2N4898X
2N4899X
2N4900X
Prelim. 9/96
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
V(BR)CBO Collector – Base Breakdown Voltage
V(BR)CEO Collector – Emitter Breakdown Voltage
V(BR)EBO Emitter – Base Breakdown Voltage
ICContinuous Collector Current
IBBase Current
PDTotal Power Dissipation
TCOperating Case Temperature Range
Tstg Storage Temperature Range
RθJC Thermal Resistance , Junction To Case
2N4898X 2N4899X 2N4900X
–40V –60V –80V
–40V –60V –80V
–5V
–4A
–1A
25W
–65 to +200°C
–65 to +200°C
7.0°C/W
MECHANICAL DATA
Dimensions in mm (inches)
24.33 (0.958)
24.43 (0.962)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max. 3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
PNP EPITAXIAL BASE
MEDIUM POWER
TRANSISTOR
APPLICATIONS
Medium power, low frequency PNP
bipolar transistor in a hermetically
sealed TO–66 metal package.
TO–66 Metal Package.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
2N4898X
2N4899X
2N4900X
Prelim. 9/96
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Units
VCE = –30V IB=0
VCE =V
(BR)CEO VBE = –1.5V
TC= 150°C
VCB =V
(BR)CBO IE=0
VCE =V
(BR)CEO VBE =0
IC= –1A IB= –0.1A
IC= –1A IB= –0.1A
IC= –1A VCE = –1V
VCE = –1V IC= –50mA
VCE = –1V IC= –500mA
VCE = –1V IC= –1A
VCE = –10V IC= –250mA
f=1MHz
ICEO Collector – Emitter Cut-off Current
ICEX Collector – Emitter Cut-off Current
ICBO Collector – Base Cut-off Current
ICES Collector – Emitter Leakage
Current
VCE(sat)*Collector – Emitter Saturation
Voltage
VBE(sat)*Base – Emitter Saturation Voltage
VBE*Base – Emitter Voltage
hFE*DC Current Gain
ftTransition Frequency
0.50
100
1.0
0.1
100
–0.60
–1.3V
–1.3V
40
20 130
10
3.0
mA
µA
mA
mA
µA
V
V
V
—
MHz
Electrical Characteristics (TC= 25°C unless otherwise stated.)
* Pulse Test: tp= 300µs, δ= 2%.
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PRODUCT Polarity Package VCEO IC(cont) HFE(min) HFE(max) @ VCE/ICFTPD
2N4899X PNP TO66 60V 4A 20 175 1/0.5 3MHz 25W
2N4899X-JQR-B PNP TO66 60V 4A 20 175 1/0.5 3MHz 25W
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