Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA . . . designed for low power audio amplifier and low-current, high-speed switching applications. * High Collector-Emitter Sustaining Voltage -- VCEO(sus) = 100 Vdc (Min) -- MJE243, MJE253 * High DC Current Gain @ IC = 200 mAdc hFE = 40 - 200 hFE = 40 - 120 -- MJE243, MJE253 * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc * High Current Gain Bandwidth Product -- fT = 40 MHz (Min) @ IC = 100 mAdc * Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB *Motorola Preferred Device IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate @ 25_C Operating and Storage Junction Temperature Range Symbol Value Unit VCEO VCB 100 Vdc 100 Vdc VEB IC 7.0 Vdc 4.0 8.0 Adc IB PD 10 Adc 15 0.12 Watts W/ac PD 1.5 0.012 Watts W/_C TJ, Tstg - 65 to + 150 _C Symbol Max Unit JC JA 8.34 _C/W 83.4 _C/W CASE 77-08 TO-225AA THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case 16 1.6 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 80 100 120 140 TA PD, POWER DISSIPATION (WATTS) TC PD, POWER DISSIPATION (WATTS) Thermal Resistance, Junction to Ambient 0 160 T, TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 -- Vdc -- -- 0.1 0.1 -- 0.1 40 15 180 -- -- -- 0.3 0.6 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCE = 100 Vdc, IE = 0, TC = 125_C) ICBO Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO Adc Adc ON CHARACTERISTICS DC Current Gain (IC = 200 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) -- 1.8 Vdc Base-Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) -- 1.5 Vdc fT 40 -- MHz Cob -- 50 pF DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) VCC + 30 V 1K SCOPE RB D1 51 tr, tf 10 ns DUTY CYCLE = 1.0% -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES Figure 2. Switching Time Test Circuit 2 tr 100 0 t, TIME (ns) +11 V - 9.0 V 500 300 200 RC 25 s 50 30 20 td 10 5 3 2 1 0.01 NPN MJE243 PNP MJE253 VCC = 30 V IC/IB = 10 TJ = 25C 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMPS) 3 5 Figure 3. Turn-On Time Motorola Bipolar Power Transistor Device Data 10 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.02 0.01 0.03 0 (SINGLE PULSE) 0.02 0.01 0.02 0.05 0.1 P(pk) JC(t) = r(t) JC JC = 8.34C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.05 0.1 0.07 0.05 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 t1 t2 DUTY CYCLE, D = t1/t2 20 50 100 200 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 100 s 5.0 2.0 1.0 ms 1.0 dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.5 0.2 0.1 0.05 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150 _ C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 500 s 5.0 ms v 0.02 0.01 1.0 MJE243/MJE253 50 70 100 2.0 3.0 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area 10K 200 ts t, TIME (ns) 1K VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C TJ = 25C 100 C, CAPACITANCE (pF) 5K 3K 2K 500 300 200 100 50 30 20 10 0.01 Cib 70 50 30 Cob 20 tf MJE243 (NPN) MJE253 (PNP) NPN MJE243 PNP MJE253 0.2 0.3 0.5 1 2 0.02 0.03 0.05 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 6. Turn-Off Time Motorola Bipolar Power Transistor Device Data 3 5 10 10 1.0 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Figure 7. Capacitance 3 NPN MJE243 PNP MJE253 500 VCE = 1.0 V VCE = 2.0 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 300 200 200 TJ = 150C 25C 100 70 50 - 55C 30 20 10 7.0 5.0 0.04 0.06 0.1 1.0 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 25C - 55C 30 20 10 7.0 5.0 3.0 2.0 0.04 0.06 4.0 VCE = 1.0 V VCE = 2.0 V TJ = 150C 100 70 50 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 8. DC Current Gain 1.4 1.4 TJ = 25C 1.2 1.2 1.0 1.0 0.8 0.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25C VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V IC/IB = 10 0.4 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 1.0 V 0.6 0.4 IC/IB = 10 5.0 5.0 0.2 0.2 VCE(sat) 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 VCE(sat) 0 0.04 0.06 0.1 4.0 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1.0 2.0 4.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltages + 2.0 V, TEMPERATURE COEFFICIENTS (mV/ C) V, TEMPERATURE COEFFICIENTS (mV/ C) + 2.5 *APPLIES FOR IC/IB hFE/3 + 1.5 + 1.0 + 0.5 *VC FOR VCE(sat) 0 - 55C to 25C - 0.5 - 1.0 - 1.5 - 2.0 25C to 150C 25C to 150C VB FOR VBE - 2.5 0.04 0.06 0.1 - 55C to 25C 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 + 2.5 + 2.0 *APPLIES FOR IC/IB hFE/3 + 1.5 + 1.0 + 0.5 25C to 150C *VC FOR VCE(sat) 0 - 55C to 25C - 0.5 - 1.0 - 1.5 25C to 150C VB FOR VBE - 55C to 25C - 2.0 - 2.5 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients 4 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA ISSUE V Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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