The Smart Timing Choice
The Smart Timing Choice
SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Rev. 1.0 Revised June 12, 2013
SiT8009
High Frequency, Low Power Oscillator
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
Features Applications
Any frequency between 115 MHz and 137 MHz accurate to 6 decimal
places
Ideal for GPON/GPON, network switches, routers. servers,
embedded systems
Operating temperature from -40°C to 85°C. Refer to SiT8918 and
SiT8920 for high temperature options
Ideal for Ethernet, PCI-E, DDR, etc.
Excellent total frequency stability as low as ±20 PPM
Low power consumption of 4.8 mA (typical in 1.8V)
Output enable or standby mode
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with Time Machine II and field programmable
oscillators
Pb-free, RoHS and REACH compliant
Electrical Characteristics[1]
Parameter and Conditions Symbol Min. Typ. Max. Unit Condition
Frequency Range
Output Frequency Range f 115 – 137 MHz
Frequency Stability and Aging
Frequency Stability F_stab -20 – +20 PPM Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage and load.
-25 – +25 PPM
-50 – +50 PPM
Operating Temperature Range
Operating Temperature Range T_use -20 – +70 °C Extended Commercial
-40 – +85 °C Industrial
Supply Voltage and Current Consumption
Supply Voltage Vdd 1.62 1.8 1.98 V Contact SiTime for 1.5V support
2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.7 3.0 3.3 V
2.97 3.3 3.63 V
2.25 – 3.63 V
Current Consumption Idd –6.27.5mA
No load condition, f = 125 MHz, Vdd = 2.8V, 3.0V, 3.3V or 2.25
to 3.63V
– 5.4 6.4 mA No load condition, f = 125 MHz, Vdd = 2.5V
– 4.8 5.6 mA No load condition, f = 125 MHz, Vdd = 1.8V
OE Disable Current I_OD – – 4 mA Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down
– – 3.8 mA Vdd = 1.8V, OE = GND, output is Weakly Pulled Down
Standby Current I_std –2.64.3AST = GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down
–1.42.5AST = GND, Vdd = 2.5V, Output is Weakly Pulled Down
–0.61.3AST = GND, Vdd = 1.8V, Output is Weakly Pulled Down
LVCMOS Output Characteristics
Duty Cycle DC 45 – 55 % All Vdds
Rise/Fall Time Tr, Tf – 1 2 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
– 1.3 2.5 ns Vdd =1.8V, 20% - 80%
– 0.8 2 ns Vdd = 2.25V - 3.63V, 20% - 80%
Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V)
Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V)
Input Characteristics
Input High Voltage VIH 70% – – Vdd Pin 1, OE or ST
Input Low Voltage VIL ––30%Vdd
Pin 1, OE or ST
Input Pull-up Impedence Z_in – 87 100 kPin 1, OE logic high or logic low, or ST logic high
2––MPin 1, ST logic low
The Smart Timing Choice
The Smart Timing Choice
SiT8009
High Frequency, Low Power Oscillator
Rev. 1.0 Page 2 of 11 www.sitime.com
1 4
OE/ST VDD
32
GND OUT
Top View
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
Notes:
2. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment.
3. A capacitor value of 0.1 µF between Vdd and GND is recommended.
Electrical Characteristics[1] (continued)
Parameter and Conditions Symbol Min. Typ. Max. Unit Condition
Startup and Resume Timing
Startup Time T_start – – 5 ms Measured from the time Vdd reaches its rated minimum value
Enable/Disable Time T_oe – – 130 ns f = 115 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Resume Time T_resume – – 5 ms Measured from the time ST pin crosses 50% threshold
Jitter
RMS Period Jitter T_jitt – 1.93 3 ps f = 125 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
– 1.64 4 ps f = 125 MHz, Vdd = 1.8V
RMS Phase Jitter (random) T_phj – 0.5 0.9 ps
Integration bandwidth = 900 kHz to 7.5 MHz
–1.32 ps
Integration bandwidth = 12 kHz to 20 MHz
Pin Description
Pin Symbol Functionality
1OE/ ST
Output
Enable
H or Open[2]: specified frequency output
L: output is high impedance. Only output driver is disabled.
Standby
H or Open[2]: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
2 GND Power Electrical ground[3]
3 OUT Output Oscillator output
4 VDD Power Power supply voltage[3]
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-
mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Storage Temperature -65 150 °C
VDD -0.5 4 V
Electrostatic Discharge – 2000 V
Soldering Temperature (follow standard Pb free soldering guidelines) –260°C
Junction Temperature –150°C
Thermal Consideration
Package
JA, 4 Layer Board
(°C/W)
JA, 2 Layer Board
(°C/W)
JC, Bottom
(°C/W)
7050 191 263 30
5032 97 199 24
3225 109 212 27
2520 117 222 26
2016 124 227 26
Environmental Compliance
Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260°C
The Smart Timing Choice
The Smart Timing Choice
SiT8009
High Frequency, Low Power Oscillator
Rev. 1.0 Page 3 of 11 www.sitime.com
Notes:
5. SiT8009 supports no runt pulses and no glitches during startup or resume.
6. SiT8009 supports gated output which is accurate within rated frequency stability from the first cycle.
Test Circuit and Waveform[4]
Figure 1. Test Circuit
Note:
4. Duty Cycle is computed as Duty Cycle = TH/Period.
Figure 2. Waveform
Timing Diagrams
Figure 3. Startup Timing (OE/ST Mode) Figure 4. Standby Resume Timing (ST Mode Only)
Figure 5. OE Enable Timing (OE Mode Only) Figure 6. OE Disable Timing (OE Mode Only)
4
1
3
2
0.1µF
Power
Supply
OE/ST Function
Test
Point
15pF
(including probe
and fixture
capacitance)
Vdd Vout
Vdd
1k
80% Vdd
High Pulse
(TH)
50%
20% Vdd
Period
tftr
Low Pulse
(TL)
90% Vdd, 2.5/2,8/3.3V devices
95% Vdd, 1.8V devices Vdd Pin 4 Voltage
CLK Output
T_start
T_start: Time to start from power-off
NO Glitch first cycle
50% Vdd
Vdd ST Voltage
CLK Output
T_resume
T_resume: Time to resume from ST
50% Vdd
Vdd OE Voltage
CLK Output
T_OE
T_OE: Time to re-enable the clock output
50% Vdd
Vdd OE Voltage
CLK Output
T_OE: Time to put the output drive in High Z mode
HZ
T_OE
The Smart Timing Choice
The Smart Timing Choice
SiT8009
High Frequency, Low Power Oscillator
Rev. 1.0 Page 4 of 11 www.sitime.com
Performance Plots
Figure 7. Idd vs Frequency Figure 8. RMS Period Jitter vs Frequency
Figure 9. RMS Phase Jitter vs Frequency
(12 kHz to 20 MHz Integration Bandwidth)
Figure 10. RMS Phase Jitter vs Frequency
(900 kHz to 20 MHz Integration Bandwidth)
Figure 11. Duty Cycle vs Frequency Figure 12. Rise Time vs Temperature, 125 MHz Output
Note:
7. All plots are measured with 15 pF load at room temperature, unless otherwise stated.
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
115 117 119 121 123 125 127 129 131 133 135 137
1.8 V 2.5 V 2.8 3.0 V 3.3 V
Idd (mA)
Frequency (MHz)
Frequency (MHz)
RMS Period Jitter (ps)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
115 117 119 121 123 125 127 129 131 133 135 137
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
Frequency (MHz)
IPJ (ps)
1.0
1.2
1.4
1.6
1.8
2.0
115 117 119 121 123 125 127 129 131 133 135 137
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
0.4
0.5
0.6
0.7
0.8
0.9
115 117 119 121 123 125 127 129 131 133 135 137
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
Frequency (MHz)
IPJ (ps)
Frequency (MHz)
Duty Cycle (%)
45
46
47
48
49
50
51
52
53
54
55
115 117 119 121 123 125 127 129 131 133 135 137
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
Temperature (°C)
Rise Time (ns)
0.0
0.5
1.0
1.5
2.0
2.5
-40-30-20-10 0 1020304050607080
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
The Smart Timing Choice
The Smart Timing Choice
SiT8009
High Frequency, Low Power Oscillator
Rev. 1.0 Page 5 of 11 www.sitime.com
Programmable Drive Strength
The SiT8009 includes a programmable drive strength feature
to provide a simple, flexible tool to optimize the clock rise/fall
time for specific applications. Benefits from the programmable
drive strength feature are:
• Improves system radiated electromagnetic interference
(EMI) by slowing down the clock rise/fall time
• Improves the downstream clock receiver’s (RX) jitter by de-
creasing (speeding up) the clock rise/fall time.
• Ability to drive large capacitive loads while maintaining full
swing with sharp edge rates.
For more detailed information about rise/fall time control and
drive strength selection, see the SiTime Applications Note
section; http://www.sitime.com/support/application-notes.
EMI Reduction by Slowing Rise/Fall Time
Figure 13 shows the harmonic power reduction as the rise/fall
times are increased (slowed down). The rise/fall times are
expressed as a ratio of the clock period. For the ratio of 0.05,
the signal is very close to a square wave. For the ratio of 0.45,
the rise/fall times are very close to near-triangular waveform.
These results, for example, show that the 11th clock harmonic
can be reduced by 35 dB if the rise/fall edge is increased from
5% of the period to 45% of the period.
Figure 13. Harmonic EMI reduction as a Function of
Slower Rise/Fall Time
Jitter Reduction with Faster Rise/Fall Time
Power supply noise can be a source of jitter for the
downstream chipset. One way to reduce this jitter is to
increase rise/fall time (edge rate) of the input clock. Some
chipsets would require faster rise/fall time in order to reduce
their sensitivity to this type of jitter. The SiT8009 provides up
to 3 additional high drive strength settings for very fast rise/fall
time. Refer to the Rise/Fall Time Tables to determine the
proper drive strength.
High Output Load Capability
The rise/fall time of the input clock varies as a function of the
actual capacitive load the clock drives. At any given drive
strength, the rise/fall time becomes slower as the output load
increases. As an example, for a 3.3V SiT8009 device with
default drive strength setting, the typical rise/fall time is 1ns for
15 pF output load. The typical rise/fall time slows down to
1.8ns when the output load increases to 30 pF. One can
choose to speed up the rise/fall time to 1.38ns by then
increasing the drive strength setting on the SiT8009.
The SiT8009 can support up to 30 pF or higher in maximum
capacitive loads with up to 3 additional drive strength settings.
Refer to the Rise/Tall Time Tables to determine the proper
drive strength for the desired combination of output load vs.
rise/fall time
SiT8009 Drive Strength Selection
Tables 1 through 5 define the rise/fall time for a given capac-
itive load and supply voltage.
1. Select the table that matches the SiT8009 nominal supply
voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).
2. Select the capacitive load column that matches the appli-
cation requirement (5 pF to 30 pF)
3. Under the capacitive load column, select the desired
rise/fall times.
4. The left-most column represents the part number code for
the corresponding drive strength.
5. Add the drive strength code to the part number for ordering
purposes.
Calculating Maximum Frequency
Based on the rise and fall time data given in Tables 1 through
4, the maximum frequency the oscillator can operate with
guaranteed full swing of the output voltage over temperature
as follows:
Example 1
Calculate fMAX for the following condition:
• Vdd = 1.8V (Table 1)
• Capacitive Load: 30 pF
• Desired Tr/f time = 3 ns (rise/fall time part number code = E)
Part number for the above example:
SiT8009AIE12-18E-125.000000T
Drive strength code is inserted here. Default setting is “-”
=1
6 x (Trise)
Max Frequency
The Smart Timing Choice
The Smart Timing Choice
SiT8009
High Frequency, Low Power Oscillator
Rev. 1.0 Page 6 of 11 www.sitime.com
Note:
8. “n/a” indicates that the resulting rise/fall time from the respective combination of the drive strength and output load does not provide rail-to-rail swing and is not
available.
Rise/Fall Time (20% to 80%) vs CLOAD Tables
Table 1. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Table 2. Vdd = 2.5V Rise/Fall Times for Specific CLOAD
Table 3. Vdd = 2.8V Rise/Fall Times for Specific CLOAD Table 4. Vdd = 3.0V Rise/Fall Times for Specific CLOAD
Table 5. Vdd = 3.3V Rise/Fall Times for Specific CLOAD
Drive Strength \ C
LOAD5 pF 15 pF
T0.93 n/a
E0.78 n/a
U0.70 1. 48
F or "-": default 0.65 1. 30
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF
R 1.45 n/a
B1.09 n/a
T0.62 1.28
E or "-": default 0.54 1.00
U0.43 0.96
F 0.34 0.88
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF
R 1.29 n/a n/a
B0.97 n/a n/a
T0.55 1.12 n/a
E or "-": default 0.44 1.00 n/a
U0.34 0.88 n/a
F0.29 0.81 1.48
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF
R 1.22 n/a n/a
B0.89 n/a n/a
T or "-": default 0.51 1.00 n/a
E0.38 0.92 n/a
U0.30 0.83 n/a
F0.27 0.76 1.39
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF
R 1.16 n/a n/a
B0.81 n/a n/a
T or "-": default 0.46 1.00 n/a
E0.33 0.87 n/a
U0.28 0.79 1.46
F0.25 0.72 1.31
Rise/Fall Time Typ (ns)
The Smart Timing Choice
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SiT8009
High Frequency, Low Power Oscillator
Rev. 1.0 Page 7 of 11 www.sitime.com
Instant Samples with Time Machine and
Field Programmable Oscillators
SiTime supports a field programmable version of the SiT8009
low power oscillator for fast prototyping and real time custom-
ization of features. The field programmable devices (FP
devices) are available for all five standard SiT8009 package
sizes and can be configured to one’s exact specification using
the Time Machine II, an USB powered MEMS oscillator
programmer.
Customizable Features of the SiT8009 FP Devices Include
• Any frequency between 115 – 137 MHz
• Three frequency stability options, ±20 PPM, ±25 PPM, ±50
PPM
• Two operating temperatures, -20 to 70°C or -40 to 85°C
• Five supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V
and 2.25 to 3.65V continuous
• Output drive strength
For more information regarding SiTime’s field programmable
solutions, visit http://www.sitime.com/time-machine and
http://www.sitime.com/fp-devices.
SiT8009 is typically factory-programmed per customer
ordering codes for volume delivery.
The Smart Timing Choice
The Smart Timing Choice
SiT8009
High Frequency, Low Power Oscillator
Rev. 1.0 Page 8 of 11 www.sitime.com
Notes:
9. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
10. A capacitor of value 0.1 µF between Vdd and GND is recommended.
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[9] Recommended Land Pattern (Unit: mm)[10]
2.0 x 1.6 x 0.75 mm
2.5 x 2.0 x 0.75 mm
3.2 x 2.5 x 0.75 mm
5.0 x 3.2 x 0.75 mm
YXXXX
#3
#4
#2#1
2.0±0.05
1.6±0.05
0.65
#3 #4
#2 #1
0.68
0.93
0.75±0.05
0.48
1.5
0.8
1.2
0.9
2.5 ± 0.05
2.0 ± 0.05
1.1
1.00
0.75
0.5
0.75 ± 0.05
YXXXX
#1
#2
#4#3
#2
#1
#3#4
2.2
1.9
1.4
1.2
1.9
1.1
1.0
1.5
3.2 ± 0.05
2.5 ± 0.05
2.1
0.9
0.7
0.9
0.75 ± 0.05
#1
#2
#4#3
#2
#1
#3#4
YXXXX
2.2
1.9
1.4
1.2
5.0 ± 0.05
3.2 ± 0.05
2.39
0.8
1.15
1.1
0.75 ± 0.05
#1
#2
#4#3
#2
#1
#3#4
YXXXX
2.54
1.5
1.6
2.2
The Smart Timing Choice
The Smart Timing Choice
SiT8009
High Frequency, Low Power Oscillator
Rev. 1.0 Page 9 of 11 www.sitime.com
Notes:
11. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
12. A capacitor of value 0.1 µF between Vdd and GND is recommended.
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[11] Recommended Land Pattern (Unit: mm)[12]
7.0 x 5.0 x 0.90 mm
5.0 ± 0.05
1.4
1.1
5.08
7.0 ± 0.05
2.6
0.90 ± 0.10
YXXXX
5.08
3.81
2.2
2.0
The Smart Timing Choice
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SiT8009
High Frequency, Low Power Oscillator
Rev. 1.0 Page 10 of 11 www.sitime.com
Ordering Information
Note:
13. For “–”, contact SiTime for availability.
Ordering Codes for Supported Tape & Reel Packing Methods[13]
Device Size 8 mm T&R (3ku) 8 mm T&R (1ku) 12 mm T&R (3ku) 12 mm T&R (1ku) 16 mm T&R (3ku) 16 mm T&R (1ku)
2.0 x 1.6 mmDE––––
2.5 x 2.0 mmDE––––
3.2 x 2.5 mmDE––––
5.0 x 3.2 mm – – T Y – –
7.0 x 5.0 mm––––TY
Frequency
115.000001 MHz to 137 MHz
Part Family
“SiT8009”
Revision Letter
“A” is the revision
Temperature Range
“I” Industrial, -40ºC to 85ºC
Supply Voltage
“18” for 1.8V ±10%
“25” for 2.5V ±10%
“28” for 2.8V ±10%
“33” for 3.3V ±10%
Feature Pin
“E” for Output Enable
“S” for Standby
“C” Commercial, -20ºC to 70ºC
Frequency Stability
“1” for ±20 PPM
“2” for ±25 PPM
Package Size
“1” 2.5 x 2.0 mm
“2” 3.2 x 2.5 mm
“3” 5.0 x 3.2 mm
“8” 7.0 x 5.0 mm
SiT8009AC - 12-18E -1 25.123456T
“3” for ±50 PPM
“7” 2.0 x 1.6 mm
“30” for 3.0V ±10%
“XX” for 2.25V to 3.63V
Packing Method
“T”: 12/16 mm Tape & Reel, 3ku reel
“Y”: 12/16 mm Tape & Reel, 1ku reel
“D”: 8 mm Tape & Reel, 3ku reel
“E”: 8 mm Tape & Reel, 1ku reel
Blank for Bulk
Output Drive Strength
“–” Default (datasheet limits)
See Tables 1 to 5 for rise/fall
times
“R”
“B”
“T”
“E”
“U”
“F”
Rev. 1.0 Page 11 of 11 www.sitime.com
© SiTime Corporation 2013. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES
OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
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prohibited.
The Smart Timing Choice
The Smart Timing Choice
High Frequency, Low Power Oscillator
SiT8009
Additional Information
Document Description Download Link
Time Machine II MEMS oscillator programmer http://www.sitime.com/support/time-machine-oscillator-programmer
Field Programmable
Oscillators
Devices that can be programmable in the field by
Time Machine II
http://www.sitime.com/products/field-programmable-oscillators
Manufacturing Notes Tape & Reel dimension, reflow profile and other
manufacturing related info
http://www.sitime.com/component/docman/doc_download/85-man
ufacturing-notes-for-sitime-oscillators
Qualification Reports RoHS report, reliability reports, composition reports http://www.sitime.com/support/quality-and-reliability
Performance Reports Additional performance data such as phase noise, current
consumption and jitter for selected frequencies
http://www.sitime.com/support/performance-measurement-report
Termination Techniques Termination design recommendations http://www.sitime.com/support/application-notes
Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes
The Smart Timing Choice
The Smart Timing Choice
SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
The Smart Timing Choice
The Smart Timing Choice
SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Silicon MEMS Outperforms Quartz Rev. 1.0 Revised January 16, 2013
Silicon MEMS Outperforms Quartz
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Silicon MEMS Outperforms Quartz
Silicon MEMS Outperforms Quartz Rev. 1.0 www.sitime.com
Best Reliability
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable
products. Figure 1 shows a comparison with quartz
technology.
Why is SiTime Best in Class:
• SiTime’s MEMS resonators are vacuum sealed using an
advanced Epi-Seal™ process, which eliminates foreign
particles and improves long term aging and reliability
• World-class MEMS and CMOS design expertise
Figure 1. Reliability Comparison[1]
Best Aging
Unlike quartz, MEMS oscillators have excellent long term
aging performance which is why every new SiTime product
specifies 10-year aging. A comparison is shown in Figure 2.
Why is SiTime Best in Class:
• SiTime’s MEMS resonators are vacuum sealed using an
advanced Epi-Seal™ process, which eliminates foreign
particles and improves long term aging and reliability
• Inherently better immunity of electrostatically driven
MEMS resonator
Figure 2. Aging Comparison[2]
Best Electro Magnetic Susceptibility (EMS)
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than quartz
oscillators as shown in Figure 3.
Why is SiTime Best in Class:
• Internal differential architecture for best common mode
noise rejection
• Electrostatically driven MEMS resonator is more immune
to EMS
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Power Supply Noise Rejection
SiTime’s MEMS oscillators are more resilient against noise on
the power supply. A comparison is shown in Figure 4.
Why is SiTime Best in Class:
• On-chip regulators and internal differential architecture for
common mode noise rejection
• Best analog CMOS design expertise
Figure 4. Power Supply Noise Rejection[4]
Mean Time Between Failure (Million Hours)
14
16
28
38
500
0200 400 600
Pericom
TXC
Epson
IDT (Fox)
SiTime
SiTime
20X Better
1.5
3.5
3.0
8.0
0
2
4
6
8
10
1-Year 10-Year
SiTime MEMS vs. Quartz Aging
SiTime MEMS Oscillator Quartz Oscillator
Aging (±PPM)
SiTime
2X Better
- 39 - 40 - 42 - 43 - 45
- 73
- 90
- 80
- 70
- 60
- 50
- 40
- 30
Kyocera Epson TXC CW SiLabs SiTime
SiTime vs Quartz
Electro Magnetic Susceptibility (EMS)
Average Spurs (dB)
SiTime
54X Better
0.0
1.0
2.0
3.0
4.0
5.0
10 100 1,000 10,000
Additive Integrated Phase Jitter per mVp-p
Injected Noise (ps/mv)
Power Supply Noise Frequency (kHz)
Power Supply Noise Rejection
SiTIme NDK Epson Kyocera
SiTime
SiTime
3X Better
The Smart Timing Choice
The Smart Timing Choice
Silicon MEMS Outperforms Quartz
Silicon MEMS Outperforms Quartz Rev. 1.0 www.sitime.com
Best Vibration Robustness
High-vibration environments are all around us. All electronics,
from handheld devices to enterprise servers and storage
systems are subject to vibration. Figure 5 shows a comparison
of vibration robustness.
Why is SiTime Best in Class:
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
Figure 5. Vibration Robustness[5]
Best Shock Robustness
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
Why is SiTime Best in Class:
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
Figure 6. Shock Robustness[6]
Vibration Sensitivity (ppb/g)
0.10
1.00
10.00
100.00
10 100 1000
Vibration Frequency (Hz)
Vibration Sensitivity vs. Frequency
SiTime TXC Epson Connor Winfield Kyocera SiLabs
SiTime
Up to 30x
Better
14.3
12.6
3.9
2.9 2.5
0.6
0
2
4
6
8
10
12
14
16
K
y
ocer
a
E
p
son TXC CW SiLab
s
SiTime
Differential XO Shock Robustness - 500 g
SiTime
Up to 25x
Better
Peak Frequency Deviation (PPM)
Notes:
1. Data Source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
• Field strength: 3V/m
• Radiated signal modulation: AM 1 kHz at 80% depth
• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
• Antenna polarization: Vertical
• DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
5. Devices used in this test: same as EMS test stated in Note 3.
6. Test conditions for shock test:
• MIL-STD-883F Method 2002
• Condition A: half sine wave shock pulse, 500-g, 1ms
• Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test: same as EMS test stated in Note 3
7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com.
The Smart Timing Choice
The Smart Timing Choice
Document Feedback Form
Feedback Form Rev. 1.0 www.sitime.com
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