©2005 Fairchild Semiconductor Corporation
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FQA8N100C Rev. A
FQA8N100C 1000V N-Channel MOSFET
September 2005
QFET ®
FQA8N100C
1000V N-Channel MOSFET
Features
• 8A, 1000V, R
DS(on)
= 1.45Ω @V
GS
= 10 V
• Low gate charge (typical 53 nC)
• Low C
rss
(typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies.
Absolute Maximum Ratings
Thermal Charac t eristi cs
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S
D
G
GSD
TO-3PN
FQA Series
Symbol Parameter FQA8N100C Unit
V
DSS
Drain-Source Voltage 1000 V
I
D
Drain Current - Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
8
5
A
A
I
DM
Drain Current - Pulsed
(Note 1)
32 A
V
GSS
Gate-Source voltage ±30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
850 mJ
I
AR
Avalanche Current
(Note 1)
8A
E
AR
Repetitive Avalanche Energy
(Note 1)
22.5 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
225
1.79
W
W/°C
T
J,
T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300 °C
Symbol Parameter Min. Max. Unit
R
θJC
Thermal Resistance, Junction-to-Case -- 0.56 °C/W
R
θCS
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
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FQA8N100C Rev. A
FQA8N100C 1000V N-Channel MOSFET
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤ 8A, di/dt ≤ 200A/µs, V
DD
≤ BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FQA8N100C FQA8N100C TO-3PN-- -- 30
Symbol Parameter Conditions Min. Typ. Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250µA 1000 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient I
D
= 250µA, Referenced to 25°C--1.4--V/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 1000V, V
GS
= 0V
V
DS
= 800V, T
C
= 125°C
--
--
--
--
10
100
µA
µA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30V, V
DS
= 0V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30V, V
DS
= 0V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA3.0--5.0V
R
DS(on)
Static Drain-Source
On-Resistance V
GS
= 10V, I
D
= 4A -- 1.2 1.45 Ω
g
FS
Forward Transconductance V
DS
= 50V, I
D
= 4A
(Note 4)
-- 8.0 -- S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
-- 2475 3220 pF
C
oss
Output Capacitance -- 195 255 pF
C
rss
Reverse Transfer Capacitance -- 16 24 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
DD
= 500V, I
D
= 8A
R
G
= 25Ω
(Note 4, 5)
-- 50 110 ns
t
r
Turn-On Rise Time -- 95 200 ns
t
d(off)
Turn-Off Delay Time -- 122 254 ns
t
f
Turn-Off Fall Time -- 80 170 ns
Q
g
Total Gate Charge V
DS
= 800V, I
D
= 8A
V
GS
= 10V
(Note 4, 5)
-- 53 70 nC
Q
gs
Gate-Source Charge -- 13 -- nC
Q
gd
Gate-Drain Charge -- 23 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 8 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0V, I
S
= 8A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0V, I
S
= 8A
dI
F
/dt =100A/µs
(Note 4)
-- 620 -- ns
Q
rr
Reverse Recovery Charge -- 5.2 -- µC
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FQA8N100C Rev. A
FQA8N100C 1000V N-Channel MOSFET
Typical Perfo rmance Chara cteri stic s
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
※
1. 250µ s Pulse Test
2. T
C
= 25
℃
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
246810
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
※
1. V
DS
= 50V
2. 250µ s Pulse Test
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
0 5 10 15 20 25
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 20V
V
GS
= 10V
Note : T
※
J
= 25
℃
R
DS(ON)
[Ω],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
-1
10
0
10
1
150
℃
Notes :
※
1. V
GS
= 0V
2. 250µ s Pulse Test
25
℃
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
3500
4000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
※
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
0 10203040506070
0
2
4
6
8
10
12
V
DS
= 500V
V
DS
= 200V
V
DS
= 800V
Note : I
※
D
= 8A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
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FQA8N100C Rev. A
FQA8N100C 1000V N-Channel MOSFET
Typical Perfo rmance Chara cteri stic s
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperatu re
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
※
1. V
GS
= 0 V
2. I
D
= 250 µ A
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
※
1. V
GS
= 10 V
2. I
D
= 4 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
µ
s
DC
10 ms
1 ms
100
µ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
※
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Si ngl e Pul se
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
2
4
6
8
ID, Drain Current [A]
TC
, Case Temperature [ ]
℃
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
Notes :
※
1 . Z
θJC
(t) = 0.56 /W M ax.
℃
2 . D uty F acto r, D =t
1
/t
2
3 . T
JM
- T
C
= P
DM
* Z
θJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θJC
(t), Thermal Response
t
1
, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
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FQA8N100C Rev. A
FQA8N100C 1000V N-Channel MOSFET
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=LI
AS2
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
L
I
D
t
p
E
AS
=LI
AS2
----
2
1
E
AS
=LI
AS2
----
2
1
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
LL
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switch ing Test Circuit & Waveforms
Unclamped Inductive Switching Tes t Circuit & Waveforms
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FQA8N100C Rev. A
FQA8N100C 1000V N-Channel MOSFET
Peak Diode Recover y dv/dt Test Circui t & Waveforms
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
LL
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
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FQA8N100C Rev. A
FQA8N100C 1000V N-Channel MOSFET
Mechanical Dimensions
Dimensions in Millimeters
TO-3PN
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
FQA8N100C 1000V N-Channel MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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FQA8N100C Rev. A
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