SPECIFICATION Device Name : Intelligent Power MOSFET Type Name : F5H018-S Some sass MS5 F aaXc 5 Ege Spec. No. ; ag 8a vpuutd S9eas0% aa: Ss2fog eveaS 25 a2l2av 2 ees $528 seo aw 3 2 BS Soeat 6 mOB59 ERRZEE cesos ous2u tz2I9 fees 8g at a2 erecus piae Begse 28353 [ToS ecys SPeoveo 2ov.g Gg et@oax aw so oO Se ecCLO Pote Futec Fuji Electric Co. , Ltd. Matsumoto Factory DATE NAME APPROVED | DRAWN | July - 1/176) AL fear Fuji Electric Co.Ltd LC CHECKED y) 7 J ; Vly of Ail Pasa OD DWG.NO. MS5F3728 Ves H04-004-07Revised Records Sook Date Classi- Content Applied Drawn Checked | Approved fication date July- lssued d 31-1996 | enactment date - i Ck Feb- 2 - 1944 Change 0/13 page Out view btNo. 425 figures Feb - 25-1949 Pfackch This material and the Information herein ts the property of Fuji Electnc Co.,Ltd, They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.. Ltd. Fuji Electric Co.,Ltd. DWG.NO. MS9F3728 2, 1p H04-004-06Scope This specifies Fuji Intelligent Power MOSFET F5018-S Construction Self-lsolation Structure Output Part; N-channel enhancement mode power MOSFET App! ication For switching Outview K pack (EIAJ SC-63) S-type. (See to 6/13 page) Absolute maximum ratings (at Tj=25C, unless otherwise specified. ) Description Symbol | Characteristics | Unit Conditions Drain-source voltage Voss 40 V DC Gate-source vol tage Vass DC-0.3~7.0| V DC Continuous drain current lo 8 A Tco=25C Maximum power dissipation Po 15 W Tc=25T Operating junction temperature Ty 150 C Storage temperature range Tata -55~150 C Electrical characteristics (at Tj=25 C, unless otherwise specified. ) This material and the Information herein is the property of Fuji Eleetnc Co Ltd. They shall be neither reproduced. copied, lent, or disclosed in any way whatsoever for the use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co., Ltd. Characteristics Description Symbo | Conditions Unit Min. Typ. Max. Drain-source Voss ln =1MA 40 6 0 V clamp vo! tage Ves=0V Gate threshold voltage Vesctn) | ln =10MA 1.0 2. 8 V Vos= 1 3 V . Operation gate voltage Ves @) 3.5 7. 0 V Zero gate voltage loss Vos=30V 1.0 mA drain current Ves=0V Gate-source lesm |# 500|uA leakage current Ves=5V | GS (un) kk 8 0 0 LA Drain-source Rosin | ln =5A 140 ])mQ on-state resistance Ves=5V Forward on voltage Vso lp =24A 2. 0 V * Under normal operation *k Under self protection MS5F3728 0 x [- DWG.NO. Fuji Electric Co.Ltd. H04-004-03This material and the information herein Is the property of Fuji Electnc Co.Ltd They shall be neither reproduced. copied lent, or disclosed in any way whatsoever for the use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co., Ltd. Characteristics Description Symbol Conditions Unit Min. Typ. Max. Turn-on time ton Vos=13V 200) 4s Ri. =26Q Turn-off time tort Ves=5V 200] us Over-temperature Ttrip Ves=5V 150 210] protection Short circuit protection | I oc Ves=5V 12 32 A Single pulse inductive lp =8A load switch-off Ect Ts =1507T 100 m j energy dissipation Thermal resistance Characteristics Description Symbo | Conditions Unit Min. Typ. Max. Rth.j--)| Junction-case 8.3 | C/W Thermal resistance R th j-a)| Junct ion-ambient 125 | C/W Electrostatic discharge Characteristics Description Conditions Unit Min. Typ. Max. Drain-source 150pF, 1509 +15 kV Gate-source +0.5 kV Timing chart Under normal operation | Vas Vos ~~ Short circuit ; over-temperature : Protection protection Under normal operation ye uf | PL Fuji Electric Co.Ltd. DWG.NO. MS5F3728 94, |- H04-004-031 0. Block diagram DRAIN O SOURCE O c oOo I > 3 0 | - oO D i Sof w Q. coc Lo i Pr cS Oo - O | OO - a0 OEY > 0a or Zs GATE Ss M3 H04-004-03 Fuji Electric Co.Ltd. *pr] 0% 91233973 IINy Jo JUaSUOD UalWIM Ssaidxe aU) inoyum sasodsnd Bunioesnuew ay 40) pasn souAled paluyl Aue 4 @sn eyl JO) seABOSIEYM AEM AVE UI PasOjISIP JO 1U9j paido> pasnpada sayrau ag yeys Aay] pi oD IuI2a/3 WIn4 JO Ajsadosd aun s) ujasay UCNewojU) aU! PUB ;eareWw Siyt1 This material and the information herein is the property of Fuji Electnc Co_Ltd. They shalt be neither reproduced. copied. ent. or disclosed in any way whatsoever for the use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co,, Ltd. FU | Type: INTELLIGENT POWER MOS FET F5018-S SS 5.540.2 6.5+0,2 540.2 $4 - = in @) _ eo =~ Type name La tit. | FOO18 al a i | ~" F oOo Lot ee e113 Sub No. | <f5- 2 | ae UW ID ;@OwWi@ m 0,9 8:7 _ S 0.684 ||| 8 2,340.2 2,340.2 BOTTOM VIEW 520.2 440.2 = S #2.540.2 #0.5+0.1 beet 0.540. 1 1,140.2 CONNECT 1 ON @ GATE @G@ DRAIN G) SOURCE JEDEC: TO-252 EJAJ:SC-63 N Ht IX. Pre-Sol der l Notes 1. ( ) + REFERENCE DIMENSIONS. 2. * +: DO NOT INCLUDE SOLDER, ESSE DIMENSIONS ARE IN MILLIMETERS. @) ih DWG.NO. Fuji Electric Co.,Ltd. NSSF 3728 Hs H04-004-03This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party,nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd 10 60 50 40 VDSS[V] 30 20 10 V@S (th) [V] 4 Drain-source clamp voltage VDSS=f (Tj) : 1ID=1mA, VGS=0V ee Re OR CR OR 0 ee Sea er a ee ee ee ee ee Soe wee ee ee ee ee tte we ee Fe ee ee ee eee ee so ee a ee ee ee ee Fe ee ee ee ee ee [UETETETT TROT TT TTT TT TTT ee ea Levereerrpbev rrp does eetdel Liteiiiir eee te ty itary hipaa tiiay 0 -50 0 90 100 150 200 TiC] OQ Gate threshold voltage VGS (th) =f (Tj) : VDS=13V, ID=10mA hea PP ey bob iy Ete oh ae? Z typ. 7 = | l I 1 l l l J I J | | | {oj l l | l | J 4 00 -50 0 50 TIC] 100 150 200 Fuji Electric Co.,Ltd. DWG. NO. MS5F3728 As | H04-004-03This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party,nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd Gate-source leakage current IGS (n) =f (Tj) :VGS=5V, VDS=0V Ur SS 950 [ees s- cece occas rere Loses. 4 200 = =a = 150 & 100 90 [ 7 gu 1 lL 1 | 1 1 1 l l 1 1 1 1 | 1 1 1 1 l 1 1 1 l l l l L_| -100 -50 0 50 100 150 200 TITC] Gate-source leakage current |GS (n) =f (VGS) : T j=25C, VDS=0V 300 pro REET GR EEO ee Eee Ee Ee |e ee D5) Pesnsienpes wasen fe ou me natvews os vot eon oxo 900 + wee eee eee et % WAN Sle Sie eet . sta mueueS + ca aa < _| - : typ. 4 =< ~ i. . . . J = L : : ; : ; 4 150+ See ee ee eee eee eee Pee eee renee 5 i i al % i ; ; ; 1 100 F 3 Ene eee e sees cme re ae on BMC ye ge + 50 F lee. eee (ole, beens lees ; 4 9 Gotti tit 2 3 4 5 6 7 8 VGS[V] Fuji Electric Co.,Ltd. MS5F3728 DWG. NO. La Le H04-004-03This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party,nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd Drain-source on-state resistance RDS (on) =f (Tj) : ID=5A, VGS=5V 200/73 T T | 1 1 1 qT | T 1 1 T | 1 T T T ] T T t 1 | qT t oT 150 a | 2 ll S 100i ao 8 L 50 aya sue & A mse ee nce! ccs ecm mee memnsel ; Y acer axe ce & : Deven tuepcerceet meson om mctay & gla | i l l i I L I I j j l i I 1 } l l j I L 1 i | -50 0 50 100 150 Ti[C] Drain-source on-state resistance RDS (on) =f (Tj) : ID=5A, Tj=25C 200 es a A 150K ------ tresses 533, Bee Se = Se lserei ~ = ss _ Co L | E i < 100 5 T = & r 50 = 0 Littitii ttt ditt ttt 2 3 4 9 6 7 8 V@S[V] Fuji Electric Co.,Ltd. MS5 F3728 DWG. NO. ? M3 H04-004-03This material and the information herein is the property of Fuji Electric Co,Ltd. They shall be neither reproduced, copied, Jent, or disclosed in any way whatsoever for the use of any third party,nor used for the manufacturing purposes without the express written consent of Fuji Electric Co ,Ltd Zero gate voltage drain current IDSS=f (Tj) : VDS=30V, VGS=0V BO Didi Petit 90 40 PEE Pee EET EO ore re Teer ee re. Z 20 = 10F Se ae Se Se es eee Si eee ee EXE SR Bis Sote Jeoa! wea eee Se am 4 E E+ l ff i whip td ee bee dea S00 -50 0 50 100 150 200 TjUC] Turn-on time, Turn-off time ton, tof f=f (Tj) :VG@S=5V, ID=5A, VDS=13V Be (Ue ee ee Pee ets 80 E 4 BS 60e = ot c 7 40F = 20 J E | J 4 | |} | J 1 as oe l | | | J | 1 i 1 l 1 J J _ 00 to -50 0 930 100 150 200 TLC) Fuji Electric Co.,Ltd. MS5 F3728 DWG. NO. [A fh 3 | H04-004-03This material and the information herein is the property of Fuji Electric Co Ltd They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party,nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd Short circuit detection |OC=f (Tj) :VG@S=5V 0p SS prrerprery eee 30 | 29 [- 20 OCA] 15 10 Peppa tea te te ti tL Le TT TT } i jt ere le hela be dg -30 0 50 100 150 200 TjLC] to oS oS Short circuit detection |OC=f (VG@S) :Tj=25C 30 EE ee OEE Ee Eres Ee Ve eh TE LET EReT br ' . . 4 |OCTA] 2 3 4 9 6 qi 8 V@S[V] Fuji Electric Co.,Ltd. a MSSF3728 8 4 DWG. NO. H04-004-03Forward on voltage [F=f (VSD) 2.0 rier pT rere pri hp hd pea ray ea 1.5 VSD[V] peer tee Pe tae tt ti oO Lo oO lo oO LO CoO N N _ _ (WJ 4I 30 | | | @ H04-004-03 MS5F3728 2 ONC Fuji Electric Co.,Ltd. PyT1"09 ouyD9e/F tInJ Jo JussUCS UEQUM ssaldxe au} jnouyim sasodind Bulinjoeynuew sy} JO, pesn Jou'Ayed piu) Aue Jo esn ay} Joy Jaasosyeym AemM Aue Ul Pasojosip JO US| paidos'peonpoidal sauzeu ag yeys Asus pq! 0D aujy9e/F [ny Jo Ayedosd Sy} S$! UlaJay UOIPeUWJOJU! Sy] pUe jeWayeUW SIyLContinuous drain current VS Ambient temperature |D= J (Ta) : Maunting pad size(a)=/mm rere pees pers Tres Terese This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party,nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd = a | | | | | l | 1 l | 1 1 { | 1 J) jut 1 | ae | 1 l 1 i i ot 25 50 75 100 125 150 Ta[C] Mounting pad size VS Drain current ratio Drain current ratio=f (Mounting pad size) 2.5 TT T 7 TT TT T | TTT 4 ] T T T T ] TT TT | TTT oT r ; ; 4 [ ke a i r * i 20br-- i 2s epavaPantessw ioe woe metcvecw ew cealies soe ce = I LILI 4 7 5 a l 1 1 l l L L i] i l L | | | 1 oe | l 1 Lt l l l JL I 0.05 5 10 15 20 25 30 Mounting pad size(a) [mm] Fuji Electric Co.,Ltd. /3 = %B | MS5F3728 DWG. NO. H04-004-03