intersil HGTG20N60C3D Data Sheet January 2000 File Number 4494.2 45A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input * Typical Fall Time................ 108ns at Ty = 150C impedance of a MOSFET and the low on-state conduction * Short Circuit Rating loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. The IGBT used is development type TA49178. The diode used in * Hyperfast Anti-Parallel Diode anti-parallel with the IGBT is the RHRP3060 (TA49063). * 45A, 600V, Tc = 25C * 600V Switching SOA Capability Low Conduction Loss a ; webs Packaging The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. JEDEC STYLE TO-247 Formerly developmental type TA49179. Ordering Information PART NUMBER PACKAGE BRAND HGTG20N60C3D TO-247 G20N60C3D NOTE: When ordering, use the entire part number. Symbol INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 4-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 2000HGTG20N60C3D Absolute Maximum Ratings T = 25C, Unless Otherwise Specitied HGTG20N60C3D UNITS Collector to Emitter Voliage 0.2... eee BVcEsS 600 Vv Collector Current Continuous ALT = 25C one ened nnn lca5 45 A AtTC = 110C nnn eee een nena lc110 20 A Collector Current Pulsed (Note 1)... 0... eee lom 300 A Gate to Emitter Voltage Continuous... 2... eee VGES +20 Vv Gate to Emitter Voltage Pulsed ....... 0... 00s VGEM +30 Vv Switching Safe Operating Area at Ty = 150C (Figure 2) ...................008. SSOA 20A at 600V Power Dissipation Total at To = 25C 20 n eee ee Pp 164 WwW Power Dissipation Derating To > 25C 00 eect n nes 1.32 w/c Operating and Storage Junction Temperature Range.....................00. Ty, Tsta -55 to 150 C Maximum Lead Temperature for Soldering ... 2... .. 0.0.00. eee TL 260 C Short Circuit Withstand Time (Note 2) at Vqp=12V......0000000 0000 eee tsc 4 ps Short Circuit Withstand Time (Note 2) at Vqe = 10V......0000000 00000. eee tsc 10 ps CAUTION: Siresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VoE(Pk) = 360V, Ty = 125C, Rg = 102. Electrical Specifications T,> = 25C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVcES Io = 250A, Vor = OV 600 - - v Collector to Emitter Leakage Current IcES Vce = BYces To = 25C - - 250 pA To = 150C - - 5.0 mA Collector to Emitter Saturation Voltage VCE(SAT) lo =Ic110 To = 25C - 1.4 1.8 VoeE = 15V 0 Te = 150C - 1.5 1.9 Gate to Emitter Threshold Voltage VGE(TH) Ic = 250A, VceE = Vee 3.4 48 6.3 Gate to Emitter Leakage Current IGEs Vag = +20V - - +250 nA Switching SOA SSOA Ty=150C,Ra= | VcE=480V 120 - - 10, Vee = 15V, L=100nH Voge = 600V 20 - - Gate to Emitter Plateau Voltage VGEP Ice = Ic110: Voce =9.5 BVcES - 8.4 - Vv On-State Gate Charge Qaon) Ice =Ilc110 Vag = 15V - 91 110 nC Vog = 0.5 BV, CE CES | Vp = 20V - 122 145 nc Current Turn-On Delay Time ta(ON)| IGBT and Diode at Ty = 25C - 28 32 ns a IcE='c110 Current Rise Time tr Vor = 0.8 BVcES - 24 28 ns Current Turn-Off Delay Time td(OFF)| VaeE = 15V - 151 210 ns Rg = 102 Current Fall Time te L=1mH - 55 98 ns Turn-On Energy EON Test Circuit (Figure 19) . 500 550 uJ Turn-Off Energy (Note 3) Eorr - 500 700 pd 2 intersilHGTG20N60C3D Electrical Specifications = T. = 25C, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Current Turn-On Delay Time ta(ON)| IGBT and Diode at Ty = 150C - 28 32 ns Current Rise Time tr aa BVces - 24 28 ns Current Turn-Off Delay Time td(OFF)| VaeE = 15V - 280 450 ns Re = 10 Current Fall Time te L=1mH - 108 210 ns Turn-On Energy Eon Test Circuit (Figure 19) - 1.0 1.1 mJ Turn-Off Energy (Note 3) Eorr - 1.2 1.7 mJ Diode Forward Voltage VeEc lec = 20A - 1.5 1.9 Vv Diode Reverse Recovery Time ter lec = 20A, dlec/dt = 200A/us - - 55 ns lec = 2A, diec/dt = 200A/us - 32 47 ns Thermal Resistance Junction To Case Rec IGBT - - 0.76 oCW Diode - - 1.2 Cw NOTES: 3. Turn-Off Energy Loss (Egfr) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (Ice = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Typical Performance CurveS unless Otherwise Specified T T Ty = 150C, Rg = 100, Vg e= 15V,L T = 100yH \ 50 <= Vor = 15V mS < ~ Wu 120 5 40 tr Ww 2 t 22 100 3 MN wi 30 E oe N E 80 B Nw fi ar) 2 6 _ ae 9 N NN 5 40 a 10 4 TI J & 9 20 0 Ww 25 50 75 100 125 150 2 9) 1 Tc, CASE TEMPERATURE (C) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 00 200 300 400 500 600 700 Voge, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA intersilHGTG20N60C3D Typical Performance Curves unless Otherwise Specified (Continued) z - a Ty = 150C, Rg = 100, es _ = 100 SS) aL = MH, Voce = 480V > rE ' rad _ + im + 75C 15V ZS , a r 75C ov GH _ N W + 110C 15V oe > ei 1 110C 10v RQ NX 9 40 | | = Cc , he E E fmax1 = 9.05 / (tq(orFy + ta(ony)) SN ~ i L fmax2 = (Pp - Pc) / (Eon + Eorr) XN Oo L Pg = CONDUCTION DISSIPATION \ x L (DUTY FACTOR = 50%) \ = Rguc = 0.76CW, SEE NOTES 1 1 1 1 1 1 1 4 2 5 10 20 40 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 100 [DUTY CYCLE <0.5%, Vag = 10V PULSE DURATION = 80 Tc = -55C To= 25C 60 Tc = 150C 40 20 Ice, COLLECTOR TO EMITTER CURRENT (A) o 2 4 6 8 10 Voce, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE Rg = 102, L = 1mH, Voce = 480V Ty = 150C, Veg = 10V Eon, TURN-ON ENERGY LOSS (mJ) Ty = 25C, Ty = 150C, Veg = 15V 5 10 15 20 25 30 35 40 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 14 T T T VcE = 360V, Rg = 102, Ty = 125C 450 12 \ Isc 400 /~ 7). 350 300 250 4 1: Si sc 200 Isc, PEAK SHORT CIRCUIT CURRENT (A) tsc, SHORT CIRCUIT WITHSTAND TIME (us) o 10 11 12 13 14 Voge; GATE TO EMITTER VOLTAGE (V) 150 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 300 DUTY CYCLE <0.5%, Vgg = 15V 250 | PULSE DURATION = 250us 200 iW AZ i rows | i Ice, COLLECTOR TO EMITTER CURRENT (A) 150 7 ~~ To= a ca 100 Tce = 150C 4 a 50 a 0 0 1 2 3 4 5 6 Voce, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3.0 T T T Rg = 109, L=1mH, Voce = 480V J 2.5 ~~ 2.0 Ty = 150C; VGE = 10V OR 15V 1.5 A Lo a 1.0 LZ LT _ | | Eorr,; TURN-OFF ENERGY LOSS (mJ) 0.5 7, 25C; Vgg = 10V OR 15V + 5 10 15 20 25 30 35 40 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 intersilHGTG20N60C3D Typical Performance Curves unless Otherwise Specified (Continued) Rg = 109, L = 1mH, Voce = 480V Ty = 25C, Ty = 150C, Vge = 10V tg], TURN-ON DELAY TIME (ns) Ty = 25C, Ty = 150C, Veg = 15V 5 10 15 20 25 30 35 40 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 300 Rg = 100, L = 1mH, Veg = 480V 275 250 225 Ty = 150C, Vee = 10V, Veg = 15V 200 Ty = 25C, Vee = 10V, Vee = 15V 175 150 125 ta(OFF)l> TURN-OFF DELAY TIME (ns) 100 5 10 15 20 25 30 35 40 IcE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT = 300 : 7 : : 7 E DUTY CYCLE <0.5%, Vog = 10V a a PULSE DURATION = 250us a 250 t 3 Te = -55C te E 200 { i 150 Tc = 150C ao 100 e ty To = 25C ! 50 Q 8 0 5 6 7 8 9 10 #11 12 #13 14 = 15 Voce; GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC 200 Rg = 100, L = 1mH, Vog = 480V 175 150 Ty = 25C, Ty = 150C, Vgg = 10V 125 100 75 ty, RISE TIME (ns) 50 25 Ty = 25C and Ty = 150C, Vge = 15V i) 5 10 15 20 25 30 35 40 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 120 Rg = 100, L = 1mH, Voce = 480V 110 100 Ty = 150C, Vge = 10V OR Vge = 15V 90 80 70 tj, FALL TIME (ns) Ty = 25C, Vge = 10V OR 15V 60 50 40 5 10 15 20 25 30 35 40 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT Ig (REF) = 1mA, Ri = 159, To = 25C VoE = Vcr = 200V. Vog = 400V Vge; GATE TO EMITTER VOLTAGE (V) 0 10 20 30 40 50 60 #70 80 90 100 Qg: GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS 5 intersilHGTG20N60C3D Typical Performance Curves Zeguc; NORMALIZED THERMAL RESPONSE 100 90 80 70 60 50 40 30 20 lec, FORWARD CURRENT (A) 10 10 1071 1072 0.5 0.2 0.1 0.05 0.02 0.01 Unless Otherwise Specified (Continued) \ Ges FREQUENCY = 1MHz c & o Q 3 = 2 a 2 < c Oo OES oO 1 = ee 0 a 0 5 10 15 20 25 Voge, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE SINGLE PULSE 0.5 104 10 DUTY FACTOR, D = ty / ty PEAK Ty = (Pp X Zoic X Roc) + Te 102 1071 40 io! ty, RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Tc = 150C 1.0 1.5 2.0 2.5 3.0 Vec; FORWARD VOLTAGE (V) FIGURE 17. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP To = 25C, diec/dt = 200A/us ty, RECOVERY TIMES (ns) 0 5 10 15 20 25 lec, FORWARD CURRENT (A) FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT 30 6 intersilHGTG20N60C3D Test Circuit and Waveforms HGTG20N60C3D L=1mH = Vpp = 480V FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handlers body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VgeM. Exceeding the rated Vee can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. VGE VcE 90% 10% ta(OFF)I ' ta fl ta(on)I FIGURE 20. SWITCHING TEST WAVEFORMS Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (Ice) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8,9 and 11. The operating frequency plot (Figure 3) of a typical device shows fryayx7 OF fyaxe; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fmax1 is defined by fyax1 = 0.05/(tg(OFF)I+ ta(ON)I)- Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. ty(QFFy| and tyon)y| are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than Ty\y. ta(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAxe is defined by fyyaxe = (Pp - Pc)/(Eorr + Eon). The allowable dissipation (Pp) is defined by Pp = (Ty - Tc)/ReJc. The sum of device switching and conduction losses must not exceed Pp. A 50% duty factor was used (Figure 3) and the conduction losses (Pc) are approximated by Po = (VcE X Ice)/2. Eon and Eorr are defined in the switching waveforms shown in Figure 20. Eon is the integral of the instantaneous power loss (Ice x Vce) during turn-on and Eorr is the integral of the instantaneous power loss (Ice x Veg) during turn-off. All tail losses are included in the calculation for Eorr; i-e., the collector current equals zero (Icg = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 intersil ECCOSORBD" is a Trademark of Emerson and Cumming, Inc.