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DATA SH EET
Product data sheet
Supersedes data of 1997 Sep 03
1999 Apr 12
DISCRETE SEMICONDUCTORS
BC859W; BC860W
PNP general purpose transistors
db
ook, halfpage
M3D187
1999 Apr 12 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BC859W; BC860W
FEATURES
•Low current (ma x. 10 0 mA)
•Low voltage (max. 45 V).
APPLICATIONS
•Low noise stages in tape recorders, hi-fi amplifiers and
other audio- frequency equip men t.
DESCRIPTION
PNP transistor in a SOT323 pl as tic package.
NPN complements: BC849W and BC850W.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE
BC859W 4D∗BC860W 4H∗
BC859BW 4B∗BC860BW 4F∗
BC859CW 4C∗BC860CW 4G∗
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter
BC859W − −30 V
BC860W − −50 V
VCEO collector-emitter voltage open base
BC859W − −30 V
BC860W − −45 V
VEBO emitter-base voltage open collector − −5 V
ICcollector current (DC) − −100 mA
ICM peak collector current − −200 mA
IBM peak base current − −200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 12 3
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC859W; BC860W
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = −30 V − − −15 nA
IE = 0; VCB = −30 V; Tj = 150 °C− − −4μA
IEBO emitter cut-off current IC = 0; VEB = −5 V − − −100 nA
hFE DC current gain IC = −2 mA; VCE = −5 V;
see Figs 2 and 3
BC859W; BC860W 220 −800
BC859BW; BC860BW 220 −475
BC859CW; BC860CW 420 −800
VCEsat collector-emitter saturation
voltage IC = −10 mA; IB = −0.5 mA − − −300 mV
IC = −100 mA; IB = −5 mA; note 1 − − −650 mV
VBE base-emitter vo ltage IC = −2 mA; VCE = −5 V 600 −750 mV
IC = −10 mA; VCE = −5 V − − 820 mV
Cccollector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − − 5pF
Ceemitter cap a citance IC = ic = 0; VEB = −500 mV; f = 1 MHz −10 −pF
fTtransition freque ncy IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz
Fnoise figure;
BC859W; BC860W;
BC859BW; BC860 BW;
BC859CW; BC860CW
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 10 Hz to 15.7 kHz − − 4dB
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz − − 4dB
1999 Apr 12 4
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC859W; BC860W
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
300
200
100
400
MBH727
−10
−2
−10
−1
hFE
−1IC (mA)
−10 −10
3
−10
2
VCE = −5 V
BC859BW; BC860BW.
Fig.3 DC current gain; typical values.
handbook, full pagewidth
0
300
200
100
600
500
400
MBH728
−10
−2
−10
−1
hFE
−1IC (mA)
−10 −10
3
−10
2
VCE = −5 V
BC859CW; BC860CW.
1999 Apr 12 5
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC859W; BC860W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT32
3
97-02-28
1999 Apr 12 6
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC859W; BC860W
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, au thorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any incons istency or conflict betw een information
in this document an d such terms and conditio ns, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for accept ance or the grant, c onveyance or
implication of any license under any copyrights, patents or
other industr i al or inte llectual property ri gh ts.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
For additional information p lease visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 115002/00/04/pp7 Date of releas e: 1999 Apr 12 Document order number: 9397 750 05583
