©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
KSP2222A Rev. B
KSP2222A NPN General Purpose Amplifier
tm
July 2006
KSP2222A
NPN General Purpose Amplifier
Features
•Collector-Emitter Voltage: VCEO= 40V
• Collector Power Dissipation: PC (max)=625mW
• Available as PN2222A
Absolute Maximum Ratings * Ta = 25°C unless othe rwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Ta=25°C unless otherwise noted
Electrical Characteristics * Ta = 25°C unless otherwise noted
* DC Item are tested by Pulse Test : Pulse Width≤300 us, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector current 600 mA
TJJunction Temperature +150 °C
Tstg Storage Temperature -55 ~ +150 °C
Symbol Parameter Max Units
PCCollector Power Dissipation, by RθJA 625 mW
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
Symbol Parameter Test Condition Min. Typ. Max. Units
V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 75 V
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 V
ICBO Collector Cutoff Current VCB = 60V, IE = 0 0.01 µA
IEBO Emitter Cutoff Current VEB = 3.0V, IC = 0 10 nA
hFE DC Current Gain VCE = 10V, IC = 0.1mA,
VCE = 10V, IC = 1mA,
VCE = 10V, IC = 10mA,
VCE = 10V, IC = 150mA,
VCE = 10V, IC = 500mA,
35
50
75
100
40 300
VCE(sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.3
1V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.6 1.2
2.0 V
V
fTCurrent Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz 300 MHz
Cobo Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 8pF
tON Turn On Time VCC= 30V, IC = 150mA,
IB1= 15mA, VBE(off)= 0.5V 35 ns
tOFF Turn Off Time VCC= 30V, IC = 150mA,
IB1= IB1 = 15mA 285 ns
NF Noise Figure IC = 100µA, VCE= 10V,
RS= 1KΩ , f = 1.0KHz 4dB
1. Emitter 2. Base 3. Collector
TO-92
1 2 3
2www.fairchildsemi.com
KSP2222A Rev. B
KSP2222A NPN General Purpose Amplifier
Package Dimensions
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1
.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.1
0
–0.0
5
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
Rev. I20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life sup port devices or systems a re devices or syst ems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) wh ose failure to pe rform when pr operly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definiti on of Terms
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Serie s™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SW I TCHER®
SMART ST ART ™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
UltraFET®
VCX™
Wire™
Across the board. Around the world.™
The Power Franchise ®
Programmable Active Droop™
Datasheet Identification Product S tatus Defi nition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
