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Is Now Part of
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSA1156
PNP Silicon Transis tor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage - 400 V
VCEO Collector-Emitter Voltage - 400 V
VEBO Emitter-Base Voltage - 7 V
IBBase Current - 0.25 A
ICCollector Current (DC) - 0.5 A
ICP Collector Current (Pulse) - 1 A
PCCollector Dissipation (Ta=25°C) 1 W
PCCollector Dissipation (TC=25°C) 10 W
TJJunction Tem perature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Vo ltage IC = - 100mA, IB = - 10mA
L = - 20mH - 400 V
VCEX(sus) Collector-Emitter Sustaining Vo ltage
IC = - 200mA, IB1 = - IB2 = - 20mA
VBE(off)= 5V, L = 10mH - 400 V
ICBO Collector Cut-off Current VCB = - 400V, IE = 0 - 100 µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 10 µA
ICEX1 Collector Cut-off Current VCE = - 400V, VBE(off) = 1.5V - 100 µA
ICEX2 Collector Cut-off Current VCE = - 400V, VBE(off) = 1.5V
TC= 125°C- 1 mA
hFE DC Current Gain VCE = - 5V, IC = - 100mA 30 200
VCE(sat) Collector-Emitter Satu ration Voltage IC = - 100mA, IB = - 10mA - 1 V
VBE(sat) Base-Emitter Saturation Voltage IC = - 100mA, IB = - 10mA - 1.2 V
tON Turn On Time VCC = - 150V, IC = - 100mA
IB1= - 10mA , IB2 = 20mA
RL = 1.5K
1µs
tSTG Storage Time 4µs
tFFall Time 1µs
Classification N R O Y
hFE 30 ~ 60 40 ~ 80 60 ~ 120 100 ~ 200
KSA1156
High Voltage Switching
Low Power Swit ching Regulator
DC-DC Converte r
High Breakdown Voltage
Low Collector Saturation Voltage
High Speed Switching 1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
KSA1156
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC
current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Figure 4. Safe Operating Area
Figure 5. Reverse Bias Safe Operating Area Figure 6. Derating Curve of Safe Operating Areas
-0 -2 -4 -6 -8 -10
-0.0
-0.1
-0.2
-0.3
-0.4
-0.5
IB = -200mA
IB = -180mA
IB = -80mA
IB = -120mA
IB = -160mA
IB = -60mA
IB = -100mA
IB = -140mA
IB = -40mA
IB = -20mA
IC[A], COLLECTOR CURRENT
VCE[V], C OLLECTOR-EMI T TER VOLT AGE
-0.1 -1 -10 -100 -1000
1
10
100
1000
VCE = -5V
Puls e T est
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sa t)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000
-1E-3
-0.01
-0.1
-1
-10
S/b LIMIT ED
10
1ms
DISSIPATION
LIMITED
DC
VCEOMAX.
100
IC MAX. (Pulse)
IC[A], COLLECTOR CURRENT
VCE[V], COLLE CT OR -E MITTER VOLTAGE
-0 -100 -200 -300 -400 -500
-0
-50
-100
-150
-200
-250
IC(mA), COLLECTOR CURRENT
VCE(v), COLLECTOR EMITTER VOLTA GE
0 50 100 150 200
0
20
40
60
80
100
120
140
160
Dissipation Limited
S/b Limited
dT(%),IcDERATING
TC[oC], CASE TEMPERATURE
©2000 Fairchild Semiconductor International
KSA1156
Rev. A, February 2000
Typical character istics (Continued)
Figure 7. Power Derating
0 50 100 150 200
0
2
4
6
8
10
12
14
16
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
2.29
1.35
1.70
1.50
0.85
0.65
3X
14.20 MAX
D
3.20
8.30
7.70
4.00
3.80
#1
0.60
0.45
3X
E
1.00
1.95
1.55
3.45
3.05
11.20
10.80
TOP VIEW
FRONT VIEW
SIDE VIEW
NOTES:
A. NO INDUSTRY STANDARD APPLIES TO THIS
PACKAGE
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR PROTRUSIONS
D
FOR TERMINAL LENGTH "D", REFER TO TABLE
E
FOR TERMINAL LENGTH "E", REFER TO TABLE
F. DRAWING FILENAME: MKT-TO126AArev2
0.254
M
PRODUCTION
CODE
TERMINAL
LENGTH "D"
TERMINAL
LENGTH "E"
TSSTU
3.45 - 4.05
6.45-7.45
TSTU
2.36 - 2.96
5.36-6.36
NONE
(STD LENGTH)
12.76 - 13.36
15.76-16.76
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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