1.6mA

Output Voltage HIGH VCC -0.6 VCC -0.1 V IOUT = -1.0mA

DRIVER OUTPUTS

Output Voltage Swing +5.0 +5.4 V Driver output loaded with 3KΩ to

GND, TAMB = +25oC

ABSOLUTE MAXIMUM RATINGS

NOTE 2: Driver input hysteresis is typically 250mV.

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

Unless otherwise noted, the following specications apply for VCC = +3.0V to +5.5V with TAMB = TMIN to TMAX,

Typical values apply at VCC = +3.3V or +5.0V and TAMB = 25°C.

ELECTRICAL CHARACTERISTICS

PARAMETER MIN. TYP. MAX. UNITS CONDITIONS

DRIVER OUTPUTS (continued)

Output Resistance 300 Ω VCC = V+ = V- = 0V, TOUT=+2V

Output Short-Circuit Current +35 +60 mA VOUT = 0V

Output Leakage Current +25 µA VOUT = +12V, VCC = GND to 5.5V,

Drivers disabled

RECEIVER INPUTS

Input Voltage Range -25 +25 V

Input Threshold LOW 0.6 1.2 V Vcc = 3.3V

Input Threshold LOW 0.8 1.5 V Vcc = 5.0V

Input Threshold HIGH 1.5 2.4 V Vcc = 3.3V

Input Threshold HIGH 1.8 2.4 V Vcc = 5.0V

Input Hysteresis 0.3 V

Input Resistance 3 5 7 kΩ

TIMING CHARACTERISTICS

Data Rate SP3220E 120 235 kbps RL = 3KΩ, CL = 1000pF

Data Rate SP3220EB 250 kbps RL = 3KΩ, CL = 1000pF

Data Rate SP3220EU 1000 kbps RL = 3KΩ, CL = 250pF

Receiver Propagation Delay, tPHL

0.15 µs Receiver input to Receiver

output, CL = 150pF

Receiver Propagation Delay, tPLH 0.15 µs Receiver input to Receiver

output, CL = 150pF

Receiver Output Enable Time 200 ns

Receiver Output Disable Time 200 ns

Driver Skew 100 ns | tPHL - tPLH |, TAMB = 25°C

Receiver Skew 50 ns | tPHL - tPLH |

Transition-Region Slew Rate 30 V/µs Vcc = 3.3V, RL = 3kΩ, TAMB =

25°C, measurements taken from

-3.0V to +3.0V or +3.0V to -3.0V

(SP3220E and SP3220EB)

Transition-Region Slew Rate 90 V/µs Vcc = 3.3V, RL = 3kΩ, TAMB =

25°C, measurements taken from

-3.0V to +3.0V or +3.0V to -3.0V

(SP3220EU)

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

Unless otherwise noted, the following performance characteristics apply for VCC = +3.3V, 250kbps data rate, all

drivers loaded with 3kΩ, 0.1µF charge pump capacitors, and TAMB = +25°C.

Figure 2. Transmitter Output Voltage vs Load

Capacitance for the SP3220EB.

Figure 1. Icc vs Load Capacitance for the

SP3220EB.

Icc (mA)

Load Capacitance (pF)

0 1000 2000 3000 4000 5000

125Kbps

20Kbps

60Kbps

T1 at Full Data Rate

T2 at 1/16 Full Data Rate

T1+T2 Loaded with 3k/CLoad

Figure 3. Transmitter Output Voltage vs Supply

Voltage for the SP3220EB.

TYPICAL PERFORMANCE CHARACTERISTICS

-2

-4

-6 0 1000 2000 3000 4000 5000

TxOUT +

TxOUT -

Transmitter Output

Voltage (V)

Load Capacitance (pF)

T1 at 250Kbps

2.7 3 3.5 4 4.5 5

Supply V oltage (V)

Transmitter Output

Voltage (V)

-2

-4

-6

TxOUT +

TxOUT -

Figure 4. Supply Current vs Supply Voltage for the

SP3220EB.

02.7 3 3.5 4 4.5 5

Supply Current (mA)

Supply Voltage (V)

T1 Loaded with 3K // 1000pf @ 250Kbps

Figure 5. Slew Rate vs Load Capacitance for the

SP3220EB.

Figure 6. Supply Current vs Supply Voltage for the

SP3220EU.

00 500 1000 2000 3000 4000 5000

Slew rate (V/s)

Load Capacitance (pF)

- Slew

+ Slew

0 250 500 1000 2000 3000 4000

Icc (mA)

Load Capacitance (pF)

500Kbps

1Mbps

2Mbps

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

Unless otherwise noted, the following performance characteristics apply for VCC = +3.3V, 250kbps data rate, all

drivers loaded with 3kΩ, 0.1µF charge pump capacitors, and TAMB = +25°C.

TYPICAL PERFORMANCE CHARACTERISTICS: Continued

0 250 500 1000 1500 2000

Load Capacitance (pF)

Transmitter

Output V oltage (V)

-2

-4

-6

2Mbps 1.5Mbps 1Mbps

2.5 2.7 3 3.5 4 4.5 5

Supply V oltage (V)

Transmitter Output

Voltage (V)

-2

-4

-6

TxOUT +

TxOUT -

02.7 3 3.5 4 4.5 5

Supply Current (mA)

Supply Voltage (V)

T1 Loaded with 3K // 1000pf @1Mbps

Figure 7. Transmitter Output Voltage vs Load

Capacitance for the SP3220EU.

Figure 8. Transmitter Output Voltage vs Supply

Voltage for the SP3220EU.

Figure 9. Supply Current vs Supply Voltage for the

SP3220EU.

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

Table 1. Device Pin Description

NAME FUNCTION PIN NUMBER

EN Receiver Enable. Apply Logic LOW for normal operation.

Apply logic HIGH to disable the receiver outputs (high-Z state) 1

C1+ Positive terminal of the voltage doubler charge-pump capacitor 2

V+ +5.5V output generated by the charge pump 3

C1- Negative terminal of the voltage doubler charge-pump capacitor 4

C2+ Positive terminal of the inverting charge-pump capacitor 5

C2- Negative terminal of the inverting charge-pump capacitor 6

V- -5.5V output generated by the charge pump 7

R1IN RS-232 receiver input 8

R1OUT TTL/CMOS receiver output 9

T1IN TTL/CMOS driver input 11

T1OUT RS-232 driver output. 13

GND Ground 14

VCC +3.0V to +5.5V supply voltage 15

SHDN

Shutdown Control Input. Drive HIGH for normal device operation.

Drive LOW to shutdown the drivers (high-Z output) and the on-

board power supply

N.C. No Connect 10, 12

PIN FUNCTION

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Figure 10. Pinout Congurations for the SP3220E/EB/EU

V-

413

C1+

V+

C1-

C2+

C2-

R1IN

GND

VCC

T1OUT

No Connect

SP3220

E/EB/EU

T1IN

No Connect

R1OUT

EN SHDN

PINOUT

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

Figure 11. SP3220E/EB/EU Typical Operating Circuit

SP3220

GND

T1IN T1OUT

C1+

C1-

C2+

C2-

V+

V-

0.1µF

0.1

+*C3

0.1

13 RS-232

OUTPUTS

RS-232

INPUTS

LOGIC

INPUTS

5kΩ

R1IN

R1OUT

LOGIC

OUTPUTS

*can be returned to

either V

or GND

1SHDN 16

µF

E/EB/EU

TYPICAL OPERATING CIRCUITS

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

The SP3220E/EB/EU devices meet the

EIA/TIA-232 and ITU-T V.28/V.24 commu-

nication protocols and can be implemented

in battery-powered, portable, or hand-held

applications such as notebook or palmtop

computers. The SP3220E/EB/EU devices

feature Exar's proprietary on-board charge

pump circuitry that generates ±5.5V for RS-

232 voltage levels from a single +3.0V to

+5.5V power supply. This series is ideal for

+3.3V-only systems, mixed +3.3V to +5.5V

systems, or +5.0V-only systems that require

true RS-232 performance. The SP3220EB

device has a driver that can operate at a data

rate of 250kbps fully loaded. The SP3220EU

can operate at 1000kbps; the SP3220E

device can operate at a typical data rate of

235kbps when fully loaded.

The SP3220E/EB/EU is a 1-driver/1- receiver

device ideal for portable or hand-held ap-

plications. The SP3220E/EB/EU features a

1µA shutdown mode that reduces power

consumption and extends battery life in por-

table systems. Its receivers remain active in

shutdown mode, allowing external devices

such as modems to be monitored using only

1µA supply current.

THEORY OF OPERATION

The SP3220E/EB/EU series is made up of

three basic circuit blocks:

1. Driver

2. Receiver

3. The Exar proprietary charge pump

Driver

The driver is an inverting level transmitter that

converts TTL or CMOS logic levels to +5.0V

EIA/TIA-232 levels with an inverted sense

relative to the input logic levels. Typically,

the RS-232 output voltage swing is +5.5V

with no load and at least +5V minimum fully

loaded. The driver outputs are protected

against innite short-circuits to ground with-

out degradation in reliability. Driver outputs

will meet EIA/TIA-562 levels of +/-3.7V with

supply voltages as low as 2.7V.

The SP3220EB driver can guarantee a data

rate of 250kbps fully loaded with 3kΩ in

parallel with 1000pF, ensuring compatability

with PC-to-PC communication software. The

SP3220EU driver can guarantee a data rate

of 1000kbps fully loaded with 3kΩ in parallel

with 250pF.

The slew rate of the SP3220E and

SP3220EB outputs are internally limited to a

maximum of 30V/µs in order to meet the EIA

standards (EIA RS-232D 2.1.7, Paragraph

5). The transition of the loaded output from

HIGH to LOW also meet the monotonicity

requirements of the standard. The slew rate

of the SP3220EU is not limited. This allows

it to transmit at much faster data rates.

Figure 12 shows a loopback test circuit

used to test the RS-232 Driver. Figure

13 shows the test results of the loopback

circuit with the SP3220EB driver active at

250kbps with RS-232 load in parallel with

a 1000pF capacitor. Figure 14 shows the

test results where the SP3220EU driver

was active at 1000kbps and loaded with an

RS-232 receiver in parallel with 250pF ca-

pacitors. A solid RS-232 data transmission

rate of 250kbps provides compatibility with

many designs in personal computer periph-

erals and LAN applications.

The SP3220E/EB/EU driver's output stage

is turned off (tri-state) when the device

is in shutdown mode. When the power is

off, the SP3220E/EB/EU device permits

the outputs to be driven up to +/-12V. The

driver's inputs do not have pull-up resistors.

Designers should connect unused inputs to

Vcc or GND.

In the shutdown mode, the supply current

falls to less than 1µA, where SHDN = LOW.

When the SP3220E/EB/EU device is shut

down, the device's driver output is disabled

DESCRIPTION

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

(tri-stated) and the charge pump is turned

off with V+ pulled down to Vcc and V- pulled

to GND. The time required to exit shutdown

is typically 100ms. Connect SHDN to Vcc if

the shutdown mode is not used. SHDN has

no effect on RxOUT. Note that the driver is

enabled only when the magnitude of V- ex-

ceeds approximately 3V.

Receiver

The receiver converts EIA/TIA-232 levels

to TTL or CMOS logic output levels. The

receiver has an inverting high-impedance

output. This receiver output (RxOUT) is at

high-impedance when the enable control

EN = HIGH. In the shutdown mode, the

receiver can be active or inactive. EN has

no effect on TxOUT. The truth table logic

of the SP3220E/EB/EU driver and receiver

outputs can be found in Table 2.

Table 2. SP3220E/EB/EU Truth Table Logic for

Shutdown and Enable Control

Figure 12. SP3220E/EB/EU Driver Loopback Test

Circuit

Since receiver input is usually from a trans-

mission line where long cable lengths and

system interference can degrade the signal,

the inputs have a typical hysteresis margin

of 300mV. This ensures that the receiver

is virtually immune to noisy transmission

lines. Should an input be left unconnected,

an internal 5KΩ pulldown resistor to ground

will commit the output of the receiver to a

HIGH state.

Figure 14. SP3220EU Loopback Test results at

1Mbps

Figure 13. SP3220EB Loopback Test results at

250kbps

SP3220

E/EB/EU

GND

TxIN TxOUT

C1+

C1-

C2+

C2-

V+

V-

0.1µF

0.1

LOGIC

INPUTS

5kΩ

RxIN

RxOUT

LOGIC

OUTPUTS

EN *SHDN

(SP3220EU 250pF)

(SP3220E/EB 1000pF)

µF

SHDN EN TxOUT RxOUT

0 0 Tri-state Active

0 1 Tri-state Tri-state

1 0 Active Active

1 1 Active Tri-state

DESCRIPTION

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

Charge Pump

The charge pump is an Exar-patended

design (U.S. 5,306,954) and uses a unique

approach compared to older less-efcient

designs. The charge pump still requires four

external capacitors, but uses a four-phase

voltage shifting technique to attain sym-

metrical 5.5V power supplies. The internal

power supply consists of a regulated dual

charge pump that provides output voltages

of +/-5.5V regardless of the input voltage

(Vcc) over the +3.0V to +5.5V range.

In most circumstances, decoupling the

power supply can be achieved adequately

using a 0.1µF bypass capacitor at C5 (refer

to gures 6 and 7). In applications that are

sensitive to power-supply noise, decouple

Vcc to ground with a capacitor of the same

value as charge-pump capacitor C1. Physi-

cally connect bypass capcitors as close to

the IC as possible.

The charge pump operates in a discontinu-

ous mode using an internal oscillator. If the

output voltages are less than a magnitude

of 5.5V, the charge pump is enabled. If the

output voltages exceed a magnitude of 5.5V,

the charge pump is disabled. This oscillator

controls the four phases of the voltage shift-

ing. A description of each phase follows.

Phase 1

— VSS charge storage — During this phase

of the clock cycle, the positive side of capaci-

tors C1 and C2 are initially charged to VCC.

+ is then switched to GND and the charge

in C1

– is transferred to C2

–. Since C2

+ is con-

nected to VCC, the voltage potential across

capacitor C2 is now 2 times VCC.

Phase 2

— VSS transfer — Phase two of the clock

connects the negative terminal of C2 to the VSS

storage capacitor and the positive terminal of

C2 to GND. This transfers a negative gener-

ated voltage to C3. This generated voltage is

regulated to a minimum voltage of -5.5V.

Simultaneous with the transfer of the volt-

age to C3, the positive side of capacitor C1

is switched to VCC and the negative side is

connected to GND.

Phase 3

— VDD charge storage — The third phase of

the clock is identical to the rst phase — the

charge transferred in C1 produces –VCC in

the negative terminal of C1, which is applied

to the negative side of capacitor C2. Since

+ is at VCC, the voltage potential across C2

is 2 times VCC.

Phase 4

— VDD transfer — The fourth phase of

the clock connects the negative terminal

of C2 to GND, and transfers this positive

generated voltage across C2 to C4, the

VDD storage capacitor. This voltage is

regulated to +5.5V. At this voltage, the in-

ternal oscillator is disabled. Simultaneous

with the transfer of the voltage to C4, the

positive side of capacitor C1 is switched

to VCC and the negative side is con-

nected to GND, allowing the charge

pump cycle to begin again. The charge

pump cycle will continue as long as the

operational conditions for the internal

oscillator are present.

Since both V+ and V– are separately gener-

ated from VCC, in a no–load condition V+

and V– will be symmetrical. Older charge

pump approaches that generate V– from

V+ will show a decrease in the magnitude

of V– compared to V+ due to the inherent

inefciencies in the design.

DESCRIPTION

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DESCRIPTION

Charge Pump Design Guidelines

The charge pump operates with 0.1µF ca-

pacitors for 3.3V operation. For other supply

voltages, see the table for required capacitor

values. Do not use values smaller than those

listed. Increasing the capacitor values (e.g.,

by doubling in value) reduces ripple on the

transmitter outputs and may slightly reduce

power consumption. C2, C3, and C4 may be

increased without changing C1’s value.

Minimum recommended charge pump

capacitor value

Input Voltage

Vcc

Charge pump

capacitor value for

SP3220E/EB/EU

3.0V to 3.6V C1 - C4 = 0.1µF

3.0V to 5.5V C1 - C4 = 0.22µF

The charge pump oscillator typically operates

at greater than 250kHz allowing the pump to

run efciently with small 0.1μF capacitors.

Efcient operation depends on rapidly charg-

ing and discharging C1 and C2, therefore

capacitors should be mounted close to the

IC and have low ESR (equivalent series

resistance).

Low cost surface mount ceramic capacitors

(such as are widely used for power-supply

decoupling) are ideal for use on the charge

pump. However the charge pumps are de-

signed to be able to function properly with a

wide range of capacitor styles and values.

If polarized capacitors are used the positive

and negative terminals should be connected

as shown in the Typical Operating Circuit.

Voltage potential across any of the capaci-

tors will never exceed 2 x VCC. Therefore

capacitors with working voltages as low as

6.3V rating may be used with a 3.0V VCC

supply. The reference terminal of the V+

capacitor may be connected either to VCC

or ground, but if connected to ground a

minimum 10V working voltage is required.

Higher working voltages and/or capacitance

values may be advised if operating at higher

VCC or to provide greater stability as the

capacitors age.

Under lightly loaded conditions the intelligent

pump oscillator maximizes efciency by

running only as needed to maintain V+ and

V-. Since interface transceivers often spend

much of their time at idle this power-efcient

innovation can greatly reduce total power

consumption. This improvement is made

possible by the independent phase sequence

of the Exar charge-pump design.

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

Figure 16. Charge Pump — Phase 2

= +5V

Storage Capacitor

Storage Capacito

+ +

–

––

-5.5V

VCC = +5V

–5V –5V

+5V

VSS Storage Capacitor

VDD Storage Capacitor

C1C2

+ +

–

––

Figure 15. Charge Pump — Phase 1

Figure 18. Charge Pump — Phase 3

= +5V

–5V –5V

+5V

Storage Capacitor

+ +

–

––

Figure 19. Charge Pump — Phase 4

= +5V

Storage Capacitor

Storage Capacito

+ +

–

––

+5.5V

Figure 17. Charge Pump Waveforms

Ch1 2.00V Ch2 2.00V M 1.00µs Ch1 5.48V

T[ ]

+6V

a) C

b) C

GND

-6V

DESCRIPTION

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ESD TOLERANCE

The SP3220E/EB/EU device incorpo-

rates ruggedized ESD cells on all driver

output and receiver input pins. The ESD

structure is improved over our previous

family for more rugged applications and

environments sensitive to electro-static

discharges and associated transients. The

improved ESD tolerance is at least +15kV

without damage nor latch-up.

There are different methods of ESD testing

applied:

a) MIL-STD-883, Method 3015.7

b) IEC61000-4-2 Air-Discharge

c) IEC61000-4-2 Direct Contact

The Human Body Model has been the

generally accepted ESD testing method

for semi-conductors. This method is also

specied in MIL-STD-883, Method 3015.7

for ESD testing. The premise of this ESD test

is to simulate the human body’s potential to

store electro-static energy and discharge it

to an integrated circuit. The simulation is

performed by using a test model as shown

in Figure 20. This method will test the IC’s

capability to withstand an ESD transient

during normal handling such as in manu-

facturing areas where the ICs tend to be

handled frequently.

The IEC-61000-4-2, formerly IEC801-2, is

generally used for testing ESD on equipment

and systems. For system manufacturers,

they must guarantee a certain amount of ESD

protection since the system itself is exposed

to the outside environment and human pres-

ence. The premise with IEC61000-4-2 is that

the system is required to withstand an amount

of static electricity when ESD is applied to

points and surfaces of the equipment that

are accessible to personnel during normal

usage. The transceiver IC receives most

of the ESD current when the ESD source is

applied to the connector pins. The test circuit

for IEC61000-4-2 is shown on Figure 21.

There are two methods within IEC61000-4-2,

the Air Discharge method and the Contact

Discharge method.

With the Air Discharge Method, an ESD

voltage is applied to the equipment under

test (EUT) through air. This simulates an

electrically charged person ready to connect

a cable onto the rear of the system only to

nd an unpleasant zap just before the person

touches the back panel. The high energy

potential on the person discharges through

an arcing path to the rear panel of the system

before he or she even touches the system.

This energy, whether discharged directly or

through air, is predominantly a function of the

discharge current rather than the discharge

voltage. Variables with an air discharge such

as approach speed of the object carrying the

ESD potential to the system and humidity

will tend to change the discharge current.

For example, the rise time of the discharge

current varies with the approach speed.

The Contact Discharge Method applies the

ESD current directly to the EUT. This method

was devised to reduce the unpredictability

of the ESD arc. The discharge current rise

time is constant since the energy is directly

transferred without the air-gap arc. In situ-

ations such as hand held systems, the ESD

charge can be directly discharged to the

Figure 20. ESD Test Circuit for Human Body Model

Device

Under

Test

DC Power

Source

SW1 SW2

DESCRIPTION

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

DEVICE PIN HUMAN BODY IEC61000-4-2

TESTED MODEL Air Discharge Direct Contact Level

Driver Outputs +15kV +15kV +8kV 4

Receiver Inputs +15kV +15kV +8kV 4

equipment from a person already holding

the equipment. The current is transferred

on to the keypad or the serial port of the

equipment directly and then travels through

the PCB and nally to the IC.

The circuit models in Figures 20 and 21 rep-

resent the typical ESD testing circuit used for

all three methods. The CS is initially charged

with the DC power supply when the rst

switch (SW1) is on. Now that the capacitor

is charged, the second switch (SW2) is on

while SW1 switches off. The voltage stored

in the capacitor is then applied through RS,

the current limiting resistor, onto the device

under test (DUT). In ESD tests, the SW2

switch is pulsed so that the device under

test receives a duration of voltage.

For the Human Body Model, the current

limiting resistor (RS) and the source capacitor

(CS) are 1.5kΩ an 100pF, respectively. For

IEC-61000-4-2, the current limiting resistor

(RS) and the source capacitor (CS) are 330Ω

an 150pF, respectively.

Figure 22. ESD Test Waveform for IEC61000-4-2

Figure 21. ESD Test Circuit for IEC61000-4-2

Table 3. Transceiver ESD Tolerance Levels

and

add up to 330Ω for IEC61000-4-2.

Device

Under

Test

DC Power

Source

SW1 SW2

Contact-Discharge Model

t = 0ns t = 30ns

15A

30A

I →

t →

The higher CS value and lower RS value in

the IEC61000-4-2 model are more stringent

than the Human Body Model. The larger

storage capacitor injects a higher voltage

to the test point when SW2 is switched on.

The lower current limiting resistor increases

the current charge onto the test point.

DESCRIPTION

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

PACKAGE: 16 PIN SSOP

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

PACKAGE: 16 PIN WSOIC

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

PACKAGE: 16 PIN TSSOP

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

ORDERING INFORMATION

Part Number Temp. Range Package

SP3220ECA-L 0°C to +70°C 16 Pin SSOP

SP3220ECA-L/TR 0°C to +70°C 16 Pin SSOP

SP3220ECT-L 0°C to +70°C 16 Pin WSOIC

SP3220ECT-L/TR 0°C to +70°C 16 Pin WSOIC

SP3220ECY-L 0°C to +70°C 16 Pin TSSOP

SP3220ECY-L/TR 0°C to +70°C 16 Pin TSSOP

SP3220EEA-L -40°C to +85°C 16 Pin SSOP

SP3220EEA-L/TR -40°C to +85°C 16 Pin SSOP

SP3220EET-L -40°C to +85°C 16 Pin WSOIC

SP3220EET-L/TR -40°C to +85°C 16 Pin WSOIC

SP3220EEY-L -40°C to +85°C 16 Pin TSSOP

SP3220EEY-L/TR -40°C to +85°C 16 Pin TSSOP

Part Number Temp. Range Package

SP3220EBCA-L 0°C to +70°C 16 Pin SSOP

SP3220EBCA-L/TR 0°C to +70°C 16 Pin SSOP

SP3220EBCT-L 0°C to +70°C 16 Pin WSOIC

SP3220EBCT-L/TR 0°C to +70°C 16 Pin WSOIC

SP3222EBCY-L 0°C to +70°C 16 Pin TSSOP

SP3222EBCY-L/TR 0°C to +70°C 16 Pin TSSOP

SP3220EBEA-L -40°C to +85°C 16 Pin SSOP

SP3220EBEA-L/TR -40°C to +85°C 16 Pin SSOP

SP3220EBET-L -40°C to +85°C 16 Pin WSOIC

SP3220EBET-L/TR -40°C to +85°C 16 Pin WSOIC

SP3220EBEY-L -40°C to +85°C 16 Pin TSSOP

SP3220EBEY-L/TR -40°C to +85°C 16 Pin TSSOP

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

Part Number Temp. Range Package

SP3220EUCT-L 0°C to +70°C 16 Pin WSOIC

SP3220EUCT-L/TR 0°C to +70°C 16 Pin WSOIC

SP3222EUCY-L 0°C to +70°C 16 Pin TSSOP

SP3222EUCY-L/TR 0°C to +70°C 16 Pin TSSOP

SP3220EUET-L -40°C to +85°C 16 Pin WSOIC

SP3220EUET-L/TR -40°C to +85°C 16 Pin WSOIC

SP3220EUEY-L -40°C to +85°C 16 Pin TSSOP

SP3220EUEY-L/TR -40°C to +85°C 16 Pin TSSOP

ORDERING INFORMATION

Note: "/TR" is for tape and Reel option. "-L" is for lead free packaging

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3220E_EB_EU_101_060311

REVISION HISTORY

Notice

EXAR Corporation reserves the right to make changes to any products contained in this publication in order to improve design, performance or reli-

ability. EXAR Corporation assumes no representation that the circuits are free of patent infringement. Charts and schedules contained herein are

only for illustration purposes and may vary depending upon a user's specic application. While the information in this publication has been carefully

checked; no responsibility, however, is assumed for inaccuracies.

EXAR Corporation does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to signicantly affect its safety or effectiveness. Products are not authorized for

use in such applications unless EXAR Corporation receives, in writting, assurances to its satisfaction that: (a) the risk of injury or damage has been

minimized ; (b) the user assumes all such risks; (c) potential liability of EXAR Corporation is adequately protected under the circumstances.

Datasheet June 2011

For technical questions please email Exar's Serial Technical Support group at: serialtechsupport@exar.com

Reproduction, in part or whole, without the prior written consent of EXAR Corporation is prohibited.

DATE REVISION DESCRIPTION

08/30/05 -- Legacy Sipex Datasheet

02/02/11 1.0.0 Convert to Exar Format and update ordering information.

06/03/11 1.0.1 Remove SP3220EUCA-L(/TR) and SP3220EUEA-L(/TR) per

PDN 110510-01