tm QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC(R) Photosensor Features Description Bipolar silicon IC The QSE25x family are OPTOLOGIC(R) ICs which feature a Schmitt trigger at output which provides hysteresis for noise immunity and pulse shaping. The basic building block of this IC consists of a photodiode, a linear amplifier, voltage regulator, Schmitt trigger and four output options. The TTL/LSTTL compatible output can drive up to ten TTL loads over supply currents from 4.5 to 16.0 Volts. The devices are marked with a color stripe for easy identification. Package type: Sidelooker Medium wide reception angle, 50 Package material and color: black epoxy Daylight filter High sensitivity Direct TTL/LSTTL interface Package Dimensions 2.15 2.35 o 1.39 1.65 5 TYP ON ALL SIDES 1.14 4.35 1.40 5.85 0.67 0.77 12.7 MIN Part Number Definitions 1.17 1.37 2.34 2.74 GND Vcc Vout 1.45 1.71 4.38 4.62 0.52 0.76 0.25 0.51 Note: 1. Dimensions for all drawings are in millimeters. (c)2004 Fairchild Semiconductor Corporation QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1 Color Code QSE256 Totem-Pole, buffer output QSE257 Totem-Pole, inverter output Yellow Red QSE258 Open-collector, buffer output Green QSE259 Open-collector, inverter output Blue Input/Output Table Part Number Light Output QSE256 On HIGH Off LOW QSE257 On LOW Off HIGH QSE258 On HIGH Off LOW QSE259 On LOW Off HIGH www.fairchildsemi.com QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC(R) Photosensor August 2012 VOLTAGE REGULATOR LA VOLTAGE REGULATOR VCC VCC LA VOUT VOUT GND GND QSE257 Totem-Pole Output Inverter QSE256 Totem-Pole Output Buffer VCC VCC VOLTAGE REGULATOR VOLTAGE REGULATOR VOUT VOUT LA LA GND GND QSE259 Open-Collector Output Inverter QSE258 Open-Collector Output Buffer Absolute Maximum Ratings (TA = 25C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter TOPR Operating Temperature TSTG Storage Temperature Rating Unit -40 to +85 C -40 to +100 C TSOL-I Soldering Temperature (Iron)(2,3,4) 240 for 5 sec C TSOL-F Soldering Temperature (Flow)(2,3) 260 for 10 sec C IO Output Current 50 mA VCC Supply Voltage 4.0 to 16 V VO Output Voltage 35 V PD Power Dissipation(1) 100 mW Notes: 1. Derate power dissipation linearly 2.50mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip 1/16" (1.6mm) minimum from housing. (c)2004 Fairchild Semiconductor Corporation QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1 www.fairchildsemi.com 2 QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC(R) Photosensor Block Diagrams Symbol Ee(+) Parameter Positive Going Threshold Irradiance(5) Test Conditions TA = 25C Ee(+)/Ee(-) Hysteresis Ratio ICC Min. Typ. Max. Units 0.025 0.250 mW/cm2 1.10 2.00 Supply Current(5) Ee = 0 or 0.3mW/cm2 5.0 mA Peak to Peak Ripple which will Cause False Triggering f = DC to 50MHz 2.00 V QSE256 (Buffer Totem Pole) VOH High Level Output Voltage(5) Ee = 0.3mW/cm2, IOH = -10mA VOL Low Level Output Voltage Ee = 0, IOL = 16mA 2.4 V 0.40 V QSE257 (Inverter Totem Pole) VOH VOL High Level Output Voltage Low Level Output Voltage(5) Ee = 0, IOH = -10mA Ee = 0.3mW/cm2, 2.4 V IOL = 16mA 0.40 V QSE258 (Buffer Open Collector) IOH High Level Output Current(5) Ee = 0.3mW/cm2, VOH = 30V 100 A VOL Low Level Output Voltage Ee = 0, IOL = 16mA 0.40 V Ee = 0, VOH = 30V 100 A 0.40 V 70 nS QSE259 (Inverter Open Collector) IOH VOL High Level Output Current Low Level Output Voltage(5) Ee = 0.3mW/cm2, IOL = 16mA QSE256, QSE257 tR, tF tPHL, tPLH Output Rise, Fall Times Propagation Delay Ee = 0 or 0.3mW/cm2, f = 10kHz, DC = 50%, RL = 360(5) 6.0 S QSE258, QSE259 tR, tF tPHL, tPLH Output Rise, Fall Times Propagation Delay Ee = 0 or 0.3mW/cm2, f = 10kHz, DC = 50%, RL = 360(5) 100 6.0 nS S Note: 5. = 880nm (AlGaAs). (c)2004 Fairchild Semiconductor Corporation QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1 www.fairchildsemi.com 3 QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC(R) Photosensor Electrical Characteristics (TA = -40C to +85C, VCC = 4.5V to 5.5V) Fig. 2 Output Voltage vs. Input Current (Buffers) Fig. 1 Output Voltage vs. Input Current (Inverters) 6 6 VCC = 5 V RL = 270 TA = 25C d = 4mm VO- Output Voltage (V) 4 3 IF (OFF) VCC = 5 V RL = 270 TA = 25C d = 4mm 5 VO- Output Voltage (V) VOH 5 IF (ON) 2 VOH 4 3 IF (OFF) IF (ON) 2 1 1 VOL VOL 0 0 0 1 2 3 4 0 5 1 2 IF - Input Current (mA) Fig. 3 Threshold Current vs. Distance 4 5 Fig. 4 Normalized Threshold Current vs. Supply Voltage 10 8 6 1.6 IF - Normalized Threshold Current IF(ON) - Normalized Threshold Current 3 IF - Input Current (mA) 4 2 Normalized to: VCC = 5 V RL = 270 TA = 25C d = 4mm Pulsed 100Hz PW = 100s 1.0 0.8 0.6 0.4 0.2 Normalized to: Turn ON Threshold VCC = 5 V TA = 25C 1.4 1.2 IF (ON) 1.0 0.8 IF (OFF) 0.6 0.4 0.2 0.1 0.0 0 2 4 6 8 10 12 14 0 d - Distance (mm) (c)1.0.1 Fairchild Semiconductor Corporation QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1 2 4 6 8 10 12 14 16 VCC - Supply Voltage (V) www.fairchildsemi.com 4 QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC(R) Photosensor Typical Performance Curves (Sensor Coupled to QEE113 Emitter) Fig. 5 Normalized Threshold Current vs. Ambient Temperature Fig. 6 Low Output Voltage vs. Output Current 1 Normalized to: VCC = 5 V TA = 25C 1.6 VCC = 5 V TA = 25C IF = 10 mA 1.4 VOL- Output Voltage, Low (V) IF - Normalized Threshold Current 1.8 IF (OFF) 1.2 IF (ON) 1.0 IF (ON) 0.8 IF (OFF) 0.6 0.4 0.1 0.2 0.01 0.0 -40 -20 0 20 40 60 80 1 100 1 0 IO - Output Current (mA) TA - Ambient Temperature (C) Fig. 7 Response Time vs. Forward Current 5 VCC = 5 V RL = 270 TA = 25C IF Pulsed T = 10 ms Duty Cycle = 50% Response Delay Time (s) 4 3 TPLH 2 TPHL 1 0 0 5 10 15 20 IF - Forward Current (mA) (c)1.0.1 Fairchild Semiconductor Corporation QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1 www.fairchildsemi.com 5 QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC(R) Photosensor Typical Performance Curves (Sensor Coupled to QEE113 Emitter) (Continued) C2 5V R1 R2 .1 uf bypass Pulse Generator VO = 5V f = 10 KHz d.c. = 50% R 1 = 360 R 2 = 180 C1 GND C 1 and C2 include probe and stray wire capacitance C 1 = 15 pf C 2 = 20 pf Fig. 10 Switching Times Definition for Inverters Fig. 9 Switching Times Definition for Buffers 50% 50% 0 mA 0 mA t PLH t PLH t PHL t PHL VOH VOH Output VO 90% 10% 10% 90% Output VO 50% 90% 10% VOL tr (c)1.0.1 Fairchild Semiconductor Corporation QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1 90% 10% VOL tf tf tr www.fairchildsemi.com 6 QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC(R) Photosensor Fig. 8 Switching Speed Test Circuit QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC(R) Photosensor (c)2004 Fairchild Semiconductor Corporation QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1 www.fairchildsemi.com 7