MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N916(A)(B) Features * * * 500mW 100 Volt Small Signal Diodes Low Current Leakage Compression Bond Construction Low Cost Maximum Ratings * * * DO-35 Operating Temperature: -55OC to +150 OC Storage Temperature: -55OC to +150OC Maximum Thermal Resistance; 300OC/W Junction To Ambient Electrical Characteristics @ 25OC Unless Otherwise Specified Peak Reverse Voltage Average Rectified Forward Current Power Dissipation Junction Temperature Peak Forward Surge Current Breakdown Voltage Maximum Instantaneous Forward Voltage 1N916 1N916A 1N916B 1N916B Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Reverse Recovery Time Revision: 3 VRM 100V D IF(AV) 200mA PTOT TJ IFSM 500mW 150OC 1.0A 4.0A 100 75 VR A Pulse Width=1.0s Pulse Width=1.0ms IR=100uA IR=5.0uA Cathode Mark B D VF IR 1.0V 1.0V 1.0V 730mV 25nA 5.0uA 50uA CT 2.0pF Trr 4.0nS TJ = 25OC* IFM = 10mA; IFM = 20mA; IFM = 20mA; IFM = 5.0mA; TJ=25OC, V R=20V VR=75V, VR=20V, TJ=150 OC Measured at 1.0MHz, VR=0 IF=10mA VR = 6V, Irr=1.0mA RL=100 OHM C DIMENSIONS DIM A B C D INCHES MIN ------1.000 MAX .166 .079 .020 --- www.mccsemi.com MM MIN ------25.40 MAX 4.2 2.00 .52 --- NOTE 2002/12/31 MCC 1N916(A)(B) 160 120 o o T a= 25 C Reverse Current, IR [nA] Reverse Voltage, VR [V] Ta=25 C 150 140 130 120 100 80 60 40 20 0 110 1 2 3 5 10 20 30 50 Reverse Current, IR [uA] 30 50 70 100 Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100 V 550 750 o o Ta= 25 C Ta= 25 C 500 Forward Voltage, VF [mV] Forward Voltage, VR [mV] 20 R everse V oltage, V R [V] GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 uA 450 400 350 300 250 10 100 700 650 600 550 500 450 1 2 3 5 10 20 30 50 0.1 100 0.2 Forward Current, I F [uA] 0.3 0.5 1 2 3 5 10 Forward Current, I F [m A] Figure 3. Forward Voltage vs Forward Current VF - 1 to 100 uA Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA 900 1.6 o Forward Voltage, VF [mV] Forward Voltage, V F [mV] Ta= 25 C 1.4 1.2 1.0 0.8 800 Typical o Ta= -40 C 700 o Ta= 25 C 600 500 o Ta= +65 C 400 300 0.6 10 20 30 50 100 200 300 500 800 Forward Current, IF [mA] Figure 5. Forward Voltage vs Forward Current VF - 10 to 800 mA Revision: 3 0.01 0.03 0.1 0.3 1 3 10 Forward Current, IF [mA] Figure 6. Forward Voltage vs Ambient Temperature VF - 0.01 - 20 mA (-40 to +65 Deg C) www.mccsemi.com 2002/12/31 MCC 1N916(A)(B) 0.90 4.0 o o Reverse Recovery Time, t rr [ns] TA = 25 C Ta = 25 C Total Capacitance (pF) 3.5 3.0 0.85 2.5 2.0 0.80 1.5 1.0 0.75 0 2 4 6 8 10 12 10 14 30 40 50 60 IF = 10mA - IRR = 1.0 mA - Rloop = 100 Ohms Figure 7. Total Capacitance Figure 8. Reverse Recovery Time vs Reverse Recovery Current 500 Power Dissipation, PD [mW] 500 400 Current (mA) 20 Reverse Recovery Current, Irr [mA] REVERSE VOLTAGE (V) 400 300 300 IF( 200 AV ) - A VE R AG E RE C TIF 200 IED C UR R 100 E NT - mA 100 0 0 50 100 150 0 0 50 100 150 200 o Ambient Temperature ( C) Figure 9. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA) Revision: 3 o Temperature [ C] Figure 10. Power Derating Curve www.mccsemi.com 2002/12/31