ee FAIRCHILD er ee SEMICONDUCTOR u FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features = -1.3.A,-20 V. Rogioy = 0.20.0 @ Vig = -4.5 V Rogiany = 0-27 Q @ Vac= -2.5 V. = Low gate charge (3.6 nC typical). = High performance trench technology for extremely low DS(ON)" = High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. November 1998 SOT-23 D SuperSOT3 G G Absolute Maximum Ratings = T, = 25C unless other wise noted Symbol | Parameter FDN336P Units Vose Drain-Source Voltage -20 V Vass Gate-Source Voltage +8 ln Drain Current - Continuous 13 - Pulsed -10 Py Maximum Power Dissipation (Note ta) 05 W {Note 1b) 046 Ty Ter Operating and Storage Temperature Range -55 to +150 THERMAL CHARACTERISTICS Raa Thermal Resistance, Junction-to-Ambient (Note 1a) 250 SCAN Rac Thermal Resistance, Junction-to-Case (Note 1) 75 SCAN 1998 Fairchild Semiconductor Gorperation FDN336P Rev CHectrical Characteristics (T, = 25 C unless otherwise noted ) Symbol | Parameter | Conditions | Min | Typ | Max | Units OFF CHARACTERISTICS BY nse Drain-Source Breakdown Voltage Veg = OV, I,=-250 LA -20 V ABV scalAT,, Breakdown Voltage Temp. Coefficient |,=-250 YA, Referenced to 25C -16 mV fC lage Zero Gate Voltage Drain Current Veg =-16V, V,g=0V -1 pA Ty = 55C -10 HA Ieee Gate - Body Leakage, Forward Vag = BV, Vig = OV 100 nA Inesr Gate - Body Leakage, Reverse Vag= BV, Vig= OV -100 nA ON CHARACTERISTICS note 2) Vestry Gate Threshold Voltage Vog = Vee |p = -250 pA 04 0.9 -1.5 Vv MV inf AT, Gate Threshold Voltage Temp. Coefficient |, = -250 HA, Referenced to 25C 3 m fC Fosiany Static Drain-Source On-Resistance Veg= 45V, 1, =-13A 0.122 | 02 oO [T, =125C 0.18 | 0.32 Vag=-2.5V, 1 ,=-11A 0.19 | 027 Ivan) On-State Drain Current Vag= 45V, Vig =-5V 5 A Os Forward Transconductance Vag =-4.5V, =-2A 4 s DYNAMIC CHARACTERISTICS C.. Input Capacitance Vag = 10 V, V,.=0V 330 pF Coss Output Capacitance f = 1.0 MHz 80 pF Coos Reverse Transfer Capacitance 35 pF SWITCHING CHARACTERISTICS wow2) boy Turn - On Delay Time Vip =-BV, 1, =-05A, 7 15 ns t Turn - On Rise Time Vag 45 V, Recy = 6 O 12 22 ns tora Turn - Off Delay Time 16 26 ns t Turn - Off Fall Time 5 12 ns Q, Total Gate Charge Vog=-10V, 1,=-2A, 3.6 5 nc a, Gate-Source Charge Veg = 45 V 038 nc Q,, Gate-Drain Charge 07 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I, Maximum Continuous Drain-Source Diode Forward Current -0.42 A Vep Drain-Source Diode Forward Voltage Vag = OV, =-O42A wots 0.7 -1.2 Vv Note 1 Ry, is the sum of the junction-to-case and case-to-ambiant thermal resistance where the case thermal reference is defined as tha solder mounting surface of the drain ping Ry, is guaranteed by design while R,., Is determined by the user's board design i" a 250CAW when mounted on if es a0 02 Ir? pad of 20z Cu b 270CAV when mounted on if a0 004 in* pad of 202 Cu Scale 1 1 on letter size paper 2 Pulse Test Pulse Width < 300us Duty Cycle < 2 0% FDN336P Rev CTypical Electrical Characteristics - p DRAIN-SSOURCE CURRENT (A) 0 1 2 3 4 5 pg PRAIN-SOURCE VOLTAGE (} Figure 1. Gn-Region Characteristics. Ip = -1.3A tat Veg = -15 Le O68 Rostony NORMALIZED DRAIN-SCUAGE ON-RESISTANGE OG -50 25 0 25 50 75 100 125 150 yy JUNGTION TEMPERATURE ( Cy Figure 3. On-Resistance Variation with Temperature. + Vog = -5 Ty=-85C 25C 125C -Ip DRAIN CURRENT (A) A os 1 15 2 35 Vag GATE TO SOURCE VOLTAGE () Figure 5. Transfer Characteristics. uw a & gb Moo a WwW & = & Fw Oo ec zg 2 Bt Tz & a -lp DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate os = z= S04 Wy ao Zz Zo3 o wn w r 202 9 Ta= 126C 5 wot " & 25C a 0 2 4 6 & 10 - Vag GATE TO SQURCE VOLTAGE () Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 = Eb 2 uw r 1 2 oO Zz @ ot a uw wo c uu m oot c wa cool O2 o4 OG 08 1 12 14 gp BODY DIODE FORWARD VOLTAGE (Vv) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN336P Rev CTypical Electrical Characteristics (continued) I a a + p S a w nh a a hn CAPAGITANGE (pF) 3 a gg GATE-SOURCE VOLTAGE (V} 40} $= 1MHz Ves = OV Qo 8 ' B 3 4 O14 O2 O56 1 2 5 16 20 Qg GATE CHARGE (nC} Vos DRAIN TO SOURGE VOLTAGE () Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 30 50 10 _ an SINGLE PULSE x 3 Raa =270CW B _ Ta = 25C oe = a0 c 1 cc a uw e = z 03 9 20 5S oy Veg = -4.5 A SINGLE PULSE 10 oog Raa =270CAV Ta = 25C 3 oo 60001 0001 oot o1 1 10 100 300 be os | 3 10 30 SINGLE PULSE TIME (SEG) Vpg ODRAIN-SOQURCE VOLTAGE (} Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. a ao Raatl=rt) Agua Raa = 270 CAW 005 P(pk} 002 oOo oO = 6 rit) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE i tad oot = te ~! 0.005 Ty- Ty =P * Raga it) Duty Cycle D=t, Fp 0 Doz 9001 2.0004 cool oot 01 1 10 100 300 4 TIME {sec} Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described In Nate 1b Transient thermal regponge will change depending on the circuit board degign FDN336P Rev CTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT QS FACT Quiet Series Quite Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE GHANGES WITHOUT FURTHER NOTIGE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNGTION OR DESIGN. FAIRGHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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