©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
KSP2222A Rev. B
KSP2222A NPN General Purpose Amplifier
tm
July 2006
KSP2222A
NPN General Purpose Amplifier
Features
Collector-Emitter Voltage: VCEO= 40V
Collector Power Dissipation: PC (max)=625mW
Available as PN2222A
Absolute Maximum Ratings * Ta = 25°C unless othe rwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Ta=25°C unless otherwise noted
Electrical Characteristics * Ta = 25°C unless otherwise noted
* DC Item are tested by Pulse Test : Pulse Width300 us, Duty Cycle2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector current 600 mA
TJJunction Temperature +150 °C
Tstg Storage Temperature -55 ~ +150 °C
Symbol Parameter Max Units
PCCollector Power Dissipation, by RθJA 625 mW
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
Symbol Parameter Test Condition Min. Typ. Max. Units
V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 75 V
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 V
ICBO Collector Cutoff Current VCB = 60V, IE = 0 0.01 µA
IEBO Emitter Cutoff Current VEB = 3.0V, IC = 0 10 nA
hFE DC Current Gain VCE = 10V, IC = 0.1mA,
VCE = 10V, IC = 1mA,
VCE = 10V, IC = 10mA,
VCE = 10V, IC = 150mA,
VCE = 10V, IC = 500mA,
35
50
75
100
40 300
VCE(sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.3
1V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.6 1.2
2.0 V
V
fTCurrent Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz 300 MHz
Cobo Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 8pF
tON Turn On Time VCC= 30V, IC = 150mA,
IB1= 15mA, VBE(off)= 0.5V 35 ns
tOFF Turn Off Time VCC= 30V, IC = 150mA,
IB1= IB1 = 15mA 285 ns
NF Noise Figure IC = 100µA, VCE= 10V,
RS= 1K , f = 1.0KHz 4dB
1. Emitter 2. Base 3. Collector
TO-92
1 2 3
2www.fairchildsemi.com
KSP2222A Rev. B
KSP2222A NPN General Purpose Amplifier
Package Dimensions
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1
.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.1
0
–0.0
5
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
Rev. I20
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Datasheet Identification Product S tatus Defi nition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.