PD - 96163A IRLML2502GPbF l l l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free Halogen-Free HEXFET(R) Power MOSFET G 1 VDSS = 20V 3 D S RDS(on) = 0.045 2 Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. Micro3TM A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units 20 4.2 3.4 33 1.25 0.8 0.01 12 -55 to + 150 V A W W/C V C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Typ. Max. Units 75 100 C/W 1 09/25/12 IRLML2502GPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage Parameter 20 --- --- V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.01 --- RDS(on) Static Drain-to-Source On-Resistance --- 0.035 0.045 --- 0.050 0.080 Conditions VGS = 0V, ID = 250uA V/C Reference to 25C, ID = 1.0mA VGS = 4.5V, ID = 4.2A VGS = 2.5V, ID = 3.6A VGS(th) Gate Threshold Voltage 0.60 --- 1.2 V VGS(th) Gate Threshold Voltage Coefficient --- -3.2 --- mV/C S VDS = VGS, ID = 250A gfs Forward Transconductance 5.8 --- --- IDSS Drain-to-Source Leakage Current --- --- 1.0 --- --- 25 Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 Qg Total Gate Charge --- 8.0 12 Q gs Gate-to-Source Charge --- 1.8 2.7 Q gd Gate-to-Drain ("Miller") Charge --- 1.7 2.6 VGS = 5.0V td(on) Turn-On Delay Time --- 7.5 --- VDD = 10V tr Rise Time --- 10 --- td(off) Turn-Off Delay Time --- 54 --- tf Fall Time --- 26 --- RD = 10 Ciss Input Capacitance --- 740 --- VGS = 0V Coss Output Capacitance --- 90 --- Crss Reverse Transfer Capacitance --- 66 --- Min. Typ. Max. IGSS A nA d d VDS = 10V, ID = 4.0A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 70C VGS = 12V VGS = -12V ID = 4.0A nC ns pF VDS = 10V d ID = 1.0A RG = 6 d VDS = 15V = 1.0MHz Source-Drain Rating and Characteristics Parameter IS Continuous Source Current (Body Diode) Pulsed Source Current ISM (Body Diode) c --- --- Units 1.3 A --- --- Conditions MOSFET symbol 33 D showing the integral reverse G p-n junction diode. VSD Diode Forward Voltage --- --- 1.2 V TJ = 25C, IS = 1.3A, VGS = 0V trr Reverse Recovery Time --- 16 24 ns TJ = 25C, IF = 1.3A Q rr Reverse Recovery Charge --- 8.6 13 nC di/dt = 100A/s d S d Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Surface mounted on FR-4 board, t 5sec. Pulse width 300s; duty cycle 2%. 2 www.irf.com IRLML2502GPbF 100 100 VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 2.25V 10 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 2.25V 10 1 0.1 100 VDS , Drain-to-Source Voltage (V) 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C V DS = 15V 20s PULSE WIDTH 2.4 2.8 3.2 3.6 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 VGS , Gate-to-Source Voltage (V) 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 2.0 20s PULSE WIDTH TJ = 150 C 4.0 ID = 4.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLML2502GPbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1000 800 Ciss 600 400 200 0 Coss Crss 1 10 10 VGS , Gate-to-Source Voltage (V) 1200 VDS = 10V 8 6 4 2 0 100 ID = 4.0A 0 4 8 12 16 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 I D , Drain Current (A) 100 TJ = 150 C 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.4 10us 10 100us 1ms 1 10ms TA = 25 C TJ = 150 C Single Pulse 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLML2502GPbF ID , Drain Current (A) 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 TC , Case Temperature ( C) 150 Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 RDS(on) , Drain-to -Source Voltage ( ) 0.05 0.04 Id = 4.0A 0.03 0.02 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 RDS ( on ) , Drain-to-Source On Resistance ( ) IRLML2502GPbF 0.30 VGS = 2.5V 0.20 0.10 VGS = 4.5V 0.00 0 VGS, Gate -to -Source Voltage ( V ) 10 20 30 40 iD , Drain Current ( A ) Fig 11. On-Resistance Vs. Gate Voltage Fig 12. On-Resistance Vs. Drain Current VGS(th), Gate threshold Voltage (V) 1.3 1.1 0.9 0.7 ID = 50A ID = 250A 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C ) Fig 13. Threshold Voltage Vs. Temperature 6 www.irf.com IRLML2502GPbF Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) DIMENSIONS A 6 5 SYMBOL D A A1 A2 b c D E E1 e e1 L L1 L2 A A2 3 6 C E E1 1 2 0.15 [0.006] M C B A 0.10 [0.004] C A1 5 B 3X b e 0.20 [0.008] M C B A NOTES: e1 H 4 L1 Recommended Footprint c L2 0.972 0.950 0.802 3X L 7 1.900 MILLIMETERS INCHES MIN MAX MIN 0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0 1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8 MAX 0.0004 %6& %6& REF BSC 0 8 2.742 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. Micro3 (SOT-23/TO-236AB) Part Marking Information Notes: T his part marking information applies to devices produced after 02/26/2001 W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR DAT E CODE PART NUMBER Cu WIRE HALOGEN FREE LEAD FREE LOT CODE X = PART NUMBER CODE REFERENCE: A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0100 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML9301 R = IRLML9303 YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A LET T ER YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 X Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRLML2502GPbF Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/2012 8 www.irf.com