Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.4
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -3.5 A
IDM Pulsed Drain Current -20
PD @TA = 25°C Power Dissipation 2.0
PD @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
EAS Single Pulse Avalanche Energy31 mJ
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
08/31/05
Parameter Max. Units
RθJA Maximum Junction-to-Ambient62.5 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com 1
Si3443DVPbF
HEXFET® Power MOSFET
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
VDSS = -20V
RDS(on) = 0.065Ω
Description
lUltra Low On-Resistance
lP-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
l-2.5V Rated
lLead-Free
Top View
1
2
D
G
A
D
D
D
S
34
5
6
TSOP-6
PD-95240
Si3443DVPbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.7A, VGS = 0V
trr Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = -1.7A
Qrr Reverse Recovery Charge ––– 30 44 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
A
-20
-2.0
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
Starting TJ = 25°C, L = 6.8mH
RG = 25Ω, IAS = -3.0A.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 – –– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.005 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.034 0.065 VGS = -4.5V, ID = -4.4A
––– 0.053 0.090 ΩVGS = -2.7V, ID = -3.7A
––– 0.060 0.100 VGS = -2.5V, ID = -3.5A
VGS(th) Gate Threshold Voltage -0.60 ––– -1.2 V VDS = VGS, I D = -250µA
gfs Forward Transconductance ––– 12 ––– S VDS = -10V, ID = -4.4 A
––– ––– -1.0 µA VDS = -20V, VGS = 0V
––– ––– -5.0 VDS = -20V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
QgTotal Gate Charge –– – 11 15 ID = -4.4A
Qgs Gate-to-Source Charge ––– 2.2 – –– nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 2.9 – –– VGS = -4.5V
td(on) Turn-On Delay Time ––– 12 50 VDD = -10V, VGS = -4.5V
trRise Time ––– 33 60 ns ID = -1.0A
td(off) Turn-Off Delay Time ––– 70 1 00 RG = 6.0 Ω
tfFall Time ––– 72 100 RD = 10 Ω,
Ciss Input Capacitance ––– 1079 ––– VGS = 0V
Coss Output Capacitance ––– 220 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 152 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
Si3443DVPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-5.6A
0.1
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.1
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.1
1
10
100
1.5 2.0 2.5 3.0 3.5
V = -15V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
Si3443DVPbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
04812 16 20 24
0
3
6
9
12
15
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-4.5A
V =-10V
DS
0.1
1
10
100
0.0 0.4 0.8 1.2 1.6 2.0 2.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1 10 100
0
400
800
1200
1600
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
Si3443DVPbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Durati on ( s ec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0
20
40
60
80
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.3A
-2.4A
-3.0A
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature ( C )
-I , Drain Current (A)
°
C
D
Si3443DVPbF
6www.irf.com
TSOP-6 Part Marking Information
TSOP-6 Package Outline
W = ( 1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (2 7-52) IF PRECEDED BY A LETTER
CODE
TOP
PART N UMBER W = WEE K
Y = YEA R
LOT
F = I RF5801
(as shown here) indicates Lead-Free.
Note: A line above the work week
A = SI3443 DV
B = IRF5800
I = IR F5805
D = IRF5851
E = IRF5852
K = IRF5810
C = IRF5850
N = IRF5802
M = IRF5803
PART NUMBER CODE REFERENCE:
L = IRF58 04
J = IRF5806
82008
22002 02
YEAR
2001
Y
1
WORK
01
WEEK
52005
2003
2004 3
4
2006
2007 6
7
04
03 B
W
A
C
D
CC2003 29
2009
2010 9
025
24
26
YYEAR
2001
2002 A
B
WEEK
WORK
28
27
Y
X
Z
W
A
B
J2009
F2006
2004
2005 D
E
2007
2008 G
H
30
2010 K 51
50
D
X
Y
DATE C ODE
Si3443DVPbF
www.irf.com 7
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/05
