EGP30FHE3/73 - Vishay Semiconductors

EGP30A, EGP30B, EGP30C, EGP30D, EGP30F, EGP30G

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Revision: 13-Jun-16 1Document Number: 88584

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Glass Passivated Ultrafast Plastic Rectifier

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

• Low leakage current

• Low switching losses, high efficiency

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer and telecommunication.

MECHANICAL DATA

Case: GP20, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 3.0 A

VRRM 50 V, 100 V, 150 V, 200 V, 300 V, 400 V

IFSM 125 A

trr 50 ns

VF0.95 V, 1.25 V

TJ max. 150 °C

Package GP20

Diode variations Single die

GP20

SUPERECTIFIER

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT

Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V

Maximum RMS voltage VRMS 35 70 105 140 210 280 V

Maximum DC blocking voltage VDC 50 100 150 200 300 400 V

Maximum average forward rectified current

0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 3.0 A

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load IFSM 125 A

Operating and storage temperature range TJ, TSTG -65 to +150 °C

EGP30A, EGP30B, EGP30C, EGP30D, EGP30F, EGP30G

www.vishay.com Vishay General Semiconductor

Revision: 13-Jun-16 2Document Number: 88584

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT

Maximum instantaneous

forward voltage 3.0 A VF0.95 1.25 V

Maximum DC

reverse current at rated

DC blocking voltage

TA = 25 °C

5.0

μA

TA = 125 °C 100

Maximum reverse

recovery time

IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A trr 50 ns

Typical junction

capacitance 4.0 V, 1 MHz CJ85 75 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT

Typical thermal resistance RJA (1) 20 °C/W

RJL (1) 8.0

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

EGP30G-E3/54 1.01 54 1400 13" diameter paper tape and reel

EGP30G-E3/73 1.01 73 1000 Ammo pack packaging

2.0

3.0

1.0

25 50 75 100 125 150 175

Average Forward Rectied Current (A)

Ambient Temperature (°C)

Resistive or Inductive Load

0.375" (9.5 mm) Lead Length

110 100

100

125

150

175

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

= T

Max.

8.3 ms Single Half Sine-Wave

EGP30A, EGP30B, EGP30C, EGP30D, EGP30F, EGP30G

www.vishay.com Vishay General Semiconductor

Revision: 13-Jun-16 3Document Number: 88584

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0.1

100

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

TJ = 150 °C

TJ = 25 °C

Pulse Width = 300 μs

1 % Duty Cycle

EGP30A thru EGP30D

EGP30F and EGP30G

020 40 60 80

0.001

0.01

0.1

100

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (μA)

= 150 °C

= 125 °C

= 25 °C

= 75 °C

120

150

180

210

1 10 100 1000

Reverse Voltage (V)

Junction Capacitance (pF)

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

EGP30A thru EGP30D

EGP30F and EGP30G

0.01 0.1 110 100

0.1

100

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

GP20

1.0 (25.4)

MIN.

0.375 (9.5)

0.285 (7.2)

1.0 (25.4)

MIN.

0.210 (5.3)

0.190 (4.8)

DIA.

0.042 (1.07)

0.037 (0.94)

DIA.

Legal Disclaimer Notice

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Revision: 08-Feb-17 1Document Number: 91000

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

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